On the public citation graph

Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy

https://doi.org/10.1063/1.359576
0 signed · 52 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssa.2210120117openalex-snapshot
Luminescence and photoconductivity of undoped p-GaSb
inferredcites →https://doi.org/10.1002/pssb.2220730124openalex-snapshot
Optical Studies of Free and Bound Excitonic States in GaSb Evidence for Deep A+‐Complexes
inferredcites →https://doi.org/10.1007/bf02667791openalex-snapshot
Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
inferredcites →https://doi.org/10.1016/0022-0248(83)90192-6openalex-snapshot
Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions
inferredcites →https://doi.org/10.1016/0022-3697(67)90193-xopenalex-snapshot
Growth properties of GaSb: The structure of the residual acceptor centres
inferredcites →https://doi.org/10.1063/1.102842openalex-snapshot
High-purity GaSb epitaxial layers grown from Sb-rich solutions
inferredcites →https://doi.org/10.1063/1.1660142openalex-snapshot
Electroluminescence in Liquid-Phase Epitaxial GaSb Diodes
inferredcites →https://doi.org/10.1063/1.337615openalex-snapshot
Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizations
inferredcites →https://doi.org/10.1063/1.351786openalex-snapshot
Growth-temperature dependence of electrical and luminescent properties of high-quality GaSb grown by liquid-phase epitaxy
inferredcites →https://doi.org/10.1063/1.352216openalex-snapshot
Photoluminescence of high-quality GaSb grown from Ga- and Sb-rich solutions by liquid-phase epitaxy
inferredcites →https://doi.org/10.1063/1.90064openalex-snapshot
Arsenic and gallium distribution coefficients in liquid-phase epitaxial GaxIn1−xPyAs1−y
inferredcites →https://doi.org/10.1063/1.91649openalex-snapshot
Backside-illuminated InAsSb/GaSb broadband detectors
inferredcites →https://doi.org/10.1063/1.95346openalex-snapshot
Is the intrinsic conductivity of AlGaSb grown at low temperatures n or p type?
inferredcites →https://doi.org/10.1063/1.96517openalex-snapshot
GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1088/0022-3727/13/4/020openalex-snapshot
Photoluminescence from solution-grown AlxGa1-xSb alloys
inferredcites →https://doi.org/10.1103/physrevb.12.2382openalex-snapshot
Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb
inferredcites →https://doi.org/10.1103/physrevb.14.2498openalex-snapshot
Comparison of second-order Raman scattering measurements with a phonon density-of-states calculation in GaSb
inferredcites →https://doi.org/10.1109/68.47041openalex-snapshot
An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode with a gain bandwidth product of 90 GHz
inferredcites →https://doi.org/10.1109/jqe.1981.1071068openalex-snapshot
Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
inferredcites →https://doi.org/10.1109/jqe.1981.1071074openalex-snapshot
The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectors
inferredcites →https://doi.org/10.1143/jjap.19.1695openalex-snapshot
Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
inferredcites →https://doi.org/10.1149/1.2134414openalex-snapshot
Growth and Characterization of Al x Ga1 − x Sb
inferredcites →https://doi.org/10.1149/1.2423384openalex-snapshot
Optical Absorption Edges of ZnO and CdS

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4813220openalex-extracted
Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation
inferred← citeshttps://doi.org/10.1002/(sici)1521-4079(1998)33:3<457::aid-crat457>3.0.co;2-nopenalex-snapshot
AlGaAsSb and AlGaInAsSb Growth from Sb-rich Solutions
inferred← citeshttps://doi.org/10.1002/(sici)1521-4079(1998)33:5<717::aid-crat717>3.0.co;2-popenalex-snapshot
Compositional Effects on Solidification of Congruently Melting InSb
inferred← citeshttps://doi.org/10.1002/pssc.200674103openalex-snapshot
Study of Te diffused into GaSb by photoluminescence and HRXRD
inferred← citeshttps://doi.org/10.1007/10860305_130openalex-snapshot
gallium antimonide (GaSb), shallow impurities and defects
inferred← citeshttps://doi.org/10.1007/s00339-018-1931-8openalex-snapshot
Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system
inferred← citeshttps://doi.org/10.1007/s11664-999-0204-xopenalex-snapshot
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
inferred← citeshttps://doi.org/10.1016/0022-0248(95)00540-4openalex-snapshot
Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium
inferred← citeshttps://doi.org/10.1016/0022-0248(95)00748-2openalex-snapshot
Molecular beam epitaxy of quantum well structures
inferred← citeshttps://doi.org/10.1016/j.mseb.2005.03.010openalex-snapshot
Cathodoluminescence study of ytterbium doped GaSb
inferred← citeshttps://doi.org/10.1016/j.solmat.2010.02.038openalex-snapshot
Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.113580openalex-snapshot
Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals
inferred← citeshttps://doi.org/10.1016/s0022-0248(96)00441-1openalex-snapshot
Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/s0022-0248(96)00758-0openalex-snapshot
High-quality Ga1−xInxAsySb1−y quaternary layers grown from antimonide-rich solutions by liquid-phase epitaxy
inferred← citeshttps://doi.org/10.1016/s0022-0248(97)00170-xopenalex-snapshot
InGaAsSb growth from Sb-rich solutions
inferred← citeshttps://doi.org/10.1039/d2tc03443copenalex-snapshot
Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures
inferred← citeshttps://doi.org/10.1063/1.3082009openalex-snapshot
Temperature and excitation power dependence of photoluminescence from high quality GaSb grown on AlSb and GaSb buffer layers
inferred← citeshttps://doi.org/10.1063/1.360492openalex-snapshot
X-ray photoelectron spectroscopy and optoelectrical properties of low-concentration erbium-doped GaSb layers grown from Sb-rich solutions by liquid-phase epitaxy
inferred← citeshttps://doi.org/10.1063/1.362848openalex-snapshot
Nature of compensating luminescence centers in Te-diffused and -doped GaSb
inferred← citeshttps://doi.org/10.1063/1.362972openalex-snapshot
Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy
inferred← citeshttps://doi.org/10.1063/1.373742openalex-snapshot
Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs
inferred← citeshttps://doi.org/10.1063/1.5043509openalex-snapshot
High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer
inferred← citeshttps://doi.org/10.1088/0268-1242/12/11/013openalex-snapshot
Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi melts
inferred← citeshttps://doi.org/10.1088/0268-1242/19/3/036openalex-snapshot
Luminescence from indented Te-doped GaSb crystals
inferred← citeshttps://doi.org/10.1088/0953-8984/16/2/030openalex-snapshot
Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
inferred← citeshttps://doi.org/10.1088/1674-4926/40/4/042101openalex-snapshot
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
inferred← citeshttps://doi.org/10.1134/s1063782610090241openalex-snapshot
Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells
inferred← citeshttps://doi.org/10.1143/jjap.35.5246openalex-snapshot
Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
inferred← citeshttps://doi.org/10.1143/jjap.36.5623openalex-snapshot
Liquid-Phase Epitaxial Growth of In0.35Ga0.65P on GaP Substrates from Sn-Rich Solutions
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.