On the public citation graph

Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content

https://doi.org/10.1063/1.4978512
0 signed · 153 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0038-1098(89)91046-6openalex-snapshot
Band structure and instability of Ge1−xSnx alloys
inferredcites →https://doi.org/10.1016/0038-1098(93)90294-wopenalex-snapshot
Effect of static uniaxial stress on the Raman spectrum of silicon
inferredcites →https://doi.org/10.1016/c2009-0-20920-2openalex-snapshot
Handbook of Optical Constants of Solids
inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.09.018openalex-snapshot
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.04.018openalex-snapshot
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2015.11.001openalex-snapshot
Si–Ge–Sn alloys: From growth to applications
inferredcites →https://doi.org/10.1016/j.ssc.2007.08.020openalex-snapshot
Raman scattering in Ge1−ySny alloys
inferredcites →https://doi.org/10.1016/j.ssc.2011.01.017openalex-snapshot
The contributions of composition and strain to the phonon shift in alloys
inferredcites →https://doi.org/10.1016/j.tsf.2015.09.040openalex-snapshot
The strain dependence of Ge1−xsnx (x=0.083) Raman shift
inferredcites →https://doi.org/10.1016/j.tsf.2015.11.039openalex-snapshot
Study of the light emission in Ge layers and strained membranes on Si substrates
inferredcites →https://doi.org/10.1021/acs.chemmater.5b01327openalex-snapshot
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
inferredcites →https://doi.org/10.1021/acsami.6b01582openalex-snapshot
Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn
inferredcites →https://doi.org/10.1021/acsphotonics.6b00258openalex-snapshot
Optically Pumped GeSn Microdisk Lasers on Si
inferredcites →https://doi.org/10.1021/acsphotonics.6b00429openalex-snapshot
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
inferredcites →https://doi.org/10.1021/am5075248openalex-snapshot
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
inferredcites →https://doi.org/10.1021/nl4017286openalex-snapshot
Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge 1– x Sn x ): A Novel Route for Ge 1– x Sn x Nanostructure Fabrication
inferredcites →https://doi.org/10.1021/nl404152ropenalex-snapshot
Power-Dependent Raman Analysis of Highly Strained Si Nanobridges
inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot
Lasing in direct-bandgap GeSn alloy grown on Si
inferredcites →https://doi.org/10.1038/srep34082openalex-snapshot
Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
inferredcites →https://doi.org/10.1049/ip-i-1.1982.0043openalex-snapshot
Direct-gap group IV semiconductors based on tin
inferredcites →https://doi.org/10.1063/1.122247openalex-snapshot
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
inferredcites →https://doi.org/10.1063/1.1645667openalex-snapshot
Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys
inferredcites →https://doi.org/10.1063/1.1645677openalex-snapshot
Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications
inferredcites →https://doi.org/10.1063/1.2800296openalex-snapshot
Nonlinear behavior of the energy gap in Ge1−xSnx alloys at 4K
inferredcites →https://doi.org/10.1063/1.3521391openalex-snapshot
Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
inferredcites →https://doi.org/10.1063/1.3536508openalex-snapshot
Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction
inferredcites →https://doi.org/10.1063/1.3592965openalex-snapshot
Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)
inferredcites →https://doi.org/10.1063/1.3606384openalex-snapshot
Raman study of strained Ge1−xSnx alloys
inferredcites →https://doi.org/10.1063/1.3645620openalex-snapshot
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.368286openalex-snapshot
Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.3692735openalex-snapshot
Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
inferredcites →https://doi.org/10.1063/1.3702443openalex-snapshot
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain
inferredcites →https://doi.org/10.1063/1.4792649openalex-snapshot
Achieving direct band gap in germanium through integration of Sn alloying and external strain
inferredcites →https://doi.org/10.1063/1.4816660openalex-snapshot
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4818945openalex-snapshot
Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy
inferredcites →https://doi.org/10.1063/1.4829360openalex-snapshot
Tensely strained GeSn alloys as optical gain media
inferredcites →https://doi.org/10.1063/1.4855436openalex-snapshot
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
inferredcites →https://doi.org/10.1063/1.4898583openalex-snapshot
Characteristics of Sn segregation in Ge/GeSn heterostructures
inferredcites →https://doi.org/10.1063/1.4922529openalex-snapshot
Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)
inferredcites →https://doi.org/10.1063/1.4935590openalex-snapshot
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
inferredcites →https://doi.org/10.1063/1.4943652openalex-snapshot
Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
inferredcites →https://doi.org/10.1063/1.4953788openalex-snapshot
Accurate strain measurements in highly strained Ge microbridges
inferredcites →https://doi.org/10.1063/1.4966141openalex-snapshot
An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
inferredcites →https://doi.org/10.1063/1.4971397openalex-snapshot
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
inferredcites →https://doi.org/10.1063/1.4974202openalex-snapshot
Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress
inferredcites →https://doi.org/10.1063/1.96206openalex-snapshot
Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures
inferredcites →https://doi.org/10.1088/0022-3727/49/22/225102openalex-snapshot
Germanium–tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure
inferredcites →https://doi.org/10.1088/1361-6501/aa5372openalex-snapshot
Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study
inferredcites →https://doi.org/10.1103/physrevb.45.8565openalex-snapshot
Strain-shift coefficients for phonons in Si1−x Gex epilayers on silicon
inferredcites →https://doi.org/10.1103/physrevb.5.580openalex-snapshot
Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
inferredcites →https://doi.org/10.1103/physrevlett.79.1937openalex-snapshot
Interband Transitions in Sn x Ge 1 − x Alloys
inferredcites →https://doi.org/10.1109/jqe.2010.2059000openalex-snapshot
Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
inferredcites →https://doi.org/10.1109/jstqe.2013.2241397openalex-snapshot
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser
inferredcites →https://doi.org/10.1117/12.2004109openalex-snapshot
Development of HgCdTe single-element APDs based detectors for low flux short wave infrared applications
inferredcites →https://doi.org/10.1117/12.2252280openalex-snapshot
Inductively coupled plasma etching of germanium tin for the fabrication of photonic components
inferredcites →https://doi.org/10.1143/jpsj.26.1239openalex-snapshot
A Dynamical Theory of Diffraction for a Distorted Crystal
inferredcites →https://doi.org/10.1149/07508.0387ecstopenalex-snapshot
Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers
inferredcites →https://doi.org/10.1149/2.011304jssopenalex-snapshot
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
inferredcites →https://doi.org/10.1149/2.013304jssopenalex-snapshot
Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study
inferredcites →https://doi.org/10.1364/oe.20.011316openalex-snapshot
An electrically pumped germanium laser
inferredcites →https://doi.org/10.1364/oe.20.027297openalex-snapshot
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
inferredcites →https://doi.org/10.1364/oe.23.007924openalex-snapshot
Theoretical investigation of tensile strained GeSn waveguide with Si_3N_4 liner stressor for mid-infrared detector and modulator applications
inferredcites →https://doi.org/10.1364/oe.23.016740openalex-snapshot
Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics
inferredcites →https://doi.org/10.1364/oe.24.004519openalex-snapshot
Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
inferredcites →https://doi.org/10.1364/ome.4.001178openalex-snapshot
Structural and optical characteristics of Ge_1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers
inferredcites →https://doi.org/10.7567/jjap.55.091301openalex-snapshot
Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4678156openalex-extracted
Mechanism of High Electrical Strain and Temperature Stability in Sm-Doped and Textured PNN-PHT Piezoceramics by Defect Engineering
inferred← citeshttps://doi.org/10.1002/adfm.202301559openalex-snapshot
Single Phase Trimetallic Spinel CoCr x Rh 2‐ x O 4 Nanofibers for Highly Efficient Oxygen Evolution Reaction under Freshwater Mimicking Seawater Conditions
inferred← citeshttps://doi.org/10.1002/admt.202201136openalex-snapshot
Single‐Crystalline Ge1−xSnx/Si p–n Heterojunction Photodiodes with Sn Compositions up to 10%
inferred← citeshttps://doi.org/10.1002/admt.202501542openalex-snapshot
Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers
inferred← citeshttps://doi.org/10.1002/andp.201800396openalex-snapshot
Experimental Calibration of Sn‐Related Varshni Parameters for High Sn Content GeSn Layers
inferred← citeshttps://doi.org/10.1002/jrs.5874openalex-snapshot
Temperature dependence of Raman scattering in GeSn films
inferred← citeshttps://doi.org/10.1002/jrs.6098openalex-snapshot
Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
inferred← citeshttps://doi.org/10.1002/pssa.201700743openalex-snapshot
Growth of Ge1−xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4
inferred← citeshttps://doi.org/10.1002/pssr.202300348openalex-snapshot
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnxMicrodisks
inferred← citeshttps://doi.org/10.1016/b978-0-12-812136-8.00004-9openalex-snapshot
Molecular Beam Epitaxy Growth of SiGeSn Alloys
inferred← citeshttps://doi.org/10.1016/bs.semsem.2018.02.003openalex-snapshot
Group IV Nanowires for Carbon-Free Energy Conversion
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.155817openalex-snapshot
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting
inferred← citeshttps://doi.org/10.1016/j.ceramint.2024.10.093openalex-snapshot
Enhancing the performance of PNN-PHT perovskite ferroelectric via configurational entropy strategy: Component design, electric properties, and mechanism analysis
inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.159696openalex-snapshot
Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.182376openalex-snapshot
Optimizing electrostrain in textured PNN-PHT piezoceramics through defect engineering
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.05.006openalex-snapshot
Impact of thickness on the structural properties of high tin content GeSn layers
inferred← citeshttps://doi.org/10.1016/j.mssp.2026.110837openalex-snapshot
Raman study on Si1−xSnx epitaxial layers to determine the composition- and strain-shift coefficients
inferred← citeshttps://doi.org/10.1016/j.optmat.2024.114987openalex-snapshot
Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.vacuum.2023.111868openalex-snapshot
Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b02225openalex-snapshot
Halogen-Induced Crystallinity and Size Tuning of Microwave Synthesized Germanium Nanocrystals
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b03909openalex-snapshot
Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents
inferred← citeshttps://doi.org/10.1021/acs.jpcc.0c11637openalex-snapshot
Structural Characterization of Oleylamine- and Dodecanethiol-Capped Ge1–xSnx Alloy Nanocrystals
inferred← citeshttps://doi.org/10.1021/acs.jpcc.2c00063openalex-snapshot
Improved Surface Passivation of Colloidal Ge1–xSnx Nanoalloys through Amorphous SiO2 Shell Growth
inferred← citeshttps://doi.org/10.1021/acs.nanolett.0c01039openalex-snapshot
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
inferred← citeshttps://doi.org/10.1021/acsami.0c06212openalex-snapshot
Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
inferred← citeshttps://doi.org/10.1021/acsami.0c15887openalex-snapshot
GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
inferred← citeshttps://doi.org/10.1021/acsami.1c15181openalex-snapshot
Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption
inferred← citeshttps://doi.org/10.1021/acsami.2c01652openalex-snapshot
Microstructuring to Improve the Thermal Stability of GeSn Layers
inferred← citeshttps://doi.org/10.1021/acsami.3c15285openalex-snapshot
Rashba Metamaterials and Metasurfaces with Zero Reflectivity and Effect of Surface States in Ultrathin Metal Films
inferred← citeshttps://doi.org/10.1021/acsanm.0c02569openalex-snapshot
Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors
inferred← citeshttps://doi.org/10.1021/acsanm.8b01068openalex-snapshot
Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method
inferred← citeshttps://doi.org/10.1021/acsanm.9b00571openalex-snapshot
GeSn Nanocrystals in GeSnSiO 2 by Magnetron Sputtering for Short-Wave Infrared Detection
inferred← citeshttps://doi.org/10.1021/acsphotonics.6c00376openalex-snapshot
Tunable SWIR Absorption Peaks in GeSn Nanowire Array Photodetectors
inferred← citeshttps://doi.org/10.1038/s41598-022-20483-2openalex-snapshot
On Curie temperature of B20-MnSi films
inferred← citeshttps://doi.org/10.1038/s41699-023-00381-5openalex-snapshot
Covalent bonded bilayers from germanene and stanene with topological giant capacitance effects
inferred← citeshttps://doi.org/10.1039/d0ra04308gopenalex-snapshot
Photoelectrical properties of graphene/doped GeSn vertical heterostructures
inferred← citeshttps://doi.org/10.1039/d0tc03016copenalex-snapshot
Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
inferred← citeshttps://doi.org/10.1039/d3tc01018jopenalex-snapshot
Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence
inferred← citeshttps://doi.org/10.1063/1.4993220openalex-snapshot
Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation
inferred← citeshttps://doi.org/10.1063/1.5000353openalex-snapshot
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K
inferred← citeshttps://doi.org/10.1063/1.5038644openalex-snapshot
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
inferred← citeshttps://doi.org/10.1063/1.5100275openalex-snapshot
Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties
inferred← citeshttps://doi.org/10.1063/5.0066935openalex-snapshot
1D photonic crystal direct bandgap GeSn-on-insulator laser
inferred← citeshttps://doi.org/10.1063/5.0084940openalex-snapshot
Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
inferred← citeshttps://doi.org/10.1063/5.0085107openalex-snapshot
Recrystallization of thick implanted GeSn layers with nanosecond laser annealing
inferred← citeshttps://doi.org/10.1063/5.0333154openalex-snapshot
SiGeSn-on-insulator platform enabled by a novel layer-transfer process technology
inferred← citeshttps://doi.org/10.1088/1361-6463/abae94openalex-snapshot
Impact of ex-situ annealing on strain and composition of MBE grown GeSn
inferred← citeshttps://doi.org/10.1088/1361-6463/ac0218openalex-snapshot
Epitaxial stabilisation of Ge 1 − x Sn x alloys
inferred← citeshttps://doi.org/10.1088/1361-648x/ad0a10openalex-snapshot
Evolution of point defects in pulsed-laser-melted Ge1-x Sn x probed by positron annihilation lifetime spectroscopy
inferred← citeshttps://doi.org/10.1088/1361-648x/ae1c0bopenalex-snapshot
Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties
inferred← citeshttps://doi.org/10.1088/1361-6528/aad66eopenalex-snapshot
Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes
inferred← citeshttps://doi.org/10.1088/1361-6528/aba6b1openalex-snapshot
Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications
inferred← citeshttps://doi.org/10.1088/1361-6528/ac03d7openalex-snapshot
Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress
inferred← citeshttps://doi.org/10.1088/1361-6641/aa8084openalex-snapshot
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
inferred← citeshttps://doi.org/10.1088/1361-6641/aabe05openalex-snapshot
Ex situ n + doping of GeSn alloys via non-equilibrium processing
inferred← citeshttps://doi.org/10.1088/1361-6641/ab9846openalex-snapshot
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors
inferred← citeshttps://doi.org/10.1088/1361-6641/ade820openalex-snapshot
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing
inferred← citeshttps://doi.org/10.1088/2053-1591/aaafecopenalex-snapshot
Abnormal strain in suspended GeSn microstructures
inferred← citeshttps://doi.org/10.1088/2053-1591/ae1d3dopenalex-snapshot
Laser-induced crystallisation of amorphous GeSn and GeSn:C films
inferred← citeshttps://doi.org/10.1103/physrevapplied.20.024021openalex-snapshot
Local Alloy Order in a Ge1−xSnx/Ge Epitaxial Layer
inferred← citeshttps://doi.org/10.1103/physrevmaterials.8.023801openalex-snapshot
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx
inferred← citeshttps://doi.org/10.1109/jphot.2020.2996808openalex-snapshot
Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors
inferred← citeshttps://doi.org/10.1109/jphot.2022.3164943openalex-snapshot
Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
inferred← citeshttps://doi.org/10.1109/jsen.2023.3287880openalex-snapshot
Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications
inferred← citeshttps://doi.org/10.1109/ted.2020.3004123openalex-snapshot
Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors
inferred← citeshttps://doi.org/10.1109/tnano.2021.3115509openalex-snapshot
Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching
inferred← citeshttps://doi.org/10.1116/6.0002957openalex-snapshot
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
inferred← citeshttps://doi.org/10.1116/6.0003565openalex-snapshot
Effects of ion implantation with arsenic and boron in germanium-tin layers
inferred← citeshttps://doi.org/10.1116/6.0003734openalex-snapshot
Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
inferred← citeshttps://doi.org/10.1117/12.2608589openalex-snapshot
1D photonic crystal GeSn-on-insulator nanobeam laser
inferred← citeshttps://doi.org/10.1155/2021/4513577openalex-snapshot
The Use of Digital Image Art under Visual Sensing Technology for Art Education
inferred← citeshttps://doi.org/10.1364/oe.426321openalex-snapshot
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
inferred← citeshttps://doi.org/10.1364/ol.596692openalex-snapshot
GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection
inferred← citeshttps://doi.org/10.1364/ome.588589openalex-snapshot
Comparative study of rapid thermal and microwave annealing on the photoluminescence of compressively-strained GeSn alloys on Si
inferred← citeshttps://doi.org/10.1364/ome.8.003220openalex-snapshot
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
inferred← citeshttps://doi.org/10.15407/spqeo27.04.412openalex-snapshot
Formation and properties of GeSn:C films on silicon substrates
inferred← citeshttps://doi.org/10.21203/rs.3.rs-1761432/v1openalex-snapshot
The origin for the increased Curie temperature of B20-MnSi films
inferred← citeshttps://doi.org/10.23919/mipro.2017.7973387openalex-snapshot
Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy
inferred← citeshttps://doi.org/10.25368/2024.154openalex-snapshot
Fabrication, characterization and application of Si₁₋ₓ₋ᵧGeₓSnᵧ alloys
inferred← citeshttps://doi.org/10.32657/10356/155659openalex-snapshot
High-performance GE/GESN photodetectors in near- and mid-infrared range
inferred← citeshttps://doi.org/10.32657/10356/165574openalex-snapshot
Flexible GE/GESN photodetectors with enhanced performance
inferred← citeshttps://doi.org/10.3390/nano13101701openalex-snapshot
Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles
inferred← citeshttps://doi.org/10.35848/1347-4065/ace5f9openalex-snapshot
Self-organized Ge1−x Sn x quantum dots formed on insulators and their room temperature photoluminescence
inferred← citeshttps://doi.org/10.46620/ursigass.2023.1132.jgho3400openalex-snapshot
Possibility of Si(1-x)Sn(x) alloy System for Photonic Devices: Field-Effect Phototransistors for Near-Infrared Applications
inferred← citeshttps://doi.org/10.70675/0be133d5zb836z4e68z9911zd3c262526796openalex-snapshot
Redistribution des états de contrainte dans l'alliage germanium-étain pour des applications laser CMOS-compatibles à température ambiante et accordables en longueur d'onde
inferred← citeshttps://doi.org/10.70675/19b594bdzcd43z487ez96bbzaabcf5208a87openalex-snapshot
Sources laser compatibles silicium à base de Ge et GeSn à bande interdite directe
inferred← citeshttps://doi.org/10.70675/7bd43706z6f01z4169zb766z245e532d343bopenalex-snapshot
Development of Bragg coherent X-ray diffraction and ptychography methods : application to the study of semiconductor nanostructures
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.