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Direct Bandgap Group IV Epitaxy on Si for Laser Applications

https://doi.org/10.1021/acs.chemmater.5b01327

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s11664-014-3089-2openalex-snapshot

Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.06.036openalex-snapshot

High germanium content SiGe virtual substrates grown at high temperatures

inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.12.014openalex-snapshot

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

inferredcites →https://doi.org/10.1016/j.tsf.2008.08.068openalex-snapshot

Tensile strained Ge layers on strain-relaxed Ge1−Sn /virtual Ge substrates

inferredcites →https://doi.org/10.1016/j.tsf.2011.10.114openalex-snapshot

Growth of silicon based germanium tin alloys

inferredcites →https://doi.org/10.1016/j.tsf.2013.10.064openalex-snapshot

Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

inferredcites →https://doi.org/10.1016/j.tsf.2013.10.078openalex-snapshot

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

inferredcites →https://doi.org/10.1021/cg401652fopenalex-snapshot

Cubic Phase Sn-Rich GeSn Nanocrystals in a Ge Matrix

inferredcites →https://doi.org/10.1021/cm502988yopenalex-snapshot

Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries

inferredcites →https://doi.org/10.1021/ja00381a054openalex-snapshot

Germanium-hydrogen bond strengths in germanes

inferredcites →https://doi.org/10.1021/jp993985jopenalex-snapshot

Thermal Decomposition of Tin Tetrachloride Based on Cl- and Sn-Concentration Measurements

inferredcites →https://doi.org/10.1038/nphoton.2013.67openalex-snapshot

Analysis of enhanced light emission from highly strained germanium microbridges

inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot

Lasing in direct-bandgap GeSn alloy grown on Si

inferredcites →https://doi.org/10.1038/nphoton.2015.1openalex-snapshot

The rise of the GeSn laser

inferredcites →https://doi.org/10.1063/1.1571223openalex-snapshot

Optical gain in materials with indirect transitions

inferredcites →https://doi.org/10.1063/1.1743083openalex-snapshot

Germanium Solidus Curves

inferredcites →https://doi.org/10.1063/1.1848188openalex-snapshot

Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness

inferredcites →https://doi.org/10.1063/1.3367978openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.3415530openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.3658632openalex-snapshot

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.4767381openalex-snapshot

Electronic band structure and effective mass parameters of Ge1-xSnx alloys

inferredcites →https://doi.org/10.1063/1.4772781openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.4803927openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.4829360openalex-snapshot

Tensely strained GeSn alloys as optical gain media

inferredcites →https://doi.org/10.1073/pnas.1107968108openalex-snapshot

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

inferredcites →https://doi.org/10.1088/0022-3727/46/6/065103openalex-snapshot

Optical gain of germanium infrared lasers on different crystal orientations

inferredcites →https://doi.org/10.1088/0268-1242/24/5/055002openalex-snapshot

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

inferredcites →https://doi.org/10.1103/physrevb.41.11992openalex-snapshot

Eight-band k ⋅ p model of strained zinc-blende crystals

inferredcites →https://doi.org/10.1103/physrevb.46.9913openalex-snapshot

Erratum: Eight-bandk⋅pmodel of strained zinc-blende crystals [Phys. Rev. B41, 11 992 (1990)]

inferredcites →https://doi.org/10.1103/physrevb.67.125322openalex-snapshot

Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

inferredcites →https://doi.org/10.1103/physrevb.87.235313openalex-snapshot

Radiative recombination and optical gain spectra in biaxially strained n -type germanium

inferredcites →https://doi.org/10.1103/physrevlett.109.057402openalex-snapshot

Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain

inferredcites →https://doi.org/10.1103/physrevlett.66.2903openalex-snapshot

Anomalous strain relaxation in SiGe thin films and superlattices

inferredcites →https://doi.org/10.1109/3.661466openalex-snapshot

Theoretical model for intravalley and intervalley free-carrier absorption in semiconductor lasers: beyond the classical Drude model

inferredcites →https://doi.org/10.1109/jlt.2008.923643openalex-snapshot

Vector Finite Difference Modesolver for Anisotropic Dielectric Waveguides

inferredcites →https://doi.org/10.1109/jqe.2010.2059000openalex-snapshot

Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

inferredcites →https://doi.org/10.1116/1.586204openalex-snapshot

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

inferredcites →https://doi.org/10.1149/2.011304jssopenalex-snapshot

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

inferredcites →https://doi.org/10.1364/oe.15.011272openalex-snapshot

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

inferredcites →https://doi.org/10.1364/oe.19.025866openalex-snapshot

Strained germanium thin film membrane on silicon substrate for optoelectronics

inferredcites →https://doi.org/10.1364/prj.2.0000a8openalex-snapshot

Direct bandgap germanium-on-silicon inferred from 57% 〈100〉 uniaxial tensile strain [Invited]

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Incoming claims: where this work appears in other papers’ reference lists and arguments.

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inferred← citeshttps://doi.org/10.1002/9781119069225.ch2-5openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/9781119069225.ch2-6openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/adfm.202006329openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/adma.202506919openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/adom.202201024openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/adom.71414openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/advs.201700955openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/aelm.202400561openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/aelm.202500460openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/pssa.201700743openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/qute.202400508openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/smll.201603321openalex-snapshot

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inferred← citeshttps://doi.org/10.1007/978-3-030-68222-4_3openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/bs.semsem.2018.02.003openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.actamat.2019.04.004openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.157086openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159673openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.165453openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.01.041openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.05.006openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2021.126399openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2021.126421openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2022.126954openalex-snapshot

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1016/j.jlumin.2026.121753openalex-snapshot

Systematic investigation of photoluminescence characteristics in GeSn films with varied Sn content by high-resolution and wide-spectrum system

inferred← citeshttps://doi.org/10.1016/j.moem.2017.09.006openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.mssp.2016.12.024openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.mssp.2026.110992openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.mtnano.2019.01.001openalex-snapshot

Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters

inferred← citeshttps://doi.org/10.1016/j.optmat.2022.112633openalex-snapshot

Temperature and doping-dependent interplay between the direct and indirect optical response in buffer-mediated epitaxial germanium

inferred← citeshttps://doi.org/10.1016/j.pcrysgrow.2015.11.001openalex-snapshot

Si–Ge–Sn alloys: From growth to applications

inferred← citeshttps://doi.org/10.1016/j.ssc.2018.09.012openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.sse.2016.10.024openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.sse.2019.03.013openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.sse.2023.108814openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.tsf.2017.10.059openalex-snapshot

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inferred← citeshttps://doi.org/10.1016/j.vibspec.2022.103387openalex-snapshot

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inferred← citeshttps://doi.org/10.1021/acs.chemmater.7b03969openalex-snapshot

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inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b04471openalex-snapshot

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inferred← citeshttps://doi.org/10.1021/acs.jpcc.1c01902openalex-snapshot

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inferred← citeshttps://doi.org/10.1021/acsnano.9b09929openalex-snapshot

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inferred← citeshttps://doi.org/10.1021/acsphotonics.5b00372openalex-snapshot

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GeSn quantum wells as a platform for spin-resolved hole transport

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

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inferred← citeshttps://doi.org/10.1063/5.0196334openalex-snapshot

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inferred← citeshttps://doi.org/10.1063/5.0301383openalex-snapshot

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Dual-barrier GeSn quantum-well lasers with operation up to 150 K

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Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

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Design of tensile-strained GeSn/SiGeSn structure for low threshold mid-infrared laser application

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MBE growth and characterization of strained GeSn/Ge multiple quantum well structures

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Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth

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Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

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Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires

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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

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Epitaxial GeSn: impact of process conditions on material quality

inferred← citeshttps://doi.org/10.1088/1361-6641/aaea32openalex-snapshot

Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates

inferred← citeshttps://doi.org/10.1088/1361-6641/ad14eeopenalex-snapshot

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

inferred← citeshttps://doi.org/10.1088/1674-1056/26/11/116802openalex-snapshot

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

inferred← citeshttps://doi.org/10.1088/1674-1056/26/12/127402openalex-snapshot

A hybrid functional first-principles study on the band structure of non-strained Ge 1− x Sn x alloys

inferred← citeshttps://doi.org/10.1088/1742-6596/1482/1/012016openalex-snapshot

Structure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn

inferred← citeshttps://doi.org/10.1103/physrevapplied.15.014034openalex-snapshot

Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays

inferred← citeshttps://doi.org/10.1103/physrevapplied.15.024031openalex-snapshot

Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge 1 − x Sn x Semiconductors

inferred← citeshttps://doi.org/10.1103/physrevmaterials.4.033604openalex-snapshot

Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

inferred← citeshttps://doi.org/10.1109/group4.2017.8082173openalex-snapshot

Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures

inferred← citeshttps://doi.org/10.1109/iedm.2015.7409615openalex-snapshot

Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform

inferred← citeshttps://doi.org/10.1109/iedm.2016.7838472openalex-snapshot

GeSn lasers for CMOS integration

inferred← citeshttps://doi.org/10.1109/jsen.2021.3074407openalex-snapshot

Simulation of High-Efficiency Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiodes for Sensing and Optical Quantum Applications

inferred← citeshttps://doi.org/10.1109/jstqe.2024.3430060openalex-snapshot

Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K

inferred← citeshttps://doi.org/10.1109/jstqe.2024.3489712openalex-snapshot

Electrically Pumped GeSn Micro-Ring Lasers

inferred← citeshttps://doi.org/10.1109/ted.2017.2742957openalex-snapshot

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

inferred← citeshttps://doi.org/10.1109/ulis.2016.7440043openalex-snapshot

Process modules for GeSn nanoelectronics with high Sn-contents

inferred← citeshttps://doi.org/10.1116/1.4990773openalex-snapshot

Comparison study of the low temperature growth of dilute GeSn and Ge

inferred← citeshttps://doi.org/10.1116/1.5047909openalex-snapshot

TEOS layers for low temperature processing of group IV optoelectronic devices

inferred← citeshttps://doi.org/10.1116/6.0001253openalex-snapshot

Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides

inferred← citeshttps://doi.org/10.1116/6.0002052openalex-snapshot

Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

inferred← citeshttps://doi.org/10.1116/6.0003734openalex-snapshot

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

inferred← citeshttps://doi.org/10.1116/6.0003798openalex-snapshot

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

inferred← citeshttps://doi.org/10.1116/6.0005407openalex-snapshot

STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations

inferred← citeshttps://doi.org/10.1117/12.2211641openalex-snapshot

Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

inferred← citeshttps://doi.org/10.1117/12.2227573openalex-snapshot

(Si)GeSn nanostructures for light emitters

inferred← citeshttps://doi.org/10.1149/2.0061604jssopenalex-snapshot

Saturation Photo-Voltage Methodology for Semiconductor/Insulator Interface Trap Spectroscopy

inferred← citeshttps://doi.org/10.1149/2162-8777/ab80afopenalex-snapshot

PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

inferred← citeshttps://doi.org/10.1149/2162-8777/abaeb2openalex-snapshot

Growth of SiGeSn Thin Films Using Simplified PECVD Reactor towards NIR Sensor Devices

inferred← citeshttps://doi.org/10.1149/2162-8777/adcc4fopenalex-snapshot

Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes

inferred← citeshttps://doi.org/10.1186/s11671-017-2429-6openalex-snapshot

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

inferred← citeshttps://doi.org/10.1364/oe.24.001358openalex-snapshot

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

inferred← citeshttps://doi.org/10.1364/oe.416450openalex-snapshot

Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate

inferred← citeshttps://doi.org/10.1364/ol.43.004558openalex-snapshot

Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%

inferred← citeshttps://doi.org/10.1364/ol.529590openalex-snapshot

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

inferred← citeshttps://doi.org/10.1364/ome.8.003220openalex-snapshot

Crystalline GeSn growth by plasma enhanced chemical vapor deposition

inferred← citeshttps://doi.org/10.1364/prj.385096openalex-snapshot

Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

inferred← citeshttps://doi.org/10.1515/nanoph-2022-0489openalex-snapshot

Scalable fabrication of self‐assembled GeSn vertical nanowires for nanophotonic applications

inferred← citeshttps://doi.org/10.17073/1609-3577-2017-1-38-44openalex-snapshot

MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS

inferred← citeshttps://doi.org/10.2139/ssrn.5717406openalex-snapshot

Systematic investigation of photoluminescence characteristics in GeSn films with varied Sn content by high-solution and wide-spectrum system

inferred← citeshttps://doi.org/10.32657/10356/137192openalex-snapshot

GeSn alloys fabricated by modified sputtering deposition

inferred← citeshttps://doi.org/10.32657/10356/171485openalex-snapshot

Investigation of micro- and nano-scale germanium-tin light sources towards realizing photonic-integrated circuits

inferred← citeshttps://doi.org/10.3390/coatings13020453openalex-snapshot

Effect of Laser Pulse Width and Intensity Distribution on the Crystallographic Characteristics of GeSn Film

inferred← citeshttps://doi.org/10.3390/cryst16040262openalex-snapshot

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.3390/ma13163645openalex-snapshot

Structural Property Study for GeSn Thin Films

inferred← citeshttps://doi.org/10.3390/ma14247637openalex-snapshot

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

inferred← citeshttps://doi.org/10.3390/nano11102556openalex-snapshot

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

inferred← citeshttps://doi.org/10.35848/1347-4065/adaba3openalex-snapshot

SiGe epitaxial growth using screen printing of Al–Ge paste on Si followed by pulsed laser annealing

inferred← citeshttps://doi.org/10.7567/1347-4065/aaec1aopenalex-snapshot

Influence of Sn precursors on Ge 1− x Sn x growth using metal-organic chemical vapor deposition

inferred← citeshttps://doi.org/10.7567/jjap.57.03db01openalex-snapshot

Performance of four-terminal low-temperature polycrystalline-silicon thin-film transistors and their application in CMOS inverters on glass substrates

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