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Ge nanowire photodetector with high photoconductive gain epitaxially integrated on Si substrate

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1021/acs.nanolett.5b04038openalex-snapshot

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor

inferredcites →https://doi.org/10.1021/acsnano.5b05394openalex-snapshot

Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core–Shell Nanowires

inferredcites →https://doi.org/10.1021/acsphotonics.5b00147openalex-snapshot

Ultrafast Carrier Dynamics of a Photo-Excited Germanium Nanowire–Air Metamaterial

inferredcites →https://doi.org/10.1021/am100321ropenalex-snapshot

Network-Enhanced Photoresponse Time of Ge Nanowire Photodetectors

inferredcites →https://doi.org/10.1021/ja0465808openalex-snapshot

Chemical Surface Passivation of Ge Nanowires

inferredcites →https://doi.org/10.1021/ja047435xopenalex-snapshot

Surface Chemistry and Electrical Properties of Germanium Nanowires

inferredcites →https://doi.org/10.1021/jp044491bopenalex-snapshot

Influence of Surface States on Electron Transport through Intrinsic Ge Nanowires

inferredcites →https://doi.org/10.1021/nl080202+openalex-snapshot

Ultrafast Electron and Hole Dynamics in Germanium Nanowires

inferredcites →https://doi.org/10.1021/nl100136bopenalex-snapshot

Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors

inferredcites →https://doi.org/10.1021/nl403112aopenalex-snapshot

Vertical Nanowire Heterojunction Devices Based on a Clean Si/Ge Interface

inferredcites →https://doi.org/10.1021/nl4037559openalex-snapshot

Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nanowire Field Effect Transistors

inferredcites →https://doi.org/10.1021/nl802408yopenalex-snapshot

Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays

inferredcites →https://doi.org/10.1021/nl901548uopenalex-snapshot

Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires

inferredcites →https://doi.org/10.1021/nl9037278openalex-snapshot

Resonant Germanium Nanoantenna Photodetectors

inferredcites →https://doi.org/10.1038/nature04796openalex-snapshot

Ge/Si nanowire heterostructures as high-performance field-effect transistors

inferredcites →https://doi.org/10.1038/nphoton.2014.73openalex-snapshot

Integrated germanium optical interconnects on silicon substrates

inferredcites →https://doi.org/10.1039/9781782625209openalex-snapshot

Semiconductor Nanowires

inferredcites →https://doi.org/10.1063/1.105636openalex-snapshot

Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition

inferredcites →https://doi.org/10.1088/0022-3727/39/21/r01openalex-snapshot

Semiconductor nanowires

inferredcites →https://doi.org/10.1103/physrev.101.1272openalex-snapshot

Surface States on Silicon and Germanium Surfaces

inferredcites →https://doi.org/10.1103/physrevb.74.121302openalex-snapshot

Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

inferredcites →https://doi.org/10.1364/oe.22.011367openalex-snapshot

A high-responsivity photodetector absent metal-germanium direct contact

inferredcites →https://doi.org/10.3390/s110100696openalex-snapshot

Ge-Photodetectors for Si-Based Optoelectronic Integration

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Highly Sensitive and Stable Self‐Powered UV Photodetector Based on Amorphous ZnGa 2 O 4 /NiO Type‐II p–n Heterojunction via Low‐Temperature and Band Alignment

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High‐Performance and Ultrafast Single Germanium Nanowire Photodetectors

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Self‐Powered Nanoscale Photodetectors

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Progress in group-IV semiconductor nanowires based photonic devices

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High-k dielectric interlayered ITO/germanium Schottky photodiodes with low dark current and high photoconductive gain

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Optical absorption enhancement in vertical InP nanowire random structures for photovoltaic applications

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Sb2Se3 nanorods with length dependent photoresponses

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Reduction of interface state density in coaxial TiO2/Ge nanowire assembly-based heterostructure and superior photodetection

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Investigation on the effect of interface state density and series resistance in Ag/Ge-NW/Si (MS) device synthesized by glancing angle deposition technique

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Boron nitride quantum dots-decorated ferroelectric nanofibers for high performance wearable photodetectors

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The dark current suppression of black silicon photodetector by a lateral heterojunction

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Synthesis and morphological control of self-powered broadband photodetector material: A study of bottle brush Co3O4/ZnO heterojunction

inferred← citeshttps://doi.org/10.1021/acs.jpcc.0c06582openalex-snapshot

Effective Separation of Photogenerated Electron–Hole Pairs by Radial Field Facilitates Ultrahigh Photoresponse in Single Semiconductor Nanowire Photodetectors

inferred← citeshttps://doi.org/10.1021/acs.nanolett.0c01039openalex-snapshot

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

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Ultrascaled Germanium Nanowires for Highly Sensitive Photodetection at the Quantum Ballistic Limit

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Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping

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Self-Powered Broadband Photodetectors Material Based on Co3O4–ZnO Heterojunction with Bottlebrush Nanostructure

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Highly Responsive, Polarization Sensitive, Self-Biased Single GeO2-Ge Nanowire Device for Broadband and Low Power Photodetectors

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Vertical InGaAs Nanowire Array Photodiodes on Si

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Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces

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DNA based nanoscale optoelectronic devices enabled by THz driven piezo vibrotronic effect

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Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

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Electrically tunable spectral response in vertical nanowire arrays

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Ferroelectric-gated highly sensitive InGaAs nanowire near-infrared photodetectors

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Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor

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High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method

inferred← citeshttps://doi.org/10.1088/1361-6463/ac6635openalex-snapshot

Review of recent progress, challenges, and prospects of 2D materials-based short wavelength infrared photodetectors

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Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes

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Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

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Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

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High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode*

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Enhanced Absorption of a Patterned Thin Germanium Layer as a High-Contrast Grating

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Investigation of Optoelectronic Properties in Germanium Nanowire Integrated Silicon Substrate Using Kelvin Probe Force Microscopy

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