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Ge-Photodetectors for Si-Based Optoelectronic Integration

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/0470068329openalex-snapshot

Physics of Semiconductor Devices

inferredcites →https://doi.org/10.1007/b117561openalex-snapshot

Physics of Semiconductor Devices

inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.07.029openalex-snapshot

Low surface roughness and threading dislocation density Ge growth on Si (001)

inferredcites →https://doi.org/10.1016/j.mssp.2004.09.079openalex-snapshot

Zero biased Ge-on-Si photodetector on a thin buffer with a bandwidth of 3.2GHz at 1300nm

inferredcites →https://doi.org/10.1016/j.physe.2008.08.038openalex-snapshot

Guided-wave photodetectors in germanium on SOI optical chips

inferredcites →https://doi.org/10.1016/s0921-5107(99)00289-5openalex-snapshot

Advances in the field of poly-Ge on Si near infrared photodetectors

inferredcites →https://doi.org/10.1038/nature08813openalex-snapshot

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

inferredcites →https://doi.org/10.1038/nmat2630openalex-snapshot

Plasmonics for extreme light concentration and manipulation

inferredcites →https://doi.org/10.1038/nphoton.2008.247openalex-snapshot

Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

inferredcites →https://doi.org/10.1038/nphoton.2008.99openalex-snapshot

Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

inferredcites →https://doi.org/10.1063/1.105351openalex-snapshot

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

inferredcites →https://doi.org/10.1063/1.121584openalex-snapshot

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

inferredcites →https://doi.org/10.1063/1.125187openalex-snapshot

High-quality Ge epilayers on Si with low threading-dislocation densities

inferredcites →https://doi.org/10.1063/1.125993openalex-snapshot

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

inferredcites →https://doi.org/10.1063/1.1477267openalex-snapshot

Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

inferredcites →https://doi.org/10.1063/1.1496492openalex-snapshot

High performance germanium-on-silicon detectors for optical communications

inferredcites →https://doi.org/10.1063/1.1699524openalex-snapshot

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

inferredcites →https://doi.org/10.1063/1.1805706openalex-snapshot

Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

inferredcites →https://doi.org/10.1063/1.1993749openalex-snapshot

Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

inferredcites →https://doi.org/10.1063/1.2037200openalex-snapshot

High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

inferredcites →https://doi.org/10.1063/1.2139837openalex-snapshot

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

inferredcites →https://doi.org/10.1063/1.2182110openalex-snapshot

Ge on Si p-i-n photodiodes operating at 10Gbit∕s

inferredcites →https://doi.org/10.1063/1.2337003openalex-snapshot

High bandwidth Ge p-i-n photodetector integrated on Si

inferredcites →https://doi.org/10.1063/1.2709993openalex-snapshot

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.2769750openalex-snapshot

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

inferredcites →https://doi.org/10.1063/1.2841061openalex-snapshot

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

inferredcites →https://doi.org/10.1063/1.3125252openalex-snapshot

Ultralow dark current Ge/Si(100) photodiodes with low thermal budget

inferredcites →https://doi.org/10.1109/16.925232openalex-snapshot

High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration

inferredcites →https://doi.org/10.1109/22.775466openalex-snapshot

Ultrawide-band/high-frequency photodetectors

inferredcites →https://doi.org/10.1109/group4.2006.1708203openalex-snapshot

Waveguide-Integrated Ge p-i-n Photodetectors on SOI Platform

inferredcites →https://doi.org/10.1109/group4.2007.4347656openalex-snapshot

A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector

inferredcites →https://doi.org/10.1109/group4.2007.4347664openalex-snapshot

Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

inferredcites →https://doi.org/10.1109/group4.2009.5338306openalex-snapshot

High-speed RPCVD Ge waveguide photodetector

inferredcites →https://doi.org/10.1109/iedm.2009.5424294openalex-snapshot

Silicon photonics technologies for monolithic electronic-photonic integrated circuit (EPIC) applications: Current progress and future outlook

inferredcites →https://doi.org/10.1109/jlt.1984.1073617openalex-snapshot

Receiver design for high-speed optical-fiber systems

inferredcites →https://doi.org/10.1109/jlt.2006.888923openalex-snapshot

Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications

inferredcites →https://doi.org/10.1109/jqe.2007.893001openalex-snapshot

A Near-Infrared Digital Camera in Polycrystalline Germanium Integrated on Silicon

inferredcites →https://doi.org/10.1109/jstqe.2006.883160openalex-snapshot

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

inferredcites →https://doi.org/10.1109/jstqe.2009.2025142openalex-snapshot

Low Thermal Budget Monolithic Integration of Evanescent-Coupled Ge-on-SOI Photodetector on Si CMOS Platform

inferredcites →https://doi.org/10.1109/led.2007.906814openalex-snapshot

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

inferredcites →https://doi.org/10.1109/led.2007.914095openalex-snapshot

Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

inferredcites →https://doi.org/10.1109/led.2008.920277openalex-snapshot

Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

inferredcites →https://doi.org/10.1109/led.2008.923540openalex-snapshot

Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors

inferredcites →https://doi.org/10.1109/led.2008.923541openalex-snapshot

Novel NiGe MSM Photodetector Featuring Asymmetrical Schottky Barriers Using Sulfur Co-Implantation and Segregation

inferredcites →https://doi.org/10.1109/led.2009.2025782openalex-snapshot

Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

inferredcites →https://doi.org/10.1109/lpt.2004.835631openalex-snapshot

High-Speed Germanium-on-SOI Lateral PIN Photodiodes

inferredcites →https://doi.org/10.1109/lpt.2004.836917openalex-snapshot

High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation

inferredcites →https://doi.org/10.1109/lpt.2005.848546openalex-snapshot

Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

inferredcites →https://doi.org/10.1109/lpt.2006.885623openalex-snapshot

Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules

inferredcites →https://doi.org/10.1109/lpt.2008.2005586openalex-snapshot

High-Speed Metal–Germanium–Metal Configured PIN-Like Ge-Photodetector Under Photovoltaic Mode and With Dopant-Segregated Schottky-Contact Engineering

inferredcites →https://doi.org/10.1109/lpt.2008.928087openalex-snapshot

Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide

inferredcites →https://doi.org/10.1109/lpt.2009.2016761openalex-snapshot

36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD

inferredcites →https://doi.org/10.1109/lpt.2009.2020510openalex-snapshot

Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

inferredcites →https://doi.org/10.1109/ofc.2007.4348675openalex-snapshot

Ge Photodetectors Integrated with Waveguides for Electronic-Photonic Integrated Circuits on CMOS Platform

inferredcites →https://doi.org/10.1109/ofc.2007.6889107openalex-snapshot

A Four-Channel, 10 Gbps Monolithic Optical Receiver In 130nm CMOS With Integrated Ge Waveguide Photodetectors

inferredcites →https://doi.org/10.1109/ofc.2008.4528351openalex-snapshot

40Gb/s Ge-on-SOI waveguide photodetectors by selective Ge growth

inferredcites →https://doi.org/10.1109/ovciso.2006.302697openalex-snapshot

Waveguide Integrated Ge p-i-n Photodetectors on a Silicon-on-Insulator Platform

inferredcites →https://doi.org/10.1109/t-ed.1984.21676openalex-snapshot

New infrared detector on a silicon chip

inferredcites →https://doi.org/10.1117/12.532046openalex-snapshot

Germanium on double-SOI photodetectors for 1550-nm operation

inferredcites →https://doi.org/10.1117/12.545020openalex-snapshot

Comparison between electrical and optical clock distribution for CMOS integrated circuits

inferredcites →https://doi.org/10.1117/12.706586openalex-snapshot

Advances in fully CMOS integrated photonic devices

inferredcites →https://doi.org/10.1117/12.854179openalex-snapshot

Nanometer germanium photodetector with aluminum surface plasmon antenna for enhanced photo-response

inferredcites →https://doi.org/10.1143/jjap.44.l364openalex-snapshot

Si Nano-Photodiode with a Surface Plasmon Antenna

inferredcites →https://doi.org/10.1364/cleo_europe.1998.ctul5openalex-snapshot

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

inferredcites →https://doi.org/10.1364/nfoec.2010.jwa36openalex-snapshot

Waveguide-Integrated Ge/Si Avalanche Photodetector with 105GHz Gain-Bandwidth Product

inferredcites →https://doi.org/10.1364/oe.15.003916openalex-snapshot

High performance, waveguide integrated Ge photodetectors

inferredcites →https://doi.org/10.1364/oe.15.009843openalex-snapshot

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

inferredcites →https://doi.org/10.1364/oe.15.013965openalex-snapshot

31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

inferredcites →https://doi.org/10.1364/oe.17.006252openalex-snapshot

42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

inferredcites →https://doi.org/10.1364/oe.17.007901openalex-snapshot

Ultra-low capacitance and high speed germanium photodetectors on silicon

inferredcites →https://doi.org/10.1364/oe.18.000096openalex-snapshot

Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides

inferredcites →https://doi.org/10.1364/oe.18.004986openalex-snapshot

CMOS-integrated high-speed MSM germanium waveguide photodetector

inferredcites →https://doi.org/10.1364/ofc.2010.own2openalex-snapshot

Horizontal p-i-n High-Speed Ge Waveguide Detector on Large Cross-section SOI Waveguide

inferredcites →https://doi.org/10.1364/ofc.2010.own3openalex-snapshot

CMOS-Integrated Low-Noise Germanium Waveguide Avalanche Photodetector Operating at 40Gbps

inferredcites →https://doi.org/10.1364/ol.35.000679openalex-snapshot

Ge-on-Si laser operating at room temperature

inferredcites →https://doi.org/10.1557/proc-0891-ee07-24openalex-snapshot

Growth of high quality Ge epitaxial layer on Si(100) substrate using ultra thin Si0.5Ge0.5 buffer

inferredcites →https://doi.org/10.1557/proc-607-279openalex-snapshot

Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon

inferredcites →https://doi.org/10.7567/ssdm.2007.b-1-2openalex-snapshot

Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

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Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors

inferred← citeshttps://doi.org/10.1021/acsnano.3c04619openalex-snapshot

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

inferred← citeshttps://doi.org/10.1021/acsnano.7b04792openalex-snapshot

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

inferred← citeshttps://doi.org/10.1021/acsphotonics.1c01777openalex-snapshot

Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

inferred← citeshttps://doi.org/10.1021/acsphotonics.2c00100openalex-snapshot

Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors

inferred← citeshttps://doi.org/10.1021/acsphotonics.5c01893openalex-snapshot

Waveguide Integrated Self-Powered MoS 2 Photodetectors in the Shortwave Infrared Wavelengths

inferred← citeshttps://doi.org/10.1021/acsphotonics.5c02680openalex-snapshot

Wavelength-Switchable Positive and Negative Photoconductivity in a Ge/Si Heterojunction Nanowire

inferred← citeshttps://doi.org/10.1021/acsphotonics.9b01585openalex-snapshot

Ultrafast Plasmonic Graphene Photodetector Based on the Channel Photothermoelectric Effect

inferred← citeshttps://doi.org/10.1021/nl303288gopenalex-snapshot

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

inferred← citeshttps://doi.org/10.1038/nature21050openalex-snapshot

Photovoltage field-effect transistors

inferred← citeshttps://doi.org/10.1038/nphoton.2013.253openalex-snapshot

Chip-integrated ultrafast graphene photodetector with high responsivity

inferred← citeshttps://doi.org/10.1038/nphoton.2013.257openalex-snapshot

Graphene benefits

inferred← citeshttps://doi.org/10.1038/s41427-018-0035-4openalex-snapshot

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

inferred← citeshttps://doi.org/10.1038/s41566-020-0647-4openalex-snapshot

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

inferred← citeshttps://doi.org/10.1038/s41598-020-60000-xopenalex-snapshot

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

inferred← citeshttps://doi.org/10.1038/s41598-025-06259-4openalex-snapshot

All-optical convolutional neural network based on phase change materials in silicon photonics platform

inferred← citeshttps://doi.org/10.1038/srep14795openalex-snapshot

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

inferred← citeshttps://doi.org/10.1038/srep22709openalex-snapshot

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers

inferred← citeshttps://doi.org/10.1039/c9tc00797kopenalex-snapshot

A high-performance near-infrared light photovoltaic detector based on a multilayered PtSe 2 /Ge heterojunction

inferred← citeshttps://doi.org/10.1039/d2tc00830kopenalex-snapshot

High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions

inferred← citeshttps://doi.org/10.1039/d3nh00246bopenalex-snapshot

Functionalizing nanophotonic structures with 2D van der Waals materials

inferred← citeshttps://doi.org/10.1039/d3tc01018jopenalex-snapshot

Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence

inferred← citeshttps://doi.org/10.1039/d4nr00305eopenalex-snapshot

Photodetectors integrating waveguides and semiconductor materials

inferred← citeshttps://doi.org/10.1051/epjap/2012120106openalex-snapshot

Numerical investigation of the effect of optical pulse position on the response of an unbiased BGMSM photodetector using ADI method

inferred← citeshttps://doi.org/10.1063/1.4798322openalex-snapshot

Improvement of Ge-on-Si photodiodes by black silicon light trapping

inferred← citeshttps://doi.org/10.1063/1.4813841openalex-snapshot

Heteroepitaxial Ge-on-Si by DC magnetron sputtering

inferred← citeshttps://doi.org/10.1063/1.4825072openalex-snapshot

Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm

inferred← citeshttps://doi.org/10.1063/1.4862226openalex-snapshot

Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well

inferred← citeshttps://doi.org/10.1063/1.4865955openalex-snapshot

Interface and nanostructure evolution of cobalt germanides on Ge(001)

inferred← citeshttps://doi.org/10.1063/1.4873935openalex-snapshot

Franz-Keldysh effect in GeSn pin photodetectors

inferred← citeshttps://doi.org/10.1063/1.4927836openalex-snapshot

Ge-on-Si photodiode with black silicon boosted responsivity

inferred← citeshttps://doi.org/10.1063/1.4941807openalex-snapshot

High sensitivity silicon single nanowire junctionless phototransistor

inferred← citeshttps://doi.org/10.1063/1.4942393openalex-snapshot

Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes

inferred← citeshttps://doi.org/10.1063/1.4982648openalex-snapshot

Ge nanowire photodetector with high photoconductive gain epitaxially integrated on Si substrate

inferred← citeshttps://doi.org/10.1063/1.4998457openalex-snapshot

SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation

inferred← citeshttps://doi.org/10.1063/1.5100039openalex-snapshot

Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics

inferred← citeshttps://doi.org/10.1063/5.0185557openalex-snapshot

A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

inferred← citeshttps://doi.org/10.1080/09500839.2011.581704openalex-snapshot

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

inferred← citeshttps://doi.org/10.1080/15599612.2024.2342279openalex-snapshot

Review of sensing and actuation technologies – from optical MEMS and nanophotonics to photonic nanosystems

inferred← citeshttps://doi.org/10.1088/0268-1242/30/8/085016openalex-snapshot

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling

inferred← citeshttps://doi.org/10.1088/0957-4484/26/15/155701openalex-snapshot

Ba termination of Ge(001) studied with STM

inferred← citeshttps://doi.org/10.1088/0957-4484/26/38/385701openalex-snapshot

Growth and evolution of nickel germanide nanostructures on Ge(001)

inferred← citeshttps://doi.org/10.1088/0957-4484/27/5/055705openalex-snapshot

Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

inferred← citeshttps://doi.org/10.1088/1361-6463/abead8openalex-snapshot

Nitrogen induced localised-state ensemble effect on multi quantum well GaInNAs with low indium concentration

inferred← citeshttps://doi.org/10.1088/1361-648x/aad0c0openalex-snapshot

Strained germanium nanowire optoelectronic devices for photonic-integrated circuits

inferred← citeshttps://doi.org/10.1088/1361-6528/ab647eopenalex-snapshot

Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes

inferred← citeshttps://doi.org/10.1088/1361-6528/ab91efopenalex-snapshot

Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas

inferred← citeshttps://doi.org/10.1088/1361-6641/aa65b4openalex-snapshot

High speed MSM photodetector based on Ge nanowires network

inferred← citeshttps://doi.org/10.1088/1361-6641/ab6bf7openalex-snapshot

Fabrication and characterization of sensitive vertical P-i-N germanium photodiodes as infrared detectors

inferred← citeshttps://doi.org/10.1088/1674-1056/23/3/038506openalex-snapshot

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p—i—n photodetectors

inferred← citeshttps://doi.org/10.1088/1674-1056/26/12/127309openalex-snapshot

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

inferred← citeshttps://doi.org/10.1088/1742-6596/541/1/012026openalex-snapshot

Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1088/1742-6596/619/1/012001openalex-snapshot

Thin film germanium on silicon created via ion implantation and oxide trapping

inferred← citeshttps://doi.org/10.1098/rsta.2013.0113openalex-snapshot

Silicon-based silicon–germanium–tin heterostructure photonics

inferred← citeshttps://doi.org/10.1109/ecoc48923.2020.9333224openalex-snapshot

Demonstration of Classification Task Using Optical Neural Network Based on Si Microring Resonator Crossbar Array

inferred← citeshttps://doi.org/10.1109/edtm47692.2020.9117808openalex-snapshot

Fabrication and Characterization of SnO2/CH3NH3PbI3 based Photodetector

inferred← citeshttps://doi.org/10.1109/gucon48875.2020.9231181openalex-snapshot

ITO/ZnO/CH3NH3PbI3/Ag Hetro-Structure based Photodetector

inferred← citeshttps://doi.org/10.1109/icsc60394.2023.10441569openalex-snapshot

Photodetector based on Hybrid Perovskite CH3NH3PbI3/TiO2 Heterojunction

inferred← citeshttps://doi.org/10.1109/icsict49897.2020.9278192openalex-snapshot

A novel SOI-based ridge waveguide SiGe Heterojunction Phototransistor

inferred← citeshttps://doi.org/10.1109/jeds.2022.3195210openalex-snapshot

Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

inferred← citeshttps://doi.org/10.1109/jlt.2018.2791720openalex-snapshot

Design of Resonant Cavity-Enhanced Schottky Graphene/Silicon Photodetectors at 1550 nm

inferred← citeshttps://doi.org/10.1109/jlt.2025.3535637openalex-snapshot

High-Efficiency Reconfigurable Optical Convolutional Neural Network

inferred← citeshttps://doi.org/10.1109/jphot.2018.2871823openalex-snapshot

A 1-D Heterodyne Lens-Free Optical Phased Array Camera With Reference Phase Shifting

inferred← citeshttps://doi.org/10.1109/jphot.2023.3236817openalex-snapshot

High-Performance Lateral Metal-Germanium-Metal SWIR Photodetectors Using a-Si:H Interlayer for Dark Current Reduction

inferred← citeshttps://doi.org/10.1109/jsen.2022.3174736openalex-snapshot

Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-Infrared Photodetector

inferred← citeshttps://doi.org/10.1109/jstqe.2013.2288291openalex-snapshot

Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector

inferred← citeshttps://doi.org/10.1109/jstqe.2018.2846027openalex-snapshot

Defects and their reduction in Ge selective epitaxy and coalescence layer on Si with semicylindrical voids on SiO $_{2}$ masks

inferred← citeshttps://doi.org/10.1109/jstqe.2024.3419839openalex-snapshot

Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors

inferred← citeshttps://doi.org/10.1109/jstqe.2024.3453252openalex-snapshot

Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers

inferred← citeshttps://doi.org/10.1109/led.2011.2181814openalex-snapshot

Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics

inferred← citeshttps://doi.org/10.1109/mssc.2012.2232791openalex-snapshot

Silicon Photonics: The Next Fabless Semiconductor Industry

inferred← citeshttps://doi.org/10.1109/srse67406.2025.11357371openalex-snapshot

Modeling of Lifetime Assessment Method for Germanium-Silicon Photodetectors under High-Temperature Stress

inferred← citeshttps://doi.org/10.1109/ssd.2017.8166906openalex-snapshot

Investigation of optoelectronic properties of amorphous silicon germanium photodetectors

inferred← citeshttps://doi.org/10.1109/tcsi.2017.2733521openalex-snapshot

A Silicon-Based Low-Power Broadband Transimpedance Amplifier

inferred← citeshttps://doi.org/10.1109/tcsi.2019.2909284openalex-snapshot

A 10-Gb/s −18.8 dBm Sensitivity 5.7 mW Fully-Integrated Optoelectronic Receiver With Avalanche Photodetector in 0.13-$\mu$ m CMOS

inferred← citeshttps://doi.org/10.1109/ted.2013.2241066openalex-snapshot

High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection

inferred← citeshttps://doi.org/10.1109/ted.2024.3350568openalex-snapshot

Schottky Barrier Height Modification of Graphene/Ge by Al 2 O 3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

inferred← citeshttps://doi.org/10.1109/ted.2024.3438679openalex-snapshot

Unique Detection Properties of Vertical Ge Avalanche Detectors With Ge Nanopillar Array

inferred← citeshttps://doi.org/10.11113/jt.v72.3225openalex-snapshot

Electrodeposited Germanium On Silicon Substrate Using A Mixture Of Germanium Tetrachloride And Propylene Glycol

inferred← citeshttps://doi.org/10.1116/6.0003933openalex-snapshot

Epitaxial SiGeSn grown on Si by ion implantation

inferred← citeshttps://doi.org/10.1117/12.2001221openalex-snapshot

A compact evanescently-coupled germanium PIN waveguide photodetector

inferred← citeshttps://doi.org/10.1117/12.2009453openalex-snapshot

Silicon photonics for advanced optical communication systems

inferred← citeshttps://doi.org/10.1117/12.2017008openalex-snapshot

Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors

inferred← citeshttps://doi.org/10.1117/12.2083538openalex-snapshot

Design and development of SiGe based near-infrared photodetectors

inferred← citeshttps://doi.org/10.1117/12.2189761openalex-snapshot

Sputtered germanium/silicon devices for photonics applications

inferred← citeshttps://doi.org/10.1117/12.2193179openalex-snapshot

Design and development of wafer-level near-infrared micro-camera

inferred← citeshttps://doi.org/10.1117/12.2229650openalex-snapshot

Development of silicon-germanium visible-near infrared arrays

inferred← citeshttps://doi.org/10.1117/12.2277958openalex-snapshot

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

inferred← citeshttps://doi.org/10.1117/12.2576295openalex-snapshot

Colloidal quantum dot-silicon photodetector based on TCAD simulation

inferred← citeshttps://doi.org/10.1117/12.3013933openalex-snapshot

Comparison of nano holes and nano pillars moth eye structures for mid-wave infrared

inferred← citeshttps://doi.org/10.1117/12.923854openalex-snapshot

40Gbit/s germanium waveguide photodetector on silicon

inferred← citeshttps://doi.org/10.1126/sciadv.1602783openalex-snapshot

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

inferred← citeshttps://doi.org/10.1134/s1063782615030082openalex-snapshot

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

inferred← citeshttps://doi.org/10.1134/s1063782615100231openalex-snapshot

Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

inferred← citeshttps://doi.org/10.1134/s1063782616090220openalex-snapshot

Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

inferred← citeshttps://doi.org/10.1134/s1063782618060064openalex-snapshot

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers

inferred← citeshttps://doi.org/10.1143/jjap.51.06ff04openalex-snapshot

Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform

inferred← citeshttps://doi.org/10.1149/2.001203jssopenalex-snapshot

Investigation of Growth Kinetics, Inter-Diffusion and Quality of Ge-on-Si Epitaxial Film by a Three-Step Growth Approach

inferred← citeshttps://doi.org/10.1149/2.0041502jssopenalex-snapshot

Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

inferred← citeshttps://doi.org/10.1149/2.0351609jssopenalex-snapshot

Strain-Controlled of Compressive/Tensile Ge Epilayers on Si by Electron Cyclotron Resonance Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1155/2012/916275openalex-snapshot

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

inferred← citeshttps://doi.org/10.1155/2014/906037openalex-snapshot

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1186/1556-276x-9-337openalex-snapshot

Seedless growth of zinc oxide flower-shaped structures on multilayer graphene by electrochemical deposition

inferred← citeshttps://doi.org/10.1186/s11671-015-0943-yopenalex-snapshot

Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature

inferred← citeshttps://doi.org/10.1186/s41476-020-00127-6openalex-snapshot

Integrated Er/Si Schottky Photodetectors on the end facet of optical waveguides

inferred← citeshttps://doi.org/10.1201/9781315153063-16openalex-snapshot

Chapter 12: Photodetectors

inferred← citeshttps://doi.org/10.12693/aphyspola.145.3openalex-snapshot

Enhanced Opto-Electronic Properties of Bi:CuO/n-Si Heterojunctions for Photodetector Applications

inferred← citeshttps://doi.org/10.1364/ao.57.002962openalex-snapshot

Size reduction of Ge-on-Si photodetectors via a photonic bandgap

inferred← citeshttps://doi.org/10.1364/cleo_si.2014.stu3g.2openalex-snapshot

Rapid melt grown Germanium p-i-n photodiode wrapped around a Silicon waveguide

inferred← citeshttps://doi.org/10.1364/cleo_si.2026.stu2d.6openalex-snapshot

High Responsivity Back-Reflector-Assisted Suspended Ge MSM Infrared Photodetectors for 1550 nm Wavelength

inferred← citeshttps://doi.org/10.1364/oe.20.001096openalex-snapshot

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

inferred← citeshttps://doi.org/10.1364/oe.21.022429openalex-snapshot

Metal-optic cavity for a high efficiency sub-fF Germanium photodiode on a Silicon waveguide

inferred← citeshttps://doi.org/10.1364/oe.21.028387openalex-snapshot

Germanium photodetector with 60 GHz bandwidth using inductive gain peaking

inferred← citeshttps://doi.org/10.1364/oe.22.000839openalex-snapshot

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

inferred← citeshttps://doi.org/10.1364/oe.23.016967openalex-snapshot

Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

inferred← citeshttps://doi.org/10.1364/oe.25.032110openalex-snapshot

Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD

inferred← citeshttps://doi.org/10.1364/oe.27.020516openalex-snapshot

Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths

inferred← citeshttps://doi.org/10.1364/oe.27.033724openalex-snapshot

Study on epsilon crossover wavelength tuning of heavily doped germanium-on-silicon in mid-infrared range

inferred← citeshttps://doi.org/10.1364/oe.448460openalex-snapshot

Light-induced thermomagnetic recording of thin-film magnet CoFeB on silicon waveguide for on-chip magneto-optical memory

inferred← citeshttps://doi.org/10.1364/ol.41.003686openalex-snapshot

Asymmetrically contacted germanium photodiode using a metal–interlayer–semiconductor–metal structure for extremely large dark current suppression

inferred← citeshttps://doi.org/10.1364/ol.41.004398openalex-snapshot

Ellipsometric characterization of doped Ge_095Sn_005 films in the infrared range for plasmonic applications

inferred← citeshttps://doi.org/10.1364/ol.42.005141openalex-snapshot

High-performance Ge-on-Si photodetector with optimized DBR location

inferred← citeshttps://doi.org/10.1364/ol.514161openalex-snapshot

Design and optimization of a multidirectional photodetector in optoelectronic integration

inferred← citeshttps://doi.org/10.1364/prj.455291openalex-snapshot

67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission

inferred← citeshttps://doi.org/10.1515/freq-2019-0143openalex-snapshot

Photonic Components for Signal Generation and Distribution for Large Aperture Radar in Autonomous Driving

inferred← citeshttps://doi.org/10.1515/nanoph-2015-0012openalex-snapshot

State‐of‐the‐art photodetectors for optoelectronic integration at telecommunication wavelength

inferred← citeshttps://doi.org/10.1515/nanoph-2016-0172openalex-snapshot

Active 2D materials for on‐chip nanophotonics and quantum optics

inferred← citeshttps://doi.org/10.1515/nanoph-2020-0093openalex-snapshot

Hybrid silicon photonic devices with two‐dimensional materials

inferred← citeshttps://doi.org/10.1587/transele.e101.c.537openalex-snapshot

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

inferred← citeshttps://doi.org/10.1680/jemmr.22.00143openalex-snapshot

Synthesis and characterization of hybrid ternary Cd1−x Fe x S nanoparticles

inferred← citeshttps://doi.org/10.2139/ssrn.4856049openalex-snapshot

Lateral Incidence Ge-on-Si Photophotodetector with High Saturation Characteristics

inferred← citeshttps://doi.org/10.2139/ssrn.4884097openalex-snapshot

Lasing Characteristics of Gainasp Sch–Mqw Laser Diodes Grown on Hydrophilic-Bonded Inp–Si Substrates

inferred← citeshttps://doi.org/10.25781/kaust-0u7p8openalex-snapshot

High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

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