On the public citation graph

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

0 signed · 53 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.

Claim with ORCID

Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.

See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1109/jeds.2020.3042050openalex-snapshot

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

inferredcites →https://doi.org/10.1109/jeds.2021.3103847openalex-snapshot

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

inferredcites →https://doi.org/10.1109/led.2008.2000792openalex-snapshot

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

inferredcites →https://doi.org/10.1109/led.2012.2186116openalex-snapshot

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

inferredcites →https://doi.org/10.1109/led.2012.2196751openalex-snapshot

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

inferredcites →https://doi.org/10.1109/led.2014.2367093openalex-snapshot

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

inferredcites →https://doi.org/10.1109/led.2015.2421311openalex-snapshot

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

inferredcites →https://doi.org/10.1109/led.2018.2864135openalex-snapshot

High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment

inferredcites →https://doi.org/10.1109/led.2019.2915555openalex-snapshot

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

inferredcites →https://doi.org/10.1109/led.2020.2984727openalex-snapshot

GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

inferredcites →https://doi.org/10.1109/ted.2013.2268160openalex-snapshot

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

inferredcites →https://doi.org/10.1109/ted.2013.2277772openalex-snapshot

InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

inferredcites →https://doi.org/10.1109/ted.2020.3034076openalex-snapshot

Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration

inferredcites →https://doi.org/10.1143/jjap.46.l842openalex-snapshot

Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

inferredcites →https://doi.org/10.7567/jjap.52.08jn14openalex-snapshot

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4649906openalex-extracted

inferred← citeshttps://doi.org/10.1002/pssa.202200476openalex-snapshot

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

inferred← citeshttps://doi.org/10.1002/rar2.70064openalex-snapshot

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

inferred← citeshttps://doi.org/10.1007/s10853-025-11237-2openalex-snapshot

Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)

inferred← citeshttps://doi.org/10.1007/s10854-025-15443-1openalex-snapshot

Role of in-situ SiNx in ohmic contact realization in AlN/GaN HEMTs

inferred← citeshttps://doi.org/10.1007/s11664-024-11620-wopenalex-snapshot

The Influence of AlGaN Spacer Thickness on the Electrical Properties of InAlN/AlGaN/AlN/GaN Heterostructure

inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.179922openalex-snapshot

Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment

inferred← citeshttps://doi.org/10.1016/j.mee.2023.111998openalex-snapshot

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

inferred← citeshttps://doi.org/10.1016/j.mejo.2022.105602openalex-snapshot

Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors

inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208923openalex-snapshot

Enhancement of Sc0.18Al0.82N/GaN HEMTs performance by channel engineering

inferred← citeshttps://doi.org/10.1016/j.optmat.2022.112346openalex-snapshot

Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation

inferred← citeshttps://doi.org/10.1016/j.rinp.2024.107526openalex-snapshot

Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems

inferred← citeshttps://doi.org/10.1063/5.0098714openalex-snapshot

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0171168openalex-snapshot

Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

inferred← citeshttps://doi.org/10.1063/5.0194197openalex-snapshot

Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

inferred← citeshttps://doi.org/10.1063/5.0214563openalex-snapshot

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

inferred← citeshttps://doi.org/10.1063/5.0221783openalex-snapshot

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

inferred← citeshttps://doi.org/10.1063/5.0311448openalex-snapshot

Ultralow contact resistance of 0.058 Ω mm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors

inferred← citeshttps://doi.org/10.1063/5.0341599openalex-snapshot

Preparation of non-alloyed metal contacts to n-type gallium nitride with ultralow specific contact resistivity of 5.8 × 10−9 Ω cm2

inferred← citeshttps://doi.org/10.1088/1361-6641/acca9dopenalex-snapshot

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

inferred← citeshttps://doi.org/10.1088/1402-4896/acf3b6openalex-snapshot

Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications

inferred← citeshttps://doi.org/10.1088/1674-1056/ac891bopenalex-snapshot

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

inferred← citeshttps://doi.org/10.1088/1674-1056/acd8a1openalex-snapshot

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

inferred← citeshttps://doi.org/10.1109/edtm65772.2026.11496924openalex-snapshot

0.15-µm InAlN/GaN HEMTs on Si for Simultaneous High Power and Low Noise Application in mm-Wave

inferred← citeshttps://doi.org/10.1109/ims37964.2023.10188112openalex-snapshot

Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz

inferred← citeshttps://doi.org/10.1109/jeds.2023.3234695openalex-snapshot

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

inferred← citeshttps://doi.org/10.1109/led.2024.3402310openalex-snapshot

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

inferred← citeshttps://doi.org/10.1109/led.2024.3470117openalex-snapshot

High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching

inferred← citeshttps://doi.org/10.1109/led.2026.3651778openalex-snapshot

GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)

inferred← citeshttps://doi.org/10.1109/led.2026.3678989openalex-snapshot

GaN-on-Si HEMTs for Low-Voltage FR2 Applications Enabled by Reactive-Sputtered n ++ -GaN Ohmic Contacts

inferred← citeshttps://doi.org/10.1109/lmwt.2025.3630486openalex-snapshot

AlGaN/GaN MIS-HEMT Nominally Free of Access Regions on Si for Low-Voltage RF Applications

inferred← citeshttps://doi.org/10.1109/sslchinaifws60785.2023.10399666openalex-snapshot

High Saturation Current HEMTs with ε-Ga2O3/m-GaN Heterojunctions Towards a Potential Candidate for Radio Frequency Applications

inferred← citeshttps://doi.org/10.1109/ted.2023.3276338openalex-snapshot

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

inferred← citeshttps://doi.org/10.3390/coatings12050626openalex-snapshot

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

inferred← citeshttps://doi.org/10.3390/electronics13132490openalex-snapshot

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

inferred← citeshttps://doi.org/10.35848/1882-0786/ad7349openalex-snapshot

Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage

inferred← citeshttps://doi.org/10.35848/1882-0786/ada2d8openalex-snapshot

Multi-channel AlN/GaN Schottky barrier diodes

inferred← citeshttps://doi.org/10.70675/9b80e4abz6d20z403fzaf08z74b8bcbad5c3openalex-snapshot

Reprise de croissance MOVPE des contacts ohmiques pour des dispositifs de type HEMT à base de GaN

Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.