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https://doi.org/10.2139/ssrn.4649906

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inferredcites →https://doi.org/10.1002/0470068329openalex-extracted
Physics of Semiconductor Devices
inferredcites →https://doi.org/10.1063/1.3615279openalex-extracted
High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised
inferredcites →https://doi.org/10.1063/1.371866openalex-extracted
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
inferredcites →https://doi.org/10.1063/1.5008731openalex-extracted
90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application
inferredcites →https://doi.org/10.1063/5.0079359openalex-extracted
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
inferredcites →https://doi.org/10.1109/55.29656openalex-extracted
Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs
inferredcites →https://doi.org/10.1109/bcicts50416.2021.9682456openalex-extracted
Electric Field Engineering in Graded-Channel GaN-Based HEMTs
inferredcites →https://doi.org/10.1109/devic50843.2021.9455878openalex-extracted
A Simulation Study of 2-D Electron Gas in GaN HEMT for High- Speed Applications
inferredcites →https://doi.org/10.1109/eumic.2015.7345103openalex-extracted
AlGaN/GaN HEMT with fT:100GHz and fmax:128GHz
inferredcites →https://doi.org/10.1109/icept50128.2020.9202882openalex-extracted
Gallium Nitride Dual Two - Dimensional Electron Gas HEMT with a Good Performance: Based on TCAD simulations
inferredcites →https://doi.org/10.1109/icsict.2018.8564875openalex-extracted
Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate
inferredcites →https://doi.org/10.1109/icspc46172.2019.8976482openalex-extracted
Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications
inferredcites →https://doi.org/10.1109/jeds.2023.3236304openalex-extracted
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band
inferredcites →https://doi.org/10.1109/led.2006.881020openalex-extracted
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
inferredcites →https://doi.org/10.1109/led.2011.2158386openalex-extracted
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
inferredcites →https://doi.org/10.1109/led.2013.2297433openalex-extracted
Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
inferredcites →https://doi.org/10.1109/led.2015.2404358openalex-extracted
Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
inferredcites →https://doi.org/10.1109/led.2016.2609938openalex-extracted
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
inferredcites →https://doi.org/10.1109/led.2017.2768099openalex-extracted
Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
inferredcites →https://doi.org/10.1109/led.2019.2909770openalex-extracted
A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications
inferredcites →https://doi.org/10.1109/led.2020.2985091openalex-extracted
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier
inferredcites →https://doi.org/10.1109/led.2021.3075926openalex-extracted
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
inferredcites →https://doi.org/10.1109/led.2021.3109054openalex-extracted
Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
inferredcites →https://doi.org/10.1109/led.2023.3262589openalex-extracted
Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity
inferredcites →https://doi.org/10.1109/pawr53092.2022.9719870openalex-extracted
Ultra-Linear and High-Efficiency GaN Technology for 5G and Beyond
inferredcites →https://doi.org/10.1109/ted.2005.862702openalex-extracted
Punch-through in short-channel AlGaN/GaN HFETs
inferredcites →https://doi.org/10.1109/ted.2006.887045openalex-extracted
DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs
inferredcites →https://doi.org/10.1109/ted.2007.904476openalex-extracted
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
inferredcites →https://doi.org/10.1109/ted.2011.2167334openalex-extracted
A Theoretical Calculation of the Impact of GaN Cap and $\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N}$ Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a $\hbox{GaN}/\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$ Heterostructure
inferredcites →https://doi.org/10.1109/ted.2017.2713784openalex-extracted
Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
inferredcites →https://doi.org/10.1109/ted.2020.3017136openalex-extracted
Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs
inferredcites →https://doi.org/10.1109/ted.2021.3050740openalex-extracted
Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications
inferredcites →https://doi.org/10.1109/ted.2023.3268626openalex-extracted
Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
inferredcites →https://doi.org/10.1109/tmtt.2019.2896047openalex-extracted
Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits
inferredcites →https://doi.org/10.3390/ma12101599openalex-extracted
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
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