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Electron-Hole Recombination in Germanium

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inferredcites →https://doi.org/10.1103/physrev.80.467.2openalex-snapshot
P−N Junctions Prepared by Impurity Diffusion

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TheASi–SiiDefect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review
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Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations
inferred← citeshttps://doi.org/10.1002/pssa.2210120110openalex-snapshot
Frequency response of Si–SiO2 interface states on thin oxide MOS capacitors
inferred← citeshttps://doi.org/10.1002/pssa.2210190207openalex-snapshot
Generation-recombination characteristic behavior of silicon diodes
inferred← citeshttps://doi.org/10.1002/pssa.2210250110openalex-snapshot
Determination of the capture ratecn of the gold acceptor level from single injection n+–i–n+ silicon SCLC diodes
inferred← citeshttps://doi.org/10.1002/pssa.2210280110openalex-snapshot
Calculation of the frequency dependence of the admittance of SCLC diodes
inferred← citeshttps://doi.org/10.1002/pssa.2210300114openalex-snapshot
Determination of the temperature independence of the capture cross-section of the gold acceptor level for electrons in n-type silicon
inferred← citeshttps://doi.org/10.1002/pssa.2210300207openalex-snapshot
New results of the transient behaviour of single injection sclc diodes with one deep level
inferred← citeshttps://doi.org/10.1002/pssa.2210370215openalex-snapshot
The influence of trapped space charge on the double-injection switching
inferred← citeshttps://doi.org/10.1002/pssa.2210440116openalex-snapshot
A regional approximation for a real p+–i–n+ double-injection structure by including both diffusion and space charge effects
inferred← citeshttps://doi.org/10.1002/pssa.2210440140openalex-snapshot
Recombination currents in a p–n heterojunction diode
inferred← citeshttps://doi.org/10.1002/pssa.2210640102openalex-snapshot
Twenty five years of semiconductor-grade silicon
inferred← citeshttps://doi.org/10.1002/pssa.2210690233openalex-snapshot
Double Injection at p–n Junctions Based on AlxGa1−xAs
inferred← citeshttps://doi.org/10.1002/pssa.2210830133openalex-snapshot
Charge-carrier recombination in silicon irradiated with γ-rays of different energies
inferred← citeshttps://doi.org/10.1002/pssa.2210860134openalex-snapshot
A model of nonequilibrium charge-carrier recombination in semiconductors containing nonuniformities
inferred← citeshttps://doi.org/10.1002/pssa.2210960219openalex-snapshot
The Charge Carrier Recombination Processes in Dislocated Silicon
inferred← citeshttps://doi.org/10.1002/pssa.2211130207openalex-snapshot
The role of dislocations during charge-carrier recombination at radiation defects in p-Si
inferred← citeshttps://doi.org/10.1002/pssa.2211170133openalex-snapshot
Injection Effects on Cathodoluminescence Experiments Dember Electric Field
inferred← citeshttps://doi.org/10.1002/pssa.2211200226openalex-snapshot
Iron-Related Deep States in Chemical Vapour Deposited Si
inferred← citeshttps://doi.org/10.1002/pssa.2211380145openalex-snapshot
Determination of the recombination current in schottky diodes from photovoltage measurements
inferred← citeshttps://doi.org/10.1002/pssa.2211460236openalex-snapshot
Photoconductive studies of carrier mobility across semiconductor surface depletion zones
inferred← citeshttps://doi.org/10.1002/pssa.2211580230openalex-snapshot
I—V Curve Shape Factor for Thin p—n Junctions at High Injection Levels
inferred← citeshttps://doi.org/10.1002/pssb.19610010703openalex-snapshot
Laser Conditions in Semiconductors
inferred← citeshttps://doi.org/10.1002/pssb.19660160116openalex-snapshot
Effect of Neutron and γ‐Ray Irradiation on the Carrier Lifetime and Detectivity of InSb
inferred← citeshttps://doi.org/10.1002/pssb.19660180130openalex-snapshot
Zur Anregungs–Rekombinationsstatistik in Halbleitern
inferred← citeshttps://doi.org/10.1002/pssb.19670190202openalex-snapshot
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)
inferred← citeshttps://doi.org/10.1002/pssb.19670210220openalex-snapshot
Carrier Recombination in Nickel Doped Germanium from Lifetime and Noise Measurements
inferred← citeshttps://doi.org/10.1002/pssb.200844076openalex-snapshot
Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation
inferred← citeshttps://doi.org/10.1002/pssb.200879544openalex-snapshot
The determination of charge‐carrier lifetime in silicon
inferred← citeshttps://doi.org/10.1002/pssb.201046157openalex-snapshot
Recombination activity of iron-boron pairs in compensated p-type silicon
inferred← citeshttps://doi.org/10.1002/pssb.201451582openalex-snapshot
Nonradiative centers in deep‐UV AlGaN‐based quantum wells revealed by two‐wavelength excited photoluminescence
inferred← citeshttps://doi.org/10.1002/pssb.201552141openalex-snapshot
Simplified method for the evaluation of the reverse dark current–voltage characteristic of thin film devices
inferred← citeshttps://doi.org/10.1002/pssb.201600363openalex-snapshot
Reassessment of the recombination properties of aluminium–oxygen complexes in n‐ and p‐type Czochralski‐grown silicon
inferred← citeshttps://doi.org/10.1002/pssb.201800082openalex-snapshot
Defect Parameters Contour Mapping: A Powerful Tool for Lifetime Spectroscopy Data Analysis
inferred← citeshttps://doi.org/10.1002/pssb.201900534openalex-snapshot
Deep‐Level Defects and Impurities in InGaN Alloys
inferred← citeshttps://doi.org/10.1002/pssb.202000298openalex-snapshot
Optical–Microwave Pump–Probe Studies of Electronic Properties in Novel Materials
inferred← citeshttps://doi.org/10.1002/pssb.202000370openalex-snapshot
Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence
inferred← citeshttps://doi.org/10.1002/pssb.202100549openalex-snapshot
Absorption and Photoluminescence of Silicon Nanocrystals Investigated by Excited State DFT: Role of Embedding Dielectric and Defects
inferred← citeshttps://doi.org/10.1002/pssb.202400581openalex-snapshot
Photo‐Gain Effect in κ‐Ga 2 O 3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes
inferred← citeshttps://doi.org/10.1002/pssb.2221330135openalex-snapshot
Photocarrier kinetics in IrBr‐doped AgBr
inferred← citeshttps://doi.org/10.1002/pssb.2221730218openalex-snapshot
Ti Deep‐Level Delta‐Doping in GaAs Schottky Diodes: Capacitance–Voltage Analysis
inferred← citeshttps://doi.org/10.1002/pssb.2221940110openalex-snapshot
Loss minimization through recombination center identification in solar cells
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