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https://doi.org/10.2139/ssrn.4653481
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Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.202100451openalex-extracted
Understanding the Origin of Thermal Annealing Effects in Low‐Temperature Amorphous Silicon Films and Solar Cells
inferredcites →https://doi.org/10.1002/pssc.200982698openalex-extracted
A recombination model for a‐Si:H/c‐Si heterostructures
inferredcites →https://doi.org/10.1002/pssr.202200356openalex-extracted
On the Kinetics of Light‐Induced Enhancement Effect in Silicon Heterojunction Solar Cells
inferredcites →https://doi.org/10.1007/s10854-020-05146-0openalex-extracted
The rapidly reversible processes of activation and deactivation in amorphous silicon heterojunction solar cell under extensive light soaking
inferredcites →https://doi.org/10.1016/b978-0-08-034724-0.50057-3openalex-extracted
Hydrogen in Crystalline Semiconductors
inferredcites →https://doi.org/10.1016/j.solmat.2017.06.023openalex-extracted
Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking
inferredcites →https://doi.org/10.1016/j.solmat.2022.112039openalex-extracted
On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second
inferredcites →https://doi.org/10.1038/s41560-022-01018-5openalex-extracted
Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells
inferredcites →https://doi.org/10.1038/s41560-023-01255-2openalex-extracted
Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers
inferredcites →https://doi.org/10.1063/1.2128047openalex-extracted
Characterization of a-Si:H∕c-Si interfaces by effective-lifetime measurements
inferredcites →https://doi.org/10.1063/1.350782openalex-extracted
Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface
inferredcites →https://doi.org/10.1063/1.3590254openalex-extracted
Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements
inferredcites →https://doi.org/10.1063/1.3700241openalex-extracted
Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon
inferredcites →https://doi.org/10.1063/1.4821235openalex-extracted
Light induced changes in the amorphous—crystalline silicon heterointerface
inferredcites →https://doi.org/10.1063/1.4886595openalex-extracted
On effective surface recombination parameters
inferredcites →https://doi.org/10.1063/1.4906465openalex-extracted
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
inferredcites →https://doi.org/10.1063/1.4994795openalex-extracted
Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing
inferredcites →https://doi.org/10.1080/09500839208229273openalex-extracted
Effects of dangling bonds on the recombination function in amorphous semiconductors
inferredcites →https://doi.org/10.1103/physrev.109.1103openalex-extracted
Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions
inferredcites →https://doi.org/10.1103/physrev.87.387openalex-extracted
Electron-Hole Recombination in Germanium
inferredcites →https://doi.org/10.1103/physrev.87.835openalex-extracted
Statistics of the Recombinations of Holes and Electrons
inferredcites →https://doi.org/10.1103/physrevb.53.10121openalex-extracted
Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon
inferredcites →https://doi.org/10.1103/physrevb.76.035326openalex-extracted
Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
inferredcites →https://doi.org/10.1109/jphotov.2016.2576685openalex-extracted
An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells
inferredcites →https://doi.org/10.1109/jphotov.2021.3065537openalex-extracted
Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures
inferredcites →https://doi.org/10.1109/pvsc.2008.4922850openalex-extracted
Stability of amorphous/crystalline silicon heterojunctions
inferredcites →https://doi.org/10.1109/pvsc.2010.5614387openalex-extracted
Explanation of the device operation principle of amorphous silicon/ crystalline silicon heterojunction solar cell and role of the inversion of crystalline silicon surface
inferredcites →https://doi.org/10.1557/proc-762-a19.11openalex-extracted
Photoelectron spectroscopic investigations of very thin a-Si:H layers
inferredcites →https://doi.org/10.3103/s0027134909050129openalex-extracted
The effect of illumination on dark conductivity and photoconductivity of hydrogenated amorphous silicon layered films
inferredcites →https://doi.org/10.35848/1882-0786/ac8784openalex-extracted
Intensive light soaking improves electricity generation of silicon heterojunction solar cells by the anomalous Staebler–Wronski effect
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