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Theory of the electronic structure of the Si-Si O2 interface
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-3093(76)90134-4openalex-snapshot
Investigation of the density of localized states in a-Si using the field effect technique
inferredcites →https://doi.org/10.1016/0022-3093(79)90075-9openalex-snapshot
The use of Cayley trees to study excitations in disordered solids
inferredcites →https://doi.org/10.1016/0038-1098(76)90194-0openalex-snapshot
Oxidation of silicon: New electron spectroscopy results
inferredcites →https://doi.org/10.1016/0038-1098(76)91221-7openalex-snapshot
The peroxy radical model for the chemisorption of O2 onto silicon surfaces
inferredcites →https://doi.org/10.1016/0039-6028(77)90398-3openalex-snapshot
Electronic states near the band gap for the GaAs(110) surface
inferredcites →https://doi.org/10.1016/0039-6028(78)90467-3openalex-snapshot
Impurity bands in inversion layers
inferredcites →https://doi.org/10.1016/0079-6816(77)90003-xopenalex-snapshot
Electronic states at the silicon-silicon dioxide interface
inferredcites →https://doi.org/10.1016/c2013-0-03046-0openalex-snapshot
The Physics of SiO2 and its Interfaces
inferredcites →https://doi.org/10.1080/00018736000101199openalex-snapshot
On the theory of cooperative phenomena in crystals
inferredcites →https://doi.org/10.1080/00018736700101265openalex-snapshot
Electrons in disordered structures
inferredcites →https://doi.org/10.1103/physrev.169.619openalex-snapshot
Transport Properties of Electrons in Inverted Silicon Surfaces
inferredcites →https://doi.org/10.1103/physrev.170.705openalex-snapshot
Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon
inferredcites →https://doi.org/10.1103/physrevb.10.710openalex-snapshot
Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxide
inferredcites →https://doi.org/10.1103/physrevb.12.4200openalex-snapshot
Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures
inferredcites →https://doi.org/10.1103/physrevb.15.3193openalex-snapshot
Electronic structure of Si O2 , SixGe1−xO2 , and Ge O2 from photoemission spectroscopy
inferredcites →https://doi.org/10.1103/physrevb.16.2764openalex-snapshot
Theory of fluctuations and localized states in amorphous tetrahedrally bounded solids
inferredcites →https://doi.org/10.1103/physrevb.18.6999openalex-snapshot
Theory of oxygen chemisorption on GaAs(110)
inferredcites →https://doi.org/10.1103/physrevb.19.3944openalex-snapshot
Electron-spectroscopic studies of the early stages of the oxidation of Si
inferredcites →https://doi.org/10.1103/physrevb.20.5228openalex-snapshot
Bulk electronic structure of Si O2
inferredcites →https://doi.org/10.1103/physrevb.4.3398openalex-snapshot
Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and Si
inferredcites →https://doi.org/10.1103/physrevb.8.5977openalex-snapshot
Chemical Bonding Effects in the Oxygen Kα X-Ray Emission Bands of Silica
inferredcites →https://doi.org/10.1103/physrevb.9.2762openalex-snapshot
Evidence for a mobility edge in inversion layers
inferredcites →https://doi.org/10.1103/physrevlett.28.1378openalex-snapshot
Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs
inferredcites →https://doi.org/10.1103/physrevlett.28.1381openalex-snapshot
Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
inferredcites →https://doi.org/10.1103/physrevlett.29.1088openalex-snapshot
X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence Bands
inferredcites →https://doi.org/10.1103/physrevlett.31.102openalex-snapshot
Surface-State Transitions of Silicon in Electron Energy-Loss Spectra
inferredcites →https://doi.org/10.1103/physrevlett.31.106openalex-snapshot
Surface States and Surface Bonds of Si(111)
inferredcites →https://doi.org/10.1103/physrevlett.32.1433openalex-snapshot
Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)
inferredcites →https://doi.org/10.1103/physrevlett.32.225openalex-snapshot
Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent Calculation
inferredcites →https://doi.org/10.1103/physrevlett.32.421openalex-snapshot
Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of Silicon
inferredcites →https://doi.org/10.1103/physrevlett.34.1385openalex-snapshot
Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed Surfaces
inferredcites →https://doi.org/10.1103/physrevlett.41.1062openalex-snapshot
Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces
inferredcites →https://doi.org/10.1116/1.569003openalex-snapshot
Field dependent internal photoemission probe of the electronic structure of the Si–SiO2 interface
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Optical Resonance in the Inversion Channel of a Silicon Mos Structure
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Radiation effects in SiO2/Si structures
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U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres
inferred← citeshttps://doi.org/10.1002/pssb.2221220135openalex-snapshot
Electronic Structure of an Unreconstructed (1010) α‐Quartz Surface
inferred← citeshttps://doi.org/10.1002/pssb.2221240256openalex-snapshot
Electronic Density of States of an SiSiO2 Interface witha Gradual Chemical Transition
inferred← citeshttps://doi.org/10.1002/pssb.2221250167openalex-snapshot
Bethe‐Lattice Approach to the Electronic Structure of Intrinsic Defects in v‐SiO2
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Transition Region Effect in the SiO2–SiOx–Si System on the Si Two‐Dimensional Electron Gas
inferred← citeshttps://doi.org/10.1002/pssb.2221360124openalex-snapshot
Theoretical Study of the Gradual Chemical Transition at the SiSiO2 Interface. II. Electronic Density of States Calculations
inferred← citeshttps://doi.org/10.1002/pssb.2221360241openalex-snapshot
Cluster‐Bethe‐Lattice Approach to the Electronic Structure of Intrinsic Defects in v‐SiO2
inferred← citeshttps://doi.org/10.1002/pssb.2221390110openalex-snapshot
A Contribution to the Theoretical Interpretation of the UPS Spectra of Monoatomic Adsorption of Oxygen on the Si (111) Surface
inferred← citeshttps://doi.org/10.1007/978-1-4613-1031-0_32openalex-snapshot
Theory of Dangling Orbital Defects at the <111> Si/SiO2 Interface
inferred← citeshttps://doi.org/10.1007/978-1-4899-0774-5_34openalex-snapshot
Electronic and Optical Properties of Silicon Dangling-Bond Defects at the Si-Sio2 Interface
inferred← citeshttps://doi.org/10.1007/978-1-4899-1334-0_24openalex-snapshot
A Self-consistent Model for the P b Centre at the (111)-Si/SiO2 Interface
inferred← citeshttps://doi.org/10.1007/978-1-4899-7699-4_11openalex-snapshot
Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
inferred← citeshttps://doi.org/10.1007/978-3-642-68247-6_1openalex-snapshot
Electronic Structure of the Si-SiO2 Interface
inferred← citeshttps://doi.org/10.1007/978-3-642-68247-6_42openalex-snapshot
Role of Interface States in Electron Scattering at Low Temperatures
inferred← citeshttps://doi.org/10.1007/978-3-642-83020-4_6openalex-snapshot
The Effects of Adsorption on the Electrophysical Parameters of Real Semiconductor Surfaces
inferred← citeshttps://doi.org/10.1007/978-94-010-0944-7_23openalex-snapshot
POINT DEFECTS IN Si-SiO2 SYSTEMS: CURRENT UNDERSTANDING
inferred← citeshttps://doi.org/10.1007/bfb0108604openalex-snapshot
Structure and electronic states in a-Si:H
inferred← citeshttps://doi.org/10.1007/s00214-016-1900-2openalex-snapshot
DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
inferred← citeshttps://doi.org/10.1007/s00339-006-3746-2openalex-snapshot
Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires
inferred← citeshttps://doi.org/10.1016/0038-1098(81)90580-9openalex-snapshot
Electronic structure of SiO2(111) thin film
inferred← citeshttps://doi.org/10.1016/0038-1098(81)91214-xopenalex-snapshot
ESR studies of thermally oxidized silicon wafers
inferred← citeshttps://doi.org/10.1016/0038-1098(84)90989-xopenalex-snapshot
Light-enhanced recombination of excess carriers at silicon surfaces
inferred← citeshttps://doi.org/10.1016/0038-1098(86)90823-9openalex-snapshot
Calculation of the optical properties of the isolated dangling bond in silicon
inferred← citeshttps://doi.org/10.1016/0038-1101(90)90236-8openalex-snapshot
Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2
inferred← citeshttps://doi.org/10.1016/0039-6028(83)90551-4openalex-snapshot
Interface states at the SiO2-Si interface
inferred← citeshttps://doi.org/10.1016/0039-6028(85)90900-8openalex-snapshot
Chemisorption of atomic and molecular oxygen on the (100) surface of silicon; a theoretical study
inferred← citeshttps://doi.org/10.1016/0039-6028(94)00769-1openalex-snapshot
Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases
inferred← citeshttps://doi.org/10.1016/0039-6028(96)00200-2openalex-snapshot
Interface states in the Si band-gap obtained from XPS measurements under biases
inferred← citeshttps://doi.org/10.1016/0042-207x(86)90224-1openalex-snapshot
Local density of states of the Si(111) surface with vacancies and its reconstruction
inferred← citeshttps://doi.org/10.1016/0079-6816(83)90006-0openalex-snapshot
Characterization of Si/SiO2 interface defects by electron spin resonance
inferred← citeshttps://doi.org/10.1016/0169-4332(89)90087-1openalex-snapshot
Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors
inferred← citeshttps://doi.org/10.1016/0250-6874(87)80011-2openalex-snapshot
Admittance studies of hydrogen-induced states at the silicon—silicon dioxide interface
inferred← citeshttps://doi.org/10.1016/0304-3991(87)90053-2openalex-snapshot
Local bonding and electronic structure obtained from electron energy loss scattering
inferred← citeshttps://doi.org/10.1016/0378-5963(81)90126-4openalex-snapshot
Structures chimique et electronique de l'interface SiO2-Si
inferred← citeshttps://doi.org/10.1016/b978-0-12-234110-6.50007-7openalex-snapshot
Characterization of the Si-SiO2 Interface
inferred← citeshttps://doi.org/10.1016/b978-0-444-86784-1.50033-xopenalex-snapshot
INTERFACE STATES AT THE SiO2–Si INTERFACE
inferred← citeshttps://doi.org/10.1016/b978-012513910-6/50009-8openalex-snapshot
THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES
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Electronic structure of Cr impurity in Al2O3 from first-principle calculation
inferred← citeshttps://doi.org/10.1016/j.physb.2022.414018openalex-snapshot
Optical resonance in the inversion n− channel of a silicon MOS structure
inferred← citeshttps://doi.org/10.1016/j.susc.2007.04.244openalex-snapshot
Near infrared absorption of Si nanoparticles embedded in silica films
inferred← citeshttps://doi.org/10.1016/s0022-3093(87)80033-9openalex-snapshot
Structural phase transition in SiO
inferred← citeshttps://doi.org/10.1016/s0022-3093(99)00533-5openalex-snapshot
Electron structure of amorphous SiO2 under strong electric field using DV-Xα
inferred← citeshttps://doi.org/10.1016/s0026-2714(98)00205-4openalex-snapshot
Recent advances in the theory of oxide–semiconductor interfaces
inferred← citeshttps://doi.org/10.1016/s0038-1101(99)00257-9openalex-snapshot
Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
inferred← citeshttps://doi.org/10.1016/s0080-8784(08)63073-2openalex-snapshot
Chapter 9 Electronic Properties of Surfaces in a-Si: H
inferred← citeshttps://doi.org/10.1016/s0169-4332(00)00472-4openalex-snapshot
Detection of interface states correlated with SiO2/Si(111) interface structures
inferred← citeshttps://doi.org/10.1016/s0169-4332(96)00689-7openalex-snapshot
A new method for the growth of silicon oxide layers below 300°C by use of catalytic activity of platinum overlayers
inferred← citeshttps://doi.org/10.1063/1.102472openalex-snapshot
Study of Si/SiO2 interface by transverse acoustoelectric voltage measurements
inferred← citeshttps://doi.org/10.1063/1.1337634openalex-snapshot
SiC/SiO 2 interface states observed by x-ray photoelectron spectroscopy measurements under bias
inferred← citeshttps://doi.org/10.1063/1.2354436openalex-snapshot
Interface states for HfO2∕Si structure observed by x-ray photoelectron spectroscopy measurements under bias
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Carrier capture at the SiO2–Si interface: A physical model
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Theory of continuously distributed trap states at Si-SiO2 interfaces
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Complete collection of minority carriers from the inversion layer in induced junction diodes
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The near ultraviolet quantum yield of silicon
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An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface
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Electric field induced effects at the Si–SiO2 interface: Theory and experiment
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Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime
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Recombination of carriers at n-Si/SiO2 interface via mobile centers in the oxide
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Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
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Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates
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Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure
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Spectroscopic observation of interface states of ultrathin silicon oxide
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On the “U-shaped” continuum of band edge states at the Si/SiO2 interface
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Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment
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The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures
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The origin and nature of silicon band-gap states at the Si/SiO2 interface
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Defects and impurities in thermal oxides on silicon
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Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface
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Characteristic electronic defects at the Si-SiO2 interface
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Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures
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Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors using molecular beam epitaxy of CaF2 on Si
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Nature of the E′ deep hole trap in metal-oxide-semiconductor oxides
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Electronic structure of amorphous semiconductors
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Chemical Structures of the SiO2Si Interface
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The electronic and atomic structure of hydrogenated amorphous Si—C alloys
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Nonlinear optical spectroscopy at silicon interfaces
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Pressure dependence of the Pbcentre measured by voltage transient spectroscopy
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Theoretical study of the electronic structure of SiOx
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Evidence for a magnetic-field-induced Wigner glass in the two-dimensional electron system in Si inversion layers
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Surface electronic structure of silicon dioxide
inferred← citeshttps://doi.org/10.1103/physrevb.25.6511openalex-snapshot
Possibility of intrinsic Si gap states localized at the Si-Si O2 interface
inferred← citeshttps://doi.org/10.1103/physrevb.26.5716openalex-snapshot
Interpretation of the spectra obtained from oxygen-adsorbed and oxidized silicon surfaces
inferred← citeshttps://doi.org/10.1103/physrevb.27.3780openalex-snapshot
Theory of defects in vitreous silicon dioxide
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Electronic structure of α -alumina and its defect states
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Electronic structure of crystalline and amorphous silicon dioxide
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Model of electronic states at the Si- SiO2 interface
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Effects of electron-electron correlations on defect and interface states in amorphous Si and SiO2 systems
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Theory of the Pb center at the <111> Si/ SiO2 interface
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Pressure dependence of the Pb center at the 〈111〉 Si/Si O2 interface
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Atomic and electronic structures of an interface between silicon and β-cristobalite
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Model for the Pb center at the (111) Si/ SiO2 interface
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Model for the emission of Si+ ions during oxygen bombardment of Si(100) surfaces
inferred← citeshttps://doi.org/10.1103/physrevb.51.4218openalex-snapshot
Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si- SiO 2 interface
inferred← citeshttps://doi.org/10.1103/physrevb.69.155329openalex-snapshot
First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces
inferred← citeshttps://doi.org/10.1103/physrevb.82.245314openalex-snapshot
Extended interface states enhance valley splitting in Si/SiO2
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Identification of strained silicon layers at Si- SiO2 interfaces and clean Si surfaces by nonlinear optical spectroscopy
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Electronic properties of two-dimensional systems
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Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps
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Interfacial GaOx in $\text{Al}_{2}\mathrm{O}_{3}/n-\text{GaN}$ MOS Structures Studied by Quasi-Static CV and ToF-SIMS
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Characterization of generation currents in solid-state imagers
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The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs
inferred← citeshttps://doi.org/10.1109/tns.1981.4335683openalex-snapshot
Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures
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The Nature of the Deep Hole Trap in MOS Oxides
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New direct spectroscopic method for determination of the energy distribution of interface states
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Extended fine structure of auger spectra of thermally oxidized silicon surface
inferred← citeshttps://doi.org/10.1143/jjap.21.1684openalex-snapshot
Effects of Silicon-Nitride Films on the Electronic Properties of Si–SiO2 Interfaces
inferred← citeshttps://doi.org/10.1143/jjap.34.959openalex-snapshot
Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer: X-Ray Photoelectron Spectroscopic Measurements under Biases
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Elimination of interface recombination in oxide passivated silicon p^+n photodiodes by storage of negative charge on the oxide surface
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Photodiode quantum efficiency enhancement at 365 nm: optical and electrical
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Formation, Atomic Structures, and Physical Properties of Si-SiO2 System
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Electron states at the Si-SiO2 boundary (Review)
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Electron Paramagnetic Resonance of Material Properties and Processes
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The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures
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Passivation of Defect States in Amorphous and Crystalline Si by use of Cyanide Treatment and Improvement of Solar Cell Characteristics
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High frequency techniques for advanced MOS device characterization
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