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Optical Resonance in the Inversion Channel of a Silicon Mos Structure

https://doi.org/10.2139/ssrn.3975299
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.physb.2019.411710openalex-extracted
Coherent bleaching of the medium with Raman scattering under conditions of strong size quantization
inferredcites →https://doi.org/10.1070/pu1975v017n05abeh004365openalex-extracted
Self-induced transparency effect
inferredcites →https://doi.org/10.1088/0031-9112/26/12/039openalex-extracted
Optical Resonance and Two Level Atoms
inferredcites →https://doi.org/10.1103/physrevb.13.3468openalex-extracted
Density-functional calculation of sub-band structure in accumulation and inversion layers
inferredcites →https://doi.org/10.1103/physrevb.15.3947openalex-extracted
Many-body effects in n -type Si inversion layers. II. Excitations to higher subbands
inferredcites →https://doi.org/10.1103/physrevb.21.5733openalex-extracted
Theory of the electronic structure of the Si-Si O2 interface
inferredcites →https://doi.org/10.1103/revmodphys.54.437openalex-extracted
Electronic properties of two-dimensional systems
inferredcites →https://doi.org/10.3103/s1068337219030071openalex-extracted
Effect of Self-Induced Transparency in a Massive of Spherical Quantum Dots Under the Conditions of Strong Dimensional Quantization
inferredcites →https://doi.org/10.3367/ufne.2018.10.038449openalex-extracted
Two-dimensional system of strongly interacting electrons in silicon (100) structures
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