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Hole emission processes in InAs/GaAs self-assembled quantum dots

https://doi.org/10.1103/physrevb.66.195337

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

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Electron and hole energy levels in InAs self-assembled quantum dots

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Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

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Electronic structure of self-assembled InAs quantum dots in GaAs matrix

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The dynamics of tunneling into self-assembled InAs dots

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Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

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Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure

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Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

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Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

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Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy

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Tunneling carrier escape from InAs self-assembled quantum dots

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Quantum-dot infrared photodetector with lateral carrier transport

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Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

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Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

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Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots

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Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory

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Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots

inferredcites →https://doi.org/10.1103/physrevb.60.r2189openalex-snapshot

Electron-filling modulation reflectance in charged self-assembled InxGa1−xAs quantum dots

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Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

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Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots

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Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

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Charging of embedded InAs self-assembled quantum dots by space-charge techniques

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Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots

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