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Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

https://doi.org/10.1021/acsnano.9b09715
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.optlastec.2018.11.048openalex-snapshot
2 Tb/s all-optical gates based on two-photon absorption in quantum dot semiconductor optical amplifiers
inferredcites →https://doi.org/10.1016/j.physe.2007.08.138openalex-snapshot
Intense photoluminescence from highly stacked quantum dash structure fabricated by strain-compensation technique
inferredcites →https://doi.org/10.1016/j.pquantelec.2014.11.001openalex-snapshot
Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
inferredcites →https://doi.org/10.1016/s0022-0248(02)02371-0openalex-snapshot
Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
inferredcites →https://doi.org/10.1016/s1369-7021(11)70183-3openalex-snapshot
Quantum dots: promises and accomplishments
inferredcites →https://doi.org/10.1016/s1386-9477(02)00374-0openalex-snapshot
Quantum dot solar cells
inferredcites →https://doi.org/10.1021/acsphotonics.8b01341openalex-snapshot
Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers
inferredcites →https://doi.org/10.1021/acsphotonics.8b01707openalex-snapshot
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate
inferredcites →https://doi.org/10.1021/acsphotonics.9b00903openalex-snapshot
High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate
inferredcites →https://doi.org/10.1021/acsphotonics.9b01709openalex-snapshot
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
inferredcites →https://doi.org/10.1021/ph500162aopenalex-snapshot
InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
inferredcites →https://doi.org/10.1038/nphoton.2010.157openalex-snapshot
High-performance Ge-on-Si photodetectors
inferredcites →https://doi.org/10.1038/nphoton.2016.21openalex-snapshot
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
inferredcites →https://doi.org/10.1049/el:19860617openalex-snapshot
High-speed zero-bias waveguide photodetectors
inferredcites →https://doi.org/10.1063/1.122399openalex-snapshot
High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
inferredcites →https://doi.org/10.1063/1.1339210openalex-snapshot
Quantum dot solar cells
inferredcites →https://doi.org/10.1063/1.2357916openalex-snapshot
High-performance 1.55μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector
inferredcites →https://doi.org/10.1063/1.2898895openalex-snapshot
1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
inferredcites →https://doi.org/10.1063/1.3592569openalex-snapshot
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
inferredcites →https://doi.org/10.1063/1.4740275openalex-snapshot
Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5multiple quantum well photodiode
inferredcites →https://doi.org/10.1063/1.4952600openalex-snapshot
Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
inferredcites →https://doi.org/10.1063/1.4953147openalex-snapshot
Dark current analysis in high-speed germanium p-i-n waveguide photodetectors
inferredcites →https://doi.org/10.1063/1.4993226openalex-snapshot
High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si
inferredcites →https://doi.org/10.1063/1.5021345openalex-snapshot
Perspective: The future of quantum dot photonic integrated circuits
inferredcites →https://doi.org/10.1063/1.5031772openalex-snapshot
Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.5041908openalex-snapshot
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
inferredcites →https://doi.org/10.1088/0022-3727/38/13/004openalex-snapshot
InP based lasers and optical amplifiers with wire-/dot-like active regions
inferredcites →https://doi.org/10.1088/0022-3727/46/31/315103openalex-snapshot
Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells
inferredcites →https://doi.org/10.1103/physrevb.66.195337openalex-snapshot
Hole emission processes in InAs/GaAs self-assembled quantum dots
inferredcites →https://doi.org/10.1109/16.333840openalex-snapshot
Low-frequency noise spectroscopy
inferredcites →https://doi.org/10.1109/3.83412openalex-snapshot
Resonant cavity-enhanced (RCE) photodetectors
inferredcites →https://doi.org/10.1109/jlt.2017.2772894openalex-snapshot
Multi-band CAP for Next-Generation Optical Access Networks Using 10-G Optics
inferredcites →https://doi.org/10.1109/jphot.2010.2046151openalex-snapshot
InP/InGaAs Photodetector on SOI Photonic Circuitry
inferredcites →https://doi.org/10.1109/jphot.2016.2611444openalex-snapshot
Pulse Laser Sulfur-Hyperdoping of Germanium and High Quantum Efficiency Photodiodes
inferredcites →https://doi.org/10.1109/jqe.2016.2608800openalex-snapshot
Amplitude and Phase Noise of Frequency Combs Generated by Single-Section InAs/InP Quantum-Dash-Based Passively and Actively Mode-Locked Lasers
inferredcites →https://doi.org/10.1109/jstqe.2008.919277openalex-snapshot
Quantum Dashes on InP Substrate for Broadband Emitter Applications
inferredcites →https://doi.org/10.1109/jstqe.2017.2699787openalex-snapshot
Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications
inferredcites →https://doi.org/10.1109/lpt.2014.2321500openalex-snapshot
Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices
inferredcites →https://doi.org/10.1109/lpt.2019.2926785openalex-snapshot
InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength
inferredcites →https://doi.org/10.1364/oe.20.008718openalex-snapshot
Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping
inferredcites →https://doi.org/10.1364/oe.23.027213openalex-snapshot
High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode
inferredcites →https://doi.org/10.1364/oe.24.027738openalex-snapshot
Responsivity optimization of a high-speed germanium-on-silicon photodetector
inferredcites →https://doi.org/10.1364/oe.25.027715openalex-snapshot
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
inferredcites →https://doi.org/10.1364/oe.27.002681openalex-snapshot
High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)
inferredcites →https://doi.org/10.1364/oe.27.005798openalex-snapshot
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
inferredcites →https://doi.org/10.1364/oe.27.037065openalex-snapshot
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy
inferredcites →https://doi.org/10.1364/ofc.2018.w3f.3openalex-snapshot
High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C
inferredcites →https://doi.org/10.1364/ol.41.001664openalex-snapshot
Optically pumped 13 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
inferredcites →https://doi.org/10.1364/optica.4.000940openalex-snapshot
13 μm submilliamp threshold quantum dot micro-lasers on Si
inferredcites →https://doi.org/10.1364/optica.6.000884openalex-snapshot
High-speed uni-traveling carrier photodiode for 2 μm wavelength application
inferredcites →https://doi.org/10.1364/optica.6.001277openalex-snapshot
Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon
inferredcites →https://doi.org/10.4218/etrij.05.0905.0023openalex-snapshot
Fabrication of 40 Gb/s Front-End Optical Receivers Using Spot-Size Converter Integrated Waveguide Photodiodes

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4122875openalex-extracted
The Depth Investigation on the Formation of Strain Reduced In0.54al0.34ga0.12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers
inferred← citeshttps://doi.org/10.1002/adom.202500115openalex-snapshot
Ultra‐High‐Speed Dilute Nitride Photodetectors on GaAs Substrate for 1310 nm Operation
inferred← citeshttps://doi.org/10.1002/adom.202502859openalex-snapshot
Recent Advances in Colloidal Quantum Dots‐Based Shortwave Infrared Photodetectors
inferred← citeshttps://doi.org/10.1016/b978-0-08-102795-0.00005-0openalex-snapshot
High-speed InAs quantum dot photodetectors for data/telecom
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.170617openalex-snapshot
Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources
inferred← citeshttps://doi.org/10.1016/j.rio.2022.100324openalex-snapshot
Symmetric photodetector integrated with multilayer dielectric resonator cavity for 400 Gb/s optical communication system
inferred← citeshttps://doi.org/10.1021/acsphotonics.1c00707openalex-snapshot
Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits
inferred← citeshttps://doi.org/10.1063/5.0045485openalex-snapshot
Telecom InP-based quantum dash photodetectors grown on Si
inferred← citeshttps://doi.org/10.1063/5.0103018openalex-snapshot
High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate
inferred← citeshttps://doi.org/10.1063/5.0196228openalex-snapshot
Regulating the bipolar response of InAs nanowire photodetector and waveguide integration
inferred← citeshttps://doi.org/10.1063/5.0301876openalex-snapshot
Monolithic integration of metalens on III–V photodetectors for enhanced sensing
inferred← citeshttps://doi.org/10.1063/5.0309982openalex-snapshot
Reduced dark current InAs/GaAs quantum dot photodetectors on Si(001) via spatially separated co-doping
inferred← citeshttps://doi.org/10.1109/jlt.2022.3225464openalex-snapshot
High-Speed Waveguide-Integrated Avalanche Photodiodes for Near-Infrared Wavelengths on SiN-on-SOI Photonic Platform
inferred← citeshttps://doi.org/10.1109/mnano.2020.3048094openalex-snapshot
Quantum Dot Lasers and Amplifiers on Silicon: Recent Advances and Future Developments
inferred← citeshttps://doi.org/10.1109/ted.2022.3212971openalex-snapshot
Vertical MoTe₂/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection
inferred← citeshttps://doi.org/10.1134/s1063782623050093openalex-snapshot
Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots
inferred← citeshttps://doi.org/10.1186/s11671-023-03810-yopenalex-snapshot
Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission
inferred← citeshttps://doi.org/10.1364/oe.395796openalex-snapshot
Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
inferred← citeshttps://doi.org/10.1364/oe.441693openalex-snapshot
Frequency response and carrier escape time of InGaAs quantum well-dots photodiode
inferred← citeshttps://doi.org/10.1364/prj.487509openalex-snapshot
All-in-one photoelectric logic gates by Dember photodetectors
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