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A new and simple model for GaAs heterojunction FET gate characteristics

https://doi.org/10.1109/16.2499
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/b978-0-08-011651-8.50006-4openalex-snapshot
Physics of Semiconductor Devices
inferredcites →https://doi.org/10.1016/s0080-8784(08)63007-0openalex-snapshot
Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor Contacts
inferredcites →https://doi.org/10.1049/el:19860152openalex-snapshot
Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
inferredcites →https://doi.org/10.1063/1.336070openalex-snapshot
GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications
inferredcites →https://doi.org/10.1063/1.91172openalex-snapshot
Negative differential resistance through real-space electron transfer
inferredcites →https://doi.org/10.1063/1.93771openalex-snapshot
Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures
inferredcites →https://doi.org/10.1063/1.94739openalex-snapshot
Hot electrons in modulation-doped GaAs-AlGaAs heterostructures
inferredcites →https://doi.org/10.1103/physrevb.30.840openalex-snapshot
Electron energy levels in GaAs- Ga1−xAlxAs heterojunctions
inferredcites →https://doi.org/10.1109/edl.1982.25593openalex-snapshot
Model for modulation doped field effect transistor
inferredcites →https://doi.org/10.1109/edl.1986.26300openalex-snapshot
New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation
inferredcites →https://doi.org/10.1109/edl.1986.26458openalex-snapshot
New mechanism of gate current in heterostructure insulated gate field-effect transistors
inferredcites →https://doi.org/10.1109/t-ed.1982.20813openalex-snapshot
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
inferredcites →https://doi.org/10.1109/t-ed.1985.22067openalex-snapshot
Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics
inferredcites →https://doi.org/10.1109/t-ed.1986.22530openalex-snapshot
Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Failure Mechanisms of GaAs MESFETs and Low-Noise HEMTs
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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes
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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap
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DC and noise performance of C-HFET transistors at low drain current densities
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Pressure induced Γ−Γ to Γ-X tunneling crossover in heterostructures
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A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits
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Enhanced heterostructure field effect transistor CAD model suitable for simulation of mixed mode circuits
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A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures
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The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT
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Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure
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The epHEMT gate at microwave frequencies
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Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions
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Fabrication and Characterization of GaN-based Vacuum Ultraviolet Schottky Detector with Argon-implanted Edge Termination
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SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES
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