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https://doi.org/10.2139/ssrn.4633423

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.apsusc.2017.01.032openalex-extracted
Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing
inferredcites →https://doi.org/10.1016/j.sse.2004.05.026openalex-extracted
Post-annealing effects on device performance of AlGaN/GaN HFETs
inferredcites →https://doi.org/10.1063/1.126940openalex-extracted
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
inferredcites →https://doi.org/10.1063/1.1850600openalex-extracted
On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface
inferredcites →https://doi.org/10.1063/1.3569138openalex-extracted
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
inferredcites →https://doi.org/10.1063/1.3643139openalex-extracted
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
inferredcites →https://doi.org/10.1063/1.369664openalex-extracted
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
inferredcites →https://doi.org/10.1063/1.371866openalex-extracted
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
inferredcites →https://doi.org/10.1063/1.4824445openalex-extracted
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
inferredcites →https://doi.org/10.1063/1.4891258openalex-extracted
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
inferredcites →https://doi.org/10.1088/1361-6641/ac05dfopenalex-extracted
DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation
inferredcites →https://doi.org/10.1109/16.2499openalex-extracted
A new and simple model for GaAs heterojunction FET gate characteristics
inferredcites →https://doi.org/10.1109/edl.1983.25748openalex-extracted
A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements
inferredcites →https://doi.org/10.1109/iedm.2006.346935openalex-extracted
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
inferredcites →https://doi.org/10.1109/jproc.2007.911060openalex-extracted
GaN-Based RF Power Devices and Amplifiers
inferredcites →https://doi.org/10.1109/led.2010.2072771openalex-extracted
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
inferredcites →https://doi.org/10.1109/led.2010.2095494openalex-extracted
Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio
inferredcites →https://doi.org/10.1109/led.2012.2207367openalex-extracted
1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
inferredcites →https://doi.org/10.1109/led.2014.2360541openalex-extracted
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio
inferredcites →https://doi.org/10.1109/led.2017.2720719openalex-extracted
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
inferredcites →https://doi.org/10.1109/led.2022.3163885openalex-extracted
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure
inferredcites →https://doi.org/10.1109/ted.2017.2654262openalex-extracted
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
inferredcites →https://doi.org/10.1109/ted.2020.2992014openalex-extracted
Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing
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