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Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

https://doi.org/10.1109/icsict.2018.8564875

0 signed · 7 inferred · view as graph

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.4978690openalex-snapshot

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

inferredcites →https://doi.org/10.1109/led.2005.851122openalex-snapshot

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

inferredcites →https://doi.org/10.1109/ted.2007.908601openalex-snapshot

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

inferredcites →https://doi.org/10.1109/ted.2008.924437openalex-snapshot

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

inferredcites →https://doi.org/10.1109/ted.2014.2381292openalex-snapshot

Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4649906openalex-extracted

inferred← citeshttps://doi.org/10.1016/j.rinp.2024.107526openalex-snapshot

Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems

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