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Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

https://doi.org/10.1109/led.2010.2072771

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.1484551openalex-snapshot

GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design

inferredcites →https://doi.org/10.1063/1.2911748openalex-snapshot

Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions

inferredcites →https://doi.org/10.1063/1.345572openalex-snapshot

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inferredcites →https://doi.org/10.1088/0022-3727/40/20/s16openalex-snapshot

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

inferredcites →https://doi.org/10.1109/55.962646openalex-snapshot

Power electronics on InAlN/(In)GaN: Prospect for a record performance

inferredcites →https://doi.org/10.1109/drc.2007.4373674openalex-snapshot

Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study

inferredcites →https://doi.org/10.1109/iedm.2006.346935openalex-snapshot

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

inferredcites →https://doi.org/10.1109/led.2006.881087openalex-snapshot

AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

inferredcites →https://doi.org/10.1109/led.2008.2005257openalex-snapshot

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

inferredcites →https://doi.org/10.1109/led.2008.923318openalex-snapshot

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

inferredcites →https://doi.org/10.1142/s0129156409006205openalex-snapshot

4-NM AlN BARRIER ALL BINARY HFET WITH SiN x GATE DIELECTRIC

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

inferred← citeshttps://doi.org/10.1109/ted.2014.2299810openalex-snapshot

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

inferred← citeshttps://doi.org/10.1109/ted.2014.2332235openalex-snapshot

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

inferred← citeshttps://doi.org/10.1109/ted.2019.2901719openalex-snapshot

Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

inferred← citeshttps://doi.org/10.1109/ted.2020.3034076openalex-snapshot

Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration

inferred← citeshttps://doi.org/10.1109/ted.2021.3084136openalex-snapshot

Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide

inferred← citeshttps://doi.org/10.1109/ted.2021.3131118openalex-snapshot

Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

inferred← citeshttps://doi.org/10.1109/ted.2021.3140016openalex-snapshot

Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

inferred← citeshttps://doi.org/10.1109/tns.2019.2908055openalex-snapshot

Neutron Irradiation Effects on the Electrical Properties of Previously Electrically Stressed AlInN/GaN HEMTs

inferred← citeshttps://doi.org/10.1109/vlsidcs47293.2020.9179897openalex-snapshot

Impact of Graded Back-Barrier on Linearity of Recessed Gate InAlN/GaN HEMT

inferred← citeshttps://doi.org/10.1109/wipda-asia63772.2025.11184054openalex-snapshot

Investigation of Electrical Property and Reliability in AlGaN/GaN MIS-HEMTs Fabricated by Using N 2 /O 2 Composite Plasma Treatment

inferred← citeshttps://doi.org/10.1116/6.0000126openalex-snapshot

Atomic-layer etching of GaN by using an HBr neutral beam

inferred← citeshttps://doi.org/10.1116/6.0000867openalex-snapshot

Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

inferred← citeshttps://doi.org/10.1117/12.2507398openalex-snapshot

Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

inferred← citeshttps://doi.org/10.1134/s1063783424600766openalex-snapshot

Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor

inferred← citeshttps://doi.org/10.1142/s0129156411006891openalex-snapshot

FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION

inferred← citeshttps://doi.org/10.1142/s1793604717500369openalex-snapshot

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

inferred← citeshttps://doi.org/10.1143/apex.4.064106openalex-snapshot

Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

inferred← citeshttps://doi.org/10.1143/apex.4.096502openalex-snapshot

Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

inferred← citeshttps://doi.org/10.1143/apex.4.114101openalex-snapshot

Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

inferred← citeshttps://doi.org/10.1143/apex.4.124101openalex-snapshot

Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

inferred← citeshttps://doi.org/10.1143/jjap.51.04df02openalex-snapshot

Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

inferred← citeshttps://doi.org/10.1149/2162-8777/ac8575openalex-snapshot

Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer

inferred← citeshttps://doi.org/10.1587/elex.16.20181046openalex-snapshot

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

inferred← citeshttps://doi.org/10.23919/ispsd62843.2025.11117462openalex-snapshot

High-Performance InAlN/GaN HEMTs and Monolithically Integrated Inverters enabled by InAlOxN1-x Plasma-Induced-Oxidation Charge Trapping Layer

inferred← citeshttps://doi.org/10.3390/cryst12050722openalex-snapshot

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

inferred← citeshttps://doi.org/10.3390/cryst12111521openalex-snapshot

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

inferred← citeshttps://doi.org/10.3390/electronics8101164openalex-snapshot

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

inferred← citeshttps://doi.org/10.3390/s18092795openalex-snapshot

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

inferred← citeshttps://doi.org/10.35848/1882-0786/ac32a6openalex-snapshot

Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching

inferred← citeshttps://doi.org/10.70675/5e075522zb8e9z49efz92bfz06864adbb52dopenalex-snapshot

Hétérostructures AlGaN/GaN et InAlN/GaN pour la réalisation de HEMTs de puissance hyperfréquence en bande Ka

inferred← citeshttps://doi.org/10.70675/aec4d0dezf73dz4f8cz98f7z6eb97f6e0b45openalex-snapshot

Fonction normally-on, normally-off compatible de la technologie HEMT GaN pour des applications de puissance, hyperfréquences

inferred← citeshttps://doi.org/10.7567/apex.7.104101openalex-snapshot

Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon

inferred← citeshttps://doi.org/10.7567/apex.8.101001openalex-snapshot

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

inferred← citeshttps://doi.org/10.7567/jjap.52.111001openalex-snapshot

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

inferred← citeshttps://doi.org/10.7567/jjap.54.04df09openalex-snapshot

Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

inferred← citeshttps://doi.org/10.7567/jjap.55.05fk03openalex-snapshot

Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

inferred← citeshttps://doi.org/10.7567/jjap.57.04fg05openalex-snapshot

An “ohmic-first” self-terminating gate-recess technique for normally-off Al 2 O 3 /GaN MOSFET

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