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RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure

https://doi.org/10.1109/led.2021.3087785

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.1626258openalex-snapshot

Electron drift velocity in AlGaN/GaN channel at high electric fields

inferredcites →https://doi.org/10.1063/1.5024484openalex-snapshot

GaN-on-Silicon – Present capabilities and future directions

inferredcites →https://doi.org/10.1109/16.3339openalex-snapshot

Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs

inferredcites →https://doi.org/10.1109/iedm19573.2019.8993582openalex-snapshot

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

inferredcites →https://doi.org/10.1109/jproc.2007.911060openalex-snapshot

GaN-Based RF Power Devices and Amplifiers

inferredcites →https://doi.org/10.1109/led.2005.843218openalex-snapshot

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

inferredcites →https://doi.org/10.1109/led.2012.2185921openalex-snapshot

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

inferredcites →https://doi.org/10.1109/led.2012.2187169openalex-snapshot

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

inferredcites →https://doi.org/10.1109/led.2012.2236638openalex-snapshot

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation

inferredcites →https://doi.org/10.1109/led.2017.2771354openalex-snapshot

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

inferredcites →https://doi.org/10.1109/mwsym.2019.8700845openalex-snapshot

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

inferredcites →https://doi.org/10.1109/ted.2005.856180openalex-snapshot

Influence of the Dynamic Access Resistance in the $g_m$ and $f_T$ Linearity of AlGaN/GaN HEMTs

inferredcites →https://doi.org/10.1109/ted.2005.863767openalex-snapshot

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

inferredcites →https://doi.org/10.1109/ted.2017.2657579openalex-snapshot

GaN-on-Si Power Technology: Devices and Applications

inferredcites →https://doi.org/10.1109/ted.2018.2831246openalex-snapshot

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

inferredcites →https://doi.org/10.1109/tmtt.2012.2187535openalex-snapshot

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

inferredcites →https://doi.org/10.7567/jjap.53.100212openalex-snapshot

GaN high electron mobility transistors for sub-millimeter wave applications

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4771817openalex-extracted

Rf Linearity and Improved GM of Scaln/Gan Hemt with Novel Inverse L-Shaped Gate Structure

inferred← citeshttps://doi.org/10.1007/978-981-97-7506-4_5openalex-snapshot

Large Signal Modelling of GaN HEMTs

inferred← citeshttps://doi.org/10.1007/s11432-022-3720-9openalex-snapshot

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

inferred← citeshttps://doi.org/10.1007/s11432-025-4904-9openalex-snapshot

Role of thick AlN insertion layer in modulating the electronic and thermal characteristics of AlGaN/GaN/AlN/Graded-AlGaN/GaN double-channel HEMTs

inferred← citeshttps://doi.org/10.1007/s11664-022-10109-8openalex-snapshot

Analysis of InGaN Back-Barrier on Linearity and RF Performance in a Graded-Channel HEMT

inferred← citeshttps://doi.org/10.1007/s11664-024-11664-yopenalex-snapshot

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

inferred← citeshttps://doi.org/10.1007/s11664-025-12226-6openalex-snapshot

Improved Graded Barrier/Buffer Double-Channel GaN HEMT for High-Power RF Applications

inferred← citeshttps://doi.org/10.1016/j.fmre.2023.11.005openalex-snapshot

A review of GaN RF devices and power amplifiers for 5G communication applications

inferred← citeshttps://doi.org/10.1016/j.jsamd.2024.100795openalex-snapshot

LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications

inferred← citeshttps://doi.org/10.1016/j.mejo.2024.106394openalex-snapshot

DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate

inferred← citeshttps://doi.org/10.1016/j.mejo.2024.106461openalex-snapshot

NPDC structure double-channel N-polar E-mode GaN HEMTs: Innovations in enhancing RF and DC performance and mitigating trap effects

inferred← citeshttps://doi.org/10.1016/j.micrna.2023.207545openalex-snapshot

A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

inferred← citeshttps://doi.org/10.1016/j.micrna.2025.208397openalex-snapshot

Investigating the impact of gate side wall on DC and RF performance in enhancement mode Triple Barrier Dual Spacer Dual Channel MIS-HEMT device

inferred← citeshttps://doi.org/10.1016/j.mseb.2025.118514openalex-snapshot

Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β -Ga 2 O 3 substrate for RF applications

inferred← citeshttps://doi.org/10.1016/j.mseb.2026.119843openalex-snapshot

Suppression of short-channel effects in enhancement-mode GaN HEMTs utilizing graded-AlGaN barrier and lattice-matched quaternary InAlGaN back-barrier

inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109340openalex-snapshot

Studies on the doping mechanism and strain state effect of AlGaN/GaN double channel heterostructures with Si-doped barrier

inferred← citeshttps://doi.org/10.1016/j.rinp.2024.107797openalex-snapshot

RF linearity and improved transconductance of ScAlN/GaN HEMT with novel inverse L-shaped gate structure

inferred← citeshttps://doi.org/10.1016/j.sse.2025.109127openalex-snapshot

Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications

inferred← citeshttps://doi.org/10.1063/5.0086957openalex-snapshot

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

inferred← citeshttps://doi.org/10.1063/5.0096542openalex-snapshot

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

inferred← citeshttps://doi.org/10.1063/5.0172376openalex-snapshot

Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

inferred← citeshttps://doi.org/10.1063/5.0344361openalex-snapshot

Design of DC gate electric field redistribution under high drain voltage for high linearity, wide gain control range, and low C off in GaN dual-mode integrated devices

inferred← citeshttps://doi.org/10.1088/1361-6463/ae4ab8openalex-snapshot

Linearity enhancement of AlGaN/GaN/graded-Al 0.1–0.25 GaN: Si-doped/GaN double channel HEMT

inferred← citeshttps://doi.org/10.1088/1361-6641/ac86ebopenalex-snapshot

Improvement of DC and f T performances of graded-channel HEMTs by polarization engineering

inferred← citeshttps://doi.org/10.1088/1361-6641/ad4a2dopenalex-snapshot

Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs

inferred← citeshttps://doi.org/10.1088/1361-6641/ad8eedopenalex-snapshot

A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs

inferred← citeshttps://doi.org/10.1088/1361-6641/adccf3openalex-snapshot

Linearity improvement in AlGaN/GaN HEMTs using longitudinally-varying gate recess

inferred← citeshttps://doi.org/10.1088/1361-6641/adce26openalex-snapshot

Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs

inferred← citeshttps://doi.org/10.1088/1674-4926/44/12/121801openalex-snapshot

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

inferred← citeshttps://doi.org/10.1109/access.2023.3336990openalex-snapshot

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

inferred← citeshttps://doi.org/10.1109/access.2024.3455559openalex-snapshot

A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

inferred← citeshttps://doi.org/10.1109/icta56932.2022.9963079openalex-snapshot

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications

inferred← citeshttps://doi.org/10.1109/imws-amp62793.2024.10966810openalex-snapshot

Analysis of Electrical and Thermal Characteristics of a Closely Coupled GaN Double-Channel HEMT

inferred← citeshttps://doi.org/10.1109/ispsd57135.2023.10147434openalex-snapshot

Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $p$-GaN Gate Double-Channel HEMTs

inferred← citeshttps://doi.org/10.1109/jeds.2023.3241306openalex-snapshot

Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit

inferred← citeshttps://doi.org/10.1109/jeds.2024.3506618openalex-snapshot

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity

inferred← citeshttps://doi.org/10.1109/led.2021.3138207openalex-snapshot

2021 Index IEEE Electron Device Letters Vol. 42

inferred← citeshttps://doi.org/10.1109/led.2022.3195489openalex-snapshot

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

inferred← citeshttps://doi.org/10.1109/led.2022.3220693openalex-snapshot

RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates

inferred← citeshttps://doi.org/10.1109/led.2023.3294696openalex-snapshot

RF p -GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

inferred← citeshttps://doi.org/10.1109/led.2023.3317280openalex-snapshot

Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

inferred← citeshttps://doi.org/10.1109/led.2024.3389826openalex-snapshot

High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment

inferred← citeshttps://doi.org/10.1109/led.2025.3640638openalex-snapshot

AlGaN/GaN/AlGaN/GaN Double Channel Fin-HEMTs With P SAT of 14.6 W/mm and Peak PAE of 45.5% for Ka-Band Applications

inferred← citeshttps://doi.org/10.1109/led.2026.3715451openalex-snapshot

Enhanced Linearity of Double-Channel Fin-HEMTs With OIP3/ P DC > 10 dB at 28 GHz

inferred← citeshttps://doi.org/10.1109/rfic70222.2026.11602156openalex-snapshot

Fully Aluminum-Based $0.25 \mu \mathrm{m} 20 \mathrm{V}$ GaN-on-Si Process With $3 \mathrm{W} / \text{mm}$ for FR3

inferred← citeshttps://doi.org/10.1109/sslchinaifws60785.2023.10399699openalex-snapshot

Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT

inferred← citeshttps://doi.org/10.1109/sslchinaifws64644.2024.10835351openalex-snapshot

Simulation Study on the Etching Depth of AlGaN/GaN Half-FinFETs

inferred← citeshttps://doi.org/10.1109/ted.2023.3311422openalex-snapshot

AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

inferred← citeshttps://doi.org/10.1109/ted.2023.3347710openalex-snapshot

Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages

inferred← citeshttps://doi.org/10.1109/ted.2025.3623095openalex-snapshot

Threshold Coupling AlGaN/GaN HEMT Incorporating a Composition-Modulated Barrier for High-Voltage and High-Linearity Application

inferred← citeshttps://doi.org/10.1109/usbereit70063.2026.11580789openalex-snapshot

GaN RF Power Amplifier Device to Circuit Design Using the ASM GaN Industry Standard Model

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Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices

inferred← citeshttps://doi.org/10.2139/ssrn.6929405openalex-snapshot

Linearity Enhancement of Double-Channel InAlN/GaN HEMTs by Multi-Threshold-Voltage Engineering with Tri-Gate Control

inferred← citeshttps://doi.org/10.3389/fmats.2025.1666203openalex-snapshot

Influence of polarization engineering in InxAlyGaN1−x−y back-barrier on AlGaN coupled channel MOS-HEMT with HfO2 gate dielectric for millimeter wave application

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Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

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