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Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots

https://doi.org/10.1109/pvsc.2015.7355809
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0022-0248(78)90293-2openalex-snapshot
X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
inferredcites →https://doi.org/10.1016/j.solmat.2010.04.040openalex-snapshot
Multi-stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs
inferredcites →https://doi.org/10.1063/1.115688openalex-snapshot
Strain relaxation in Fe3(Al,Si)/GaAs: An x-ray scattering study
inferredcites →https://doi.org/10.1063/1.126992openalex-snapshot
Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
inferredcites →https://doi.org/10.1063/1.2424523openalex-snapshot
Quantum dot strain engineering of InAs∕InGaAs nanostructures
inferredcites →https://doi.org/10.1063/1.3309411openalex-snapshot
Positioning effects on quantum dot solar cells grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4819962openalex-snapshot
Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)
inferredcites →https://doi.org/10.1088/0022-3727/42/7/073002openalex-snapshot
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
inferredcites →https://doi.org/10.1103/physrevlett.78.5014openalex-snapshot
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
inferredcites →https://doi.org/10.1103/physrevlett.97.247701openalex-snapshot
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
inferredcites →https://doi.org/10.7567/apex.6.085001openalex-snapshot
Carrier Dynamics of a Type-II Vertically Aligned InAs Quantum Dot Structure with a GaAsSb Strain-Reducing Layer

What points at this work

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inferred← citeshttps://doi.org/10.2139/ssrn.4122875openalex-extracted
The Depth Investigation on the Formation of Strain Reduced In0.54al0.34ga0.12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers
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