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Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate
Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT
Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics
Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio
Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems
Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment
Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method
An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits
Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies
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