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Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0039-6028(93)90875-kopenalex-snapshot
Single-layer MoS2 on mica: studies by means of scanning force microscopy
inferredcites →https://doi.org/10.1021/j100393a010openalex-snapshot
Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
inferredcites →https://doi.org/10.1021/nl2018178openalex-snapshot
How Good Can Monolayer MoS2 Transistors Be?
inferredcites →https://doi.org/10.1063/1.1563298openalex-snapshot
A simple quantum mechanical treatment of scattering in nanoscale transistors
inferredcites →https://doi.org/10.1063/1.1708627openalex-snapshot
Single Crystals of MoS2 Several Molecular Layers Thick
inferredcites →https://doi.org/10.1063/1.365394openalex-snapshot
Single and multiband modeling of quantum electron transport through layered semiconductor devices
inferredcites →https://doi.org/10.1063/1.3696045openalex-snapshot
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
inferredcites →https://doi.org/10.1103/physrevlett.105.136805openalex-snapshot
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
inferredcites →https://doi.org/10.1109/iedm.2009.5424361openalex-snapshot
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
inferredcites →https://doi.org/10.1109/iedm.2011.6131531openalex-snapshot
Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length
inferredcites →https://doi.org/10.1109/led.2008.917816openalex-snapshot
Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit
inferredcites →https://doi.org/10.1109/led.2012.2184520openalex-snapshot
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
inferredcites →https://doi.org/10.1109/ted.2007.915056openalex-snapshot
A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs
inferredcites →https://doi.org/10.1109/ted.2009.2028401openalex-snapshot
The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs
inferredcites →https://doi.org/10.1109/ted.2009.2030844openalex-snapshot
On Backscattering and Mobility in Nanoscale Silicon MOSFETs
inferredcites →https://doi.org/10.1109/ted.2011.2159221openalex-snapshot
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
inferredcites →https://doi.org/10.1109/ted.2012.2200688openalex-snapshot
Material Selection for Minimizing Direct Tunneling in Nanowire Transistors
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1002/adfm.201505346openalex-snapshot
Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors
inferred← citeshttps://doi.org/10.1002/adma.201806663openalex-snapshot
Nonvolatile Memories Based on Graphene and Related 2D Materials
inferred← citeshttps://doi.org/10.1002/admi.201500619openalex-snapshot
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inferred← citeshttps://doi.org/10.1002/admi.201800071openalex-snapshot
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inferred← citeshttps://doi.org/10.1002/adts.202000252openalex-snapshot
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inferred← citeshttps://doi.org/10.1002/aelm.201600091openalex-snapshot
Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals
inferred← citeshttps://doi.org/10.1002/aelm.201600191openalex-snapshot
Performance Upper Limit of sub‐10 nm Monolayer MoS 2 Transistors
inferred← citeshttps://doi.org/10.1002/aelm.201800863openalex-snapshot
Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS 2
inferred← citeshttps://doi.org/10.1002/aelm.202001169openalex-snapshot
Quantum Transport in Monolayer α‐CS Field‐Effect Transistors
inferred← citeshttps://doi.org/10.1002/aelm.202100781openalex-snapshot
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inferred← citeshttps://doi.org/10.1002/smsc.202200075openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/978-3-030-15612-1_10openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s00339-024-08202-2openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s00340-015-6058-4openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s10825-015-0750-9openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s11664-023-10505-8openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s12008-023-01545-9openalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s12633-021-01242-wopenalex-snapshot
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inferred← citeshttps://doi.org/10.1007/s40820-025-01898-8openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/b978-0-12-818658-9.00006-5openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.apsusc.2026.167969openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.cej.2023.147963openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.ijleo.2020.166166openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.micrna.2023.207742openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.micrna.2025.208364openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.nanoen.2016.03.011openalex-snapshot
Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity
inferred← citeshttps://doi.org/10.1016/j.nanoms.2023.05.003openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.physe.2022.115480openalex-snapshot
All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility
inferred← citeshttps://doi.org/10.1016/j.revmat.2025.100059openalex-snapshot
Recent progress in growth and applications of 2D materials
inferred← citeshttps://doi.org/10.1016/j.ssc.2014.11.005openalex-snapshot
Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
inferred← citeshttps://doi.org/10.1016/j.sse.2013.10.010openalex-snapshot
Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications
inferred← citeshttps://doi.org/10.1016/j.sse.2016.09.008openalex-snapshot
Vertical MoS 2 / h BN/MoS 2 interlayer tunneling field effect transistor
inferred← citeshttps://doi.org/10.1016/j.sse.2017.11.004openalex-snapshot
The prospects of transition metal dichalcogenides for ultimately scaled CMOS
inferred← citeshttps://doi.org/10.1016/j.sse.2021.108173openalex-snapshot
Performance and reliability in back-gated CVD-grown MoS2 devices
inferred← citeshttps://doi.org/10.1017/9781316681619.017openalex-snapshot
Electrical Transport in MoS2: A Prototypical Semiconducting TMDC
inferred← citeshttps://doi.org/10.1021/acs.jpcc.2c03256openalex-snapshot
Performance Upper Limit of Sub-10 nm Monolayer MoS2Transistors with MoS2–Mo Electrodes
inferred← citeshttps://doi.org/10.1021/acs.langmuir.8b01425openalex-snapshot
Systematic Study of Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Acid Treatment
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00901openalex-snapshot
Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00390openalex-snapshot
Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
inferred← citeshttps://doi.org/10.1021/acsami.3c09351openalex-snapshot
Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
inferred← citeshttps://doi.org/10.1021/acsami.6b14722openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsami.7b04919openalex-snapshot
Ambipolar MoS 2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
inferred← citeshttps://doi.org/10.1021/acsanm.4c02214openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsnano.1c01503openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsnano.7b04100openalex-snapshot
Low Variability in Synthetic Monolayer MoS 2 Devices
inferred← citeshttps://doi.org/10.1021/acsomega.1c03444openalex-snapshot
Inducing Half-Metallicity in Monolayer MoSi2N4
inferred← citeshttps://doi.org/10.1021/ja5033327openalex-snapshot
Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
inferred← citeshttps://doi.org/10.1021/jp510083wopenalex-snapshot
Structural Transitions in Monolayer MoS2by Lithium Adsorption
inferred← citeshttps://doi.org/10.1021/nn405916topenalex-snapshot
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
inferred← citeshttps://doi.org/10.1021/nn405938zopenalex-snapshot
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inferred← citeshttps://doi.org/10.1021/nn5024363openalex-snapshot
Defining and Overcoming the Contact Resistance Challenge in Scaled Carbon Nanotube Transistors
inferred← citeshttps://doi.org/10.1021/nn502553mopenalex-snapshot
Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
inferred← citeshttps://doi.org/10.1021/nn5034746openalex-snapshot
Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1038/natrevmats.2016.52openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/nmat3687openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/nnano.2014.207openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41467-020-20732-wopenalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41598-019-40675-7openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41598-022-24677-6openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41928-019-0207-4openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/s41928-019-0220-7openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/srep29615openalex-snapshot
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inferred← citeshttps://doi.org/10.1038/srep42146openalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c4cs00257aopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c5nr01052gopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c5tc04063aopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c6cp05174jopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c7cp00816copenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c7nr00284jopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/c8cs00169copenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/d3na00387fopenalex-snapshot
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inferred← citeshttps://doi.org/10.1039/d5tc02024gopenalex-snapshot
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inferred← citeshttps://doi.org/10.1049/mnl.2019.0588openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4804936openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4805059openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4833554openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4861726openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4866872openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4869142openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4894198openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4907697openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4940685openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4954257openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/1.4967406openalex-snapshot
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inferred← citeshttps://doi.org/10.1080/03772063.2025.2473536openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/0022-3727/48/14/145101openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/0022-3727/48/20/205302openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/0268-1242/30/7/075010openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-648x/aa9305openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-648x/aac0adopenalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-648x/ac13fbopenalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6528/aa510copenalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6528/ab9d40openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6528/abd49fopenalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6528/ac9417openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6641/ab9d34openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1674-4926/35/11/113002openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1674-4926/40/9/091002openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/2053-1583/aa8d37openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/2053-1591/1/2/025037openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/2053-1591/aab90aopenalex-snapshot
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inferred← citeshttps://doi.org/10.1103/physrevapplied.10.014022openalex-snapshot
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inferred← citeshttps://doi.org/10.1103/physrevapplied.14.044031openalex-snapshot
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inferred← citeshttps://doi.org/10.1103/physrevb.100.075301openalex-snapshot
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inferred← citeshttps://doi.org/10.1103/physrevb.94.104426openalex-snapshot
Hydrogen-induced ferromagnetism in two-dimensional Pt dichalcogenides
inferred← citeshttps://doi.org/10.1103/physrevmaterials.1.074804openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/access.2020.3038421openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/asicon.2013.6811950openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/drc.2013.6633804openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/eurosoi-ulis49407.2020.9365295openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/icrega50506.2021.9388220openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/iedm.2015.7409778openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/isdcs.2018.8379670openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/jeds.2022.3144500openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/jxcdc.2015.2423096openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/jxcdc.2016.2619351openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/laedc51812.2021.9437918openalex-snapshot
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons
inferred← citeshttps://doi.org/10.1109/led.2014.2300013openalex-snapshot
Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit
inferred← citeshttps://doi.org/10.1109/led.2015.2436356openalex-snapshot
Scaling Theory of Electrically Doped 2D Transistors
inferred← citeshttps://doi.org/10.1109/led.2015.2472297openalex-snapshot
A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
inferred← citeshttps://doi.org/10.1109/led.2015.2501820openalex-snapshot
Can Homojunction Tunnel FETs Scale Below 10 nm?
inferred← citeshttps://doi.org/10.1109/led.2016.2564998openalex-snapshot
Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs
inferred← citeshttps://doi.org/10.1109/led.2019.2952382openalex-snapshot
Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations
inferred← citeshttps://doi.org/10.1109/mwscas.2015.7282027openalex-snapshot
Analytical analysis of the contact resistance (Rc) of metal-MoS2 interface
inferred← citeshttps://doi.org/10.1109/nmdc.2017.8350504openalex-snapshot
Performance limits of monolayer 1T'-ReS2 nanoscale MOSFETs
inferred← citeshttps://doi.org/10.1109/tcad.2017.2729460openalex-snapshot
Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors
inferred← citeshttps://doi.org/10.1109/ted.2013.2273456openalex-snapshot
Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET
inferred← citeshttps://doi.org/10.1109/ted.2013.2284591openalex-snapshot
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inferred← citeshttps://doi.org/10.1109/ted.2014.2313065openalex-snapshot
Ballistic Transport Performance of Silicane and Germanane Transistors
inferred← citeshttps://doi.org/10.1109/ted.2015.2443039openalex-snapshot
2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
inferred← citeshttps://doi.org/10.1109/ted.2015.2444353openalex-snapshot
Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study
inferred← citeshttps://doi.org/10.1109/ted.2015.2491021openalex-snapshot
Benchmarking of MoS2FETs With Multigate Si-FET Options for 5 nm and Beyond
inferred← citeshttps://doi.org/10.1109/ted.2015.2505064openalex-snapshot
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
inferred← citeshttps://doi.org/10.1109/ted.2015.2508815openalex-snapshot
Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials
inferred← citeshttps://doi.org/10.1109/ted.2015.2512262openalex-snapshot
Thermal Transport in Single-Layer MoS2and Black Phosphorus Transistors
inferred← citeshttps://doi.org/10.1109/ted.2016.2564424openalex-snapshot
A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors
inferred← citeshttps://doi.org/10.1109/ted.2016.2644719openalex-snapshot
Assessment of 2-D Transition Metal Dichalcogenide FETs at Sub-5-nm Gate Length Scale
inferred← citeshttps://doi.org/10.1109/ted.2017.2679217openalex-snapshot
First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit
inferred← citeshttps://doi.org/10.1109/ted.2017.2685561openalex-snapshot
Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2018.2873717openalex-snapshot
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
inferred← citeshttps://doi.org/10.1109/ted.2021.3135367openalex-snapshot
Analytical Modeling of Short-Channel TMD TFET Considering Effect of Fringing Field and 2-D Junctions Depletion Regions
inferred← citeshttps://doi.org/10.1109/ted.2022.3227519openalex-snapshot
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3
inferred← citeshttps://doi.org/10.1109/ted.2023.3295790openalex-snapshot
Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-x Al x O y as Gate Dielectric Plus NH3-Plasma Treatment
inferred← citeshttps://doi.org/10.1109/ted.2023.3299914openalex-snapshot
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors With Hf1–x La x O y N z as Gate Dielectric by Optimizing La Content and Anneal Temperature Plus NH3-Plasma Treatment
inferred← citeshttps://doi.org/10.1109/ted.2024.3514577openalex-snapshot
Improved Electrical Properties of MoS2 Negative-Capacitance Field-Effect Transistors by Using Ferroelectric Hf1-xYxOy Thin Films Plus NH3-Plasma Treatment
inferred← citeshttps://doi.org/10.1109/ted.2025.3561707openalex-snapshot
NH3-Plasma Treatment Induced Performance Enhancement of MoS2 Negative-Capacitance Transistors With Zr1−x Al x O y as Ferroelectric Layer Annealed at Low Temperature
inferred← citeshttps://doi.org/10.1109/tnano.2019.2946449openalex-snapshot
Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2 Transistors
inferred← citeshttps://doi.org/10.1142/s0217979224503284openalex-snapshot
Effect of Ni-concentration on the linear and nonlinear optical properties of MoS2 nanostructures
inferred← citeshttps://doi.org/10.1145/2744769.2744782openalex-snapshot
A SPICE model of flexible transition metal dichalcogenide field-effect transistors
inferred← citeshttps://doi.org/10.1146/annurev-physchem-050317-021353openalex-snapshot
Electronic Transport in Two-Dimensional Materials
inferred← citeshttps://doi.org/10.12794/metadc1833575openalex-snapshot
Low-Energy Electron Irradiation of 2D Graphene and Stability Investigations of 2D MoS2
inferred← citeshttps://doi.org/10.1557/jmr.2015.397openalex-snapshot
Graphene and monolayer transition-metal dichalcogenides: properties and devices
inferred← citeshttps://doi.org/10.1587/transele.e98.c.283openalex-snapshot
Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
inferred← citeshttps://doi.org/10.3390/cryst8020070openalex-snapshot
Vertical Transistors Based on 2D Materials: Status and Prospects
inferred← citeshttps://doi.org/10.3390/ma11030430openalex-snapshot
Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
inferred← citeshttps://doi.org/10.3390/nano10040803openalex-snapshot
Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
inferred← citeshttps://doi.org/10.3390/nano12193465openalex-snapshot
Exfoliation of MoS2 Quantum Dots: Recent Progress and Challenges
inferred← citeshttps://doi.org/10.48550/arxiv.2003.01939openalex-snapshot
Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact
inferred← citeshttps://doi.org/10.5772/60071openalex-snapshot
Stable Field Emission from Layered MoS2 Nanosheets in High Vacuum and Observation of 1/f Noise
inferred← citeshttps://doi.org/10.7567/apex.6.064301openalex-snapshot
Increased Subthreshold Current due to Source–Drain Direct Tunneling in Ultrashort-Channel III–V Metal–Oxide–Semiconductor Field-Effect Transistors
inferred← citeshttps://doi.org/10.7567/jjap.55.065201openalex-snapshot
Photoinduced charge transfer from vacuum-deposited molecules to single-layer transition metal dichalcogenides
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