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All Region Analytical Modeling of 2-D Transition Metal Dichalcogenide Fet by Considering Effect of Fringing Field Andregion-Wise Mobility

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.spmi.2019.02.004openalex-extracted

Thermal transport in graphene field-effect transistors with ultrashort channel length

inferredcites →https://doi.org/10.1038/nnano.2010.279openalex-extracted

Single-layer MoS2 transistors

inferredcites →https://doi.org/10.1063/1.4770313openalex-extracted

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

inferredcites →https://doi.org/10.1109/55.720194openalex-extracted

Generalized scale length for two-dimensional effects in MOSFETs

inferredcites →https://doi.org/10.1109/ted.2004.832707openalex-extracted

A 2-D Analytical Solution for SCEs in DG MOSFETs

inferredcites →https://doi.org/10.1109/ted.2012.2218283openalex-extracted

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

inferredcites →https://doi.org/10.1109/ted.2014.2365028openalex-extracted

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

inferredcites →https://doi.org/10.1109/ted.2016.2547949openalex-extracted

A Short-Channel $I$ – $V$ Model for 2-D MOSFETs

inferredcites →https://doi.org/10.1109/ted.2016.2564424openalex-extracted

A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

inferredcites →https://doi.org/10.1109/ted.2016.2643698openalex-extracted

Compact Modeling of Transition Metal Dichalcogenide based Thin body Transistors and Circuit Validation

inferredcites →https://doi.org/10.1109/ted.2018.2805716openalex-extracted

Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

inferredcites →https://doi.org/10.1109/ted.2018.2818943openalex-extracted

Modeling of DG MOSFET $I$ – $V$ Characteristics in the Saturation Region

inferredcites →https://doi.org/10.1109/ted.2018.2855109openalex-extracted

Charge-Based Modeling of Transition Metal Dichalcogenide Transistors Including Ambipolar, Trapping, and Negative Capacitance Effects

inferredcites →https://doi.org/10.1109/ted.2019.2894685openalex-extracted

A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region

inferredcites →https://doi.org/10.1109/ted.2019.2951662openalex-extracted

A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps

inferredcites →https://doi.org/10.1109/ted.2020.3020900openalex-extracted

A Comprehensive Physics-Based Current–Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs

inferredcites →https://doi.org/10.1109/ted.2021.3074357openalex-extracted

A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

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