On the public citation graph

Properties of HfO[sub 2] Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water

https://doi.org/10.1149/1.1770934
0 signed · 92 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-3862(20020903)8:5<199::aid-cvde199>3.0.co;2-uopenalex-snapshot
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water
inferredcites →https://doi.org/10.1002/cvde.200390005openalex-snapshot
A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches
inferredcites →https://doi.org/10.1007/978-3-642-60856-8openalex-snapshot
Gate Dielectrics and MOS ULSIs
inferredcites →https://doi.org/10.1016/0040-6090(92)90874-bopenalex-snapshot
Atomic Layer Epitaxy
inferredcites →https://doi.org/10.1016/s0022-0248(02)02133-4openalex-snapshot
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
inferredcites →https://doi.org/10.1016/s0040-6090(01)01678-9openalex-snapshot
Thin film atomic layer deposition equipment for semiconductor processing
inferredcites →https://doi.org/10.1016/s0040-6090(02)00612-0openalex-snapshot
Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors
inferredcites →https://doi.org/10.1016/s0040-6090(02)01165-3openalex-snapshot
Atomic layer deposition of polycrystalline HfO2 films by the HfI4–O2 precursor combination
inferredcites →https://doi.org/10.1016/s0169-4332(00)00859-xopenalex-snapshot
Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures
inferredcites →https://doi.org/10.1021/cm010145kopenalex-snapshot
Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
inferredcites →https://doi.org/10.1023/a:1023948617372openalex-snapshot
Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics
inferredcites →https://doi.org/10.1039/a806762gopenalex-snapshot
Composition and thickness determination of thin oxide films: comparison of different programs and methods
inferredcites →https://doi.org/10.1063/1.115990openalex-snapshot
Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates
inferredcites →https://doi.org/10.1063/1.1458692openalex-snapshot
Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
inferredcites →https://doi.org/10.1063/1.1493657openalex-snapshot
Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.1510941openalex-snapshot
Characterization and control of the HfO2/Si(001) interfaces
inferredcites →https://doi.org/10.1063/1.1515107openalex-snapshot
Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen
inferredcites →https://doi.org/10.1063/1.1522811openalex-snapshot
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
inferredcites →https://doi.org/10.1063/1.1533117openalex-snapshot
Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition
inferredcites →https://doi.org/10.1103/physrevb.65.233106openalex-snapshot
First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
inferredcites →https://doi.org/10.1109/tphp.1971.1136425openalex-snapshot
Properties of Hafnium Dioxide Thin-Film Capacitors
inferredcites →https://doi.org/10.1116/1.1529650openalex-snapshot
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics
inferredcites →https://doi.org/10.1149/1.1450617openalex-snapshot
Effect of Annealing Conditions on a Hafnium Oxide Reinforced SiO[sub 2] Gate Dielectric Deposited by Plasma-Enhanced Metallorganic CVD

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4823793openalex-extracted
Amidoxime-Containing Zr and Hf Precursors for Thin Film Deposition
inferred← citeshttps://doi.org/10.1002/cvde.200506372openalex-snapshot
HfO2 and Hf1–xSixO2 Thin Films Grown by Metal‐Organic CVD Using Tetrakis(diethylamido)hafnium
inferred← citeshttps://doi.org/10.1002/cvde.200506434openalex-snapshot
New Precursors for the CVD of Zirconium and Hafnium Oxide Films
inferred← citeshttps://doi.org/10.1002/cvde.201300054openalex-snapshot
Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1002/cvde.201400055openalex-snapshot
Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors
inferred← citeshttps://doi.org/10.1007/1-4020-4367-8_10openalex-snapshot
DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
inferred← citeshttps://doi.org/10.1007/11499893_13openalex-snapshot
Electrical Characterization of Rare Earth Oxides Grown by Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1007/978-3-540-74559-4_6openalex-snapshot
Surface and Interface Chemistry for Gate Stacks on Silicon
inferred← citeshttps://doi.org/10.1007/s43207-021-00171-zopenalex-snapshot
Crystallographic structure and ferroelectricity of epitaxial hafnium oxide thin films
inferred← citeshttps://doi.org/10.1016/j.actamat.2025.121780openalex-snapshot
Electronic band structure engineering in ALD HfO2: Linking impurity chemistry to electronic performance and charge transport
inferred← citeshttps://doi.org/10.1016/j.apsusc.2012.04.130openalex-snapshot
IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor
inferred← citeshttps://doi.org/10.1016/j.ccr.2013.07.002openalex-snapshot
Precursors as enablers of ALD technology: Contributions from University of Helsinki
inferred← citeshttps://doi.org/10.1016/j.ceramint.2021.07.065openalex-snapshot
Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2009.10.028openalex-snapshot
Growth and phase stabilization of HfO2 thin films by ALD using novel precursors
inferred← citeshttps://doi.org/10.1016/j.jorganchem.2017.03.003openalex-snapshot
Synthesis, structural characterization, and volatility evaluation of zirconium and hafnium amidate complexes
inferred← citeshttps://doi.org/10.1016/j.mee.2011.03.098openalex-snapshot
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
inferred← citeshttps://doi.org/10.1016/j.mseb.2004.12.020openalex-snapshot
Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates
inferred← citeshttps://doi.org/10.1016/j.mssp.2026.111145openalex-snapshot
Vacuum-based long-term thermal stability evaluation of metal-organic precursors for atomic layer deposition
inferred← citeshttps://doi.org/10.1016/j.tsf.2004.09.012openalex-snapshot
Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates
inferred← citeshttps://doi.org/10.1016/j.tsf.2005.05.050openalex-snapshot
Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water
inferred← citeshttps://doi.org/10.1016/j.tsf.2005.10.082openalex-snapshot
Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.02.115openalex-snapshot
Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.04.033openalex-snapshot
Properties of atomic layer deposited HfO2 thin films
inferred← citeshttps://doi.org/10.1016/j.tsf.2009.10.146openalex-snapshot
Atomic layer deposition of HfO2: Growth initiation study on metallic underlayers
inferred← citeshttps://doi.org/10.1021/acs.cgd.1c00875openalex-snapshot
Low-Temperature Dopant-Assisted Crystallization of HfO 2 Thin Films
inferred← citeshttps://doi.org/10.1021/acs.chemmater.1c01054openalex-snapshot
Atomic Layer Deposition of Ru for Replacing Cu-Interconnects
inferred← citeshttps://doi.org/10.1021/acs.inorgchem.1c02339openalex-snapshot
Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films
inferred← citeshttps://doi.org/10.1021/acsaelm.4c02274openalex-snapshot
Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO 2 Charge-Trap Layer for Charge-Trap Flash Memory
inferred← citeshttps://doi.org/10.1021/acsaem.3c00107openalex-snapshot
Molecular Layer Deposition of Organic–Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications
inferred← citeshttps://doi.org/10.1021/cm0626583openalex-snapshot
Atomic Layer Deposition of HfO2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures
inferred← citeshttps://doi.org/10.1021/cm303703ropenalex-snapshot
Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
inferred← citeshttps://doi.org/10.1021/jp070362uopenalex-snapshot
Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors
inferred← citeshttps://doi.org/10.1021/nn3059136openalex-snapshot
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
inferred← citeshttps://doi.org/10.1039/b417866copenalex-snapshot
Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
inferred← citeshttps://doi.org/10.1039/c3tc31819bopenalex-snapshot
Resistive switching dependence on atomic layer deposition parameters in HfO 2 -based memory devices
inferred← citeshttps://doi.org/10.1039/d5tc01969aopenalex-snapshot
Functionalization of Si 3 N 4 with an aldehyde inhibitor for area selective deposition of HfO 2 and SiO 2
inferred← citeshttps://doi.org/10.1063/1.1940727openalex-snapshot
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
inferred← citeshttps://doi.org/10.1063/1.1947389openalex-snapshot
Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)
inferred← citeshttps://doi.org/10.1063/1.4757907openalex-snapshot
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
inferred← citeshttps://doi.org/10.1063/1.5087759openalex-snapshot
Atomic layer deposition of metals: Precursors and film growth
inferred← citeshttps://doi.org/10.1063/5.0256687openalex-snapshot
Atomic layer deposition of HfO2 as a charge-lean capping layer material for SiO2-modulation acceptor doping of silicon
inferred← citeshttps://doi.org/10.1088/0256-307x/39/11/118501openalex-snapshot
High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al2O3/HfO2 Dielectrics
inferred← citeshttps://doi.org/10.1088/0957-4484/25/40/405701openalex-snapshot
Crystallization of HfO2in InAs/HfO2core–shell nanowires
inferred← citeshttps://doi.org/10.1088/2631-7990/acd88eopenalex-snapshot
Atomic layer deposition of thin films: from a chemistry perspective
inferred← citeshttps://doi.org/10.1109/led.2019.2939002openalex-snapshot
Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization
inferred← citeshttps://doi.org/10.1109/tnano.2021.3069820openalex-snapshot
Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress
inferred← citeshttps://doi.org/10.1116/1.2131077openalex-snapshot
Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy
inferred← citeshttps://doi.org/10.1116/1.3625564openalex-snapshot
Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry
inferred← citeshttps://doi.org/10.1116/1.4768167openalex-snapshot
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
inferred← citeshttps://doi.org/10.1116/1.5003355openalex-snapshot
Optical characterization of pore filling in mesoporous multilayers by ultrathin atomic layer deposited hafnium dioxide
inferred← citeshttps://doi.org/10.1116/1.5134135openalex-snapshot
HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison
inferred← citeshttps://doi.org/10.1116/6.0000053openalex-snapshot
Atomic layer deposition of HfO2 films using carbon-free tetrakis(tetrahydroborato)hafnium and water
inferred← citeshttps://doi.org/10.1149/1.1922888openalex-snapshot
Atomic Layer Deposition and Characterization of HfO[sub 2] Films on Noble Metal Film Substrates
inferred← citeshttps://doi.org/10.1149/1.2183887openalex-snapshot
Interfacial Layer Properties of HfO[sub 2] Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
inferred← citeshttps://doi.org/10.1149/1.2338634openalex-snapshot
Metallorganic Chemical Vapor Deposition of Hafnium Silicate Thin Films Using a Dual Source Dimethyl-alkylamido Approach
inferred← citeshttps://doi.org/10.1149/1.2405839openalex-snapshot
Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al[sub 2]O[sub 3] and HfO[sub 2]
inferred← citeshttps://doi.org/10.1149/1.2827995openalex-snapshot
Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
inferred← citeshttps://doi.org/10.1149/1.3473805openalex-snapshot
ALD and Parasitic Growth Characteristics of the Tetrakisethylmethylamino Hafnium (TEMAH)/H[sub 2]O Process
inferred← citeshttps://doi.org/10.1149/2.0041809jssopenalex-snapshot
Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2Thin Films
inferred← citeshttps://doi.org/10.1186/s11671-019-3020-0openalex-snapshot
Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces
inferred← citeshttps://doi.org/10.1364/ome.422156openalex-snapshot
Influence of temperature and plasma parameters on the properties of PEALD HfO2
inferred← citeshttps://doi.org/10.1366/11-06473openalex-snapshot
Quantum Cascade Laser-Based Measurement of Metal Alkylamide Density during Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1533/9780857093493.2.257openalex-snapshot
Ceramic ultra-thin coatings using atomic layer deposition
inferred← citeshttps://doi.org/10.1557/jmr.2007.0242openalex-snapshot
Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors
inferred← citeshttps://doi.org/10.1557/proc-1155-c01-05openalex-snapshot
Interaction of Hf Precursor with H2O-terminated Si(001): First Principles Study
inferred← citeshttps://doi.org/10.1557/proc-1155-c09-14openalex-snapshot
Adsorption and Reaction Behaviors of Hf Precursor with Two Hydroxyls on Si(100): First Principles Study
inferred← citeshttps://doi.org/10.22184/1993-8578.2025.18.11s.612.616openalex-snapshot
ПЕРСПЕКТИВНЫЕ ПРЕКУРСОРЫ ДЛЯ ПРОЦЕССА АТОМНО-СЛОЕВОГО ОСАЖДЕНИЯ АКТИВНЫХ СЛОЕВ ЭЛЕМЕНТОВ ХРАНЕНИЯ РЕЗИСТИВНОЙ ПАМЯТИ
inferred← citeshttps://doi.org/10.3740/mrsk.2007.17.5.263openalex-snapshot
Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic LayerDeposition using Oxygen Plasma
inferred← citeshttps://doi.org/10.70675/76b3886cz082az49cfza134z7ed8fbceb5eeopenalex-snapshot
The growth and application of thin films grown by Atomic Layer Deposition (ALD)
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.