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Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO2- and ZrO2-based Capacitor Dielectrics

https://doi.org/10.1149/1.3205070
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inferred← citeshttps://doi.org/10.2139/ssrn.4823793openalex-extracted
Amidoxime-Containing Zr and Hf Precursors for Thin Film Deposition
inferred← citeshttps://doi.org/10.1002/9783527844869.ch06openalex-snapshot
1T1C HfO 2 FeRAM Materials
inferred← citeshttps://doi.org/10.1016/b978-0-08-102430-0.00008-5openalex-snapshot
Impact of Electrodes on the Ferroelectric Properties
inferred← citeshttps://doi.org/10.1016/j.mssp.2013.12.030openalex-snapshot
Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time
inferred← citeshttps://doi.org/10.1063/1.3520666openalex-snapshot
Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
inferred← citeshttps://doi.org/10.1063/1.3565056openalex-snapshot
Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1−xAlxO2/TiN metal-insulator-metal structures
inferred← citeshttps://doi.org/10.1063/1.4811226openalex-snapshot
Structural and dielectric properties of sputtered SrxZr(1−x)Oy
inferred← citeshttps://doi.org/10.1063/1.4942801openalex-snapshot
Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
inferred← citeshttps://doi.org/10.1063/1.5030562openalex-snapshot
Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
inferred← citeshttps://doi.org/10.1088/0957-4484/27/42/425709openalex-snapshot
Microstructure dependent filament forming kinetics in HfO 2 programmable metallization cells
inferred← citeshttps://doi.org/10.1109/irps48204.2025.10982827openalex-snapshot
Impact of Al-doping on Al:HfO2Dielectric Reliability in MIM Capacitors
inferred← citeshttps://doi.org/10.1109/led.2016.2590471openalex-snapshot
Observation of Self-Reset During Forming of the TiN/HfOx/TiN Resistive Switching Device
inferred← citeshttps://doi.org/10.3390/ma15238325openalex-snapshot
Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters
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