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Highly efficient GaN-based high-power flip-chip light-emitting diodes
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Outgoing claims: the papers this work cites, builds on, or argues with.
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Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling
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High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes
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Fabrication of HfO2/TiO2–based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes
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Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes
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Measurement of residual stress in quenched 1045 steel by the nanoindentation method
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Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
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On the determination of residual stress and strain fields by sharp indentation testing.
inferredcites →https://doi.org/10.1016/s1359-6454(01)00123-9openalex-snapshot
On the determination of residual stress and strain fields by sharp indentation testing.
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A new method for estimating residual stresses by instrumented sharp indentation
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Measurement of residual-stress effect by nanoindentation on elastically strained (100) W
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Insights into the Silver Reflection Layer of a Vertical LED for Light Emission Optimization
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Nitride-based semiconductors for blue and green light-emitting devices
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Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern
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III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
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inferredcites →https://doi.org/10.1063/1.1372359openalex-snapshot
Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
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High-power AlGaInN flip-chip light-emitting diodes
inferredcites →https://doi.org/10.1063/1.1863441openalex-snapshot
Ohmic and degradation mechanisms of Ag contacts on p-type GaN
inferredcites →https://doi.org/10.1063/1.2171475openalex-snapshot
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
inferredcites →https://doi.org/10.1063/1.2337007openalex-snapshot
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
inferredcites →https://doi.org/10.1063/1.2387888openalex-snapshot
Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes
inferredcites →https://doi.org/10.1063/1.2953174openalex-snapshot
Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
inferredcites →https://doi.org/10.1063/1.3206742openalex-snapshot
Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN
inferredcites →https://doi.org/10.1063/1.4967501openalex-snapshot
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
inferredcites →https://doi.org/10.1088/0953-8984/14/22/201openalex-snapshot
The doping process and dopant characteristics of GaN
inferredcites →https://doi.org/10.1103/physrevb.50.17953openalex-snapshot
Projector augmented-wave method
inferredcites →https://doi.org/10.1103/physrevb.81.165312openalex-snapshot
Theoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfaces
inferredcites →https://doi.org/10.1103/physrevlett.61.734openalex-snapshot
Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs
inferredcites →https://doi.org/10.1103/physrevlett.77.3865openalex-snapshot
Generalized Gradient Approximation Made Simple
inferredcites →https://doi.org/10.1109/led.2014.2349956openalex-snapshot
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts
inferredcites →https://doi.org/10.1109/lpt.2006.883330openalex-snapshot
Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO$_2$–SiO$_2$Multilayer Stack Omnidirectional Reflector
inferredcites →https://doi.org/10.1109/ted.2008.918414openalex-snapshot
A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes
inferredcites →https://doi.org/10.1117/12.344483openalex-snapshot
InGaN blue light-emitting diodes with optimized n-GaN layer
inferredcites →https://doi.org/10.1126/science.1108712openalex-snapshot
Solid-State Light Sources Getting Smart
inferredcites →https://doi.org/10.1149/2.0191806jssopenalex-snapshot
Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes
inferredcites →https://doi.org/10.1364/ao.56.009502openalex-snapshot
Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs
inferredcites →https://doi.org/10.1364/oe.19.002886openalex-snapshot
Effect of current spreading on the efficiency droop of InGaN light-emitting diodes
inferredcites →https://doi.org/10.1364/oe.25.026615openalex-snapshot
Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts
inferredcites →https://doi.org/10.1557/jmr.1996.0091openalex-snapshot
Influences of stress on the measurement of mechanical properties using nanoindentation: Part I. Experimental studies in an aluminum alloy
inferredcites →https://doi.org/10.1557/jmr.1996.0092openalex-snapshot
Influences of stress on the measurement of mechanical properties using nanoindentation: Part II. Finite element simulations
inferredcites →https://doi.org/10.1557/jmr.2002.0131openalex-snapshot
Residual stresses in DLC/Si and Au/Si systems: Application of a stress-relaxation model to the nanoindentation technique
inferredcites →https://doi.org/10.1557/jmr.2004.0404openalex-snapshot
Influence of residual stress on elastic modulus and hardness of soda-lime glass measured by nanoindentation
inferredcites →https://doi.org/10.3390/mi9120650openalex-snapshot
Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1016/j.physleta.2020.126929openalex-snapshot
Length effects on tensile behavior of Au-Ag heterostructured nanowires with the load on different ends: A molecular dynamics study
inferred← citeshttps://doi.org/10.1016/j.rinp.2023.106594openalex-snapshot
Machine vision inspection of early failure and line-shaped defects of blue InGaN/GaN light emitting diodes soaked in liquid nitrogen for cryogenic tests
inferred← citeshttps://doi.org/10.1016/j.scib.2024.04.030openalex-snapshot
Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices
inferred← citeshttps://doi.org/10.1016/j.spmi.2020.106422openalex-snapshot
Distributed Bragg reflector made of CdSe and ZnTe
inferred← citeshttps://doi.org/10.1016/j.spmi.2021.106990openalex-snapshot
Effect of V-pits size on the reliability of InGaN/GaN light emitting diodes
inferred← citeshttps://doi.org/10.1016/j.spmi.2021.107020openalex-snapshot
High efficiency electron-blocking-layer-free deep ultraviolet LEDs with graded Al-content AlGaN insertion layer
inferred← citeshttps://doi.org/10.1016/j.spmi.2022.107150openalex-snapshot
Polarization-doped quantum wells with graded Al-composition for highly efficient deep ultraviolet light-emitting diodes
inferred← citeshttps://doi.org/10.1021/acs.cgd.4c01388openalex-snapshot
Characterizations and Modeling of Grown MQS Nanowires with GaInN/GaN Superlattice Structures
inferred← citeshttps://doi.org/10.1021/acs.cgd.4c01612openalex-snapshot
Doping Engineering Strategy for Boosting the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c05443openalex-snapshot
AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1021/acsami.4c11025openalex-snapshot
Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature
inferred← citeshttps://doi.org/10.1021/acsanm.9b02034openalex-snapshot
Deep-UV Porous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Light-Emitting Diodes and Laser Diodes
inferred← citeshttps://doi.org/10.1021/acsomega.3c10055openalex-snapshot
Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors
inferred← citeshttps://doi.org/10.1021/acsphotonics.2c01197openalex-snapshot
Origin of the Inhomogeneous Electroluminescence of GaN-Based Green Mini-LEDs Unveiled by Microscopic Hyperspectral Imaging
inferred← citeshttps://doi.org/10.1021/acsphotonics.3c01466openalex-snapshot
Three-Dimensional Topography of High-Aspect Ratio Trenches by Sample-Induced Aberration-Compensable Coherence Scanning Interferometry
inferred← citeshttps://doi.org/10.1021/acsphotonics.6c00731openalex-snapshot
Boosting External Quantum Efficiency and Thermal Stability of AlGaInP Red Mini-Light-Emitting Diodes for Active-Matrix Backlight Displays
inferred← citeshttps://doi.org/10.1021/acsphotonics.9b00600openalex-snapshot
AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates
inferred← citeshttps://doi.org/10.1039/d0ra01900copenalex-snapshot
Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
inferred← citeshttps://doi.org/10.1039/d1nr08221copenalex-snapshot
Application of patterned sapphire substrate for III-nitride light-emitting diodes
inferred← citeshttps://doi.org/10.1039/d3nr06593fopenalex-snapshot
A 1064 nm laser adaptive limiter with visible light transparency based on one dimensional photonic crystals of LiNbO 3 defects
inferred← citeshttps://doi.org/10.1063/5.0019650openalex-snapshot
Understanding omni-directional reflectors and nominating more dielectric materials for deep ultraviolet light-emitting diodes with inclined sidewalls
inferred← citeshttps://doi.org/10.1063/5.0043240openalex-snapshot
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
inferred← citeshttps://doi.org/10.1063/5.0080123openalex-snapshot
Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer
inferred← citeshttps://doi.org/10.1063/5.0148796openalex-snapshot
Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration
inferred← citeshttps://doi.org/10.1063/5.0152951openalex-snapshot
Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector
inferred← citeshttps://doi.org/10.1063/5.0260828openalex-snapshot
High-sensitivity GaN UV photodetector integrated with graphene
inferred← citeshttps://doi.org/10.1063/5.0334759openalex-snapshot
Investigation on the electroluminescence 2D microscopic localization intensity distribution of GaN-based flip-chip green mini-LEDs
inferred← citeshttps://doi.org/10.1063/5.0349739openalex-snapshot
Low-voltage GaN tunnel junctions enabled by a thermally reconstructed InGaN sacrificial interlayer
inferred← citeshttps://doi.org/10.1088/1361-6463/acc7b3openalex-snapshot
Strategically constructed high-reflectivity multiple-stack distributed Bragg reflectors for efficient GaN-based flip-chip mini-LEDs
inferred← citeshttps://doi.org/10.1088/1361-6641/ab9209openalex-snapshot
Research on 1/f noise degradation of GaN LED caused by γ radiation under high bias
inferred← citeshttps://doi.org/10.1088/1361-6641/ad3a92openalex-snapshot
Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode
inferred← citeshttps://doi.org/10.1088/1361-6641/ad40c5openalex-snapshot
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs
inferred← citeshttps://doi.org/10.1088/1361-6641/ad4dd8openalex-snapshot
Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes
inferred← citeshttps://doi.org/10.1088/1402-4896/ad367eopenalex-snapshot
Heterogeneous nucleation optimization from AgCl and reduction control in ethylene glycol for fast and reproducible synthesis of silver nanowires
inferred← citeshttps://doi.org/10.1088/1402-4896/ad943bopenalex-snapshot
Improving radiation resilience of zener diodes through preemptive and restorative electron wind force annealing
inferred← citeshttps://doi.org/10.1088/2053-1591/acece4openalex-snapshot
Enhanced performance of GaN-based long-wavelength blue light-emitting diodes with graphene-ITO composite film as transparent conductive electrode
inferred← citeshttps://doi.org/10.1088/2631-7990/ae1a22openalex-snapshot
Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays
inferred← citeshttps://doi.org/10.1109/access.2019.2944838openalex-snapshot
Fabrication of Dynamic Holograms on Polymer Surface by Direct Laser Writing for High-Security Anti-Counterfeit Applications
inferred← citeshttps://doi.org/10.1109/jphot.2019.2927250openalex-snapshot
Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs
inferred← citeshttps://doi.org/10.1109/jphot.2020.2997343openalex-snapshot
On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes
inferred← citeshttps://doi.org/10.1109/jphot.2021.3050761openalex-snapshot
High Performance Wide Angle DBR Design for Optoelectronic Devices
inferred← citeshttps://doi.org/10.1109/jphot.2024.3515468openalex-snapshot
Piezo-Actuated Distributed Bragg Reflector–Based Tunable Fabry–Pérot Filter for Visible Light Hyperspectral Imaging
inferred← citeshttps://doi.org/10.1109/jqe.2024.3389043openalex-snapshot
Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method
inferred← citeshttps://doi.org/10.1109/led.2023.3258460openalex-snapshot
In Situ AlGaN Interlayer for Reducing the Reverse Leakage Current of InGaN Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1109/led.2023.3262589openalex-snapshot
Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity
inferred← citeshttps://doi.org/10.1109/lpt.2019.2942690openalex-snapshot
Characteristics of Micro LEDs With Snowflake p-Electrode and Composite Textured Sidewalls
inferred← citeshttps://doi.org/10.1109/lpt.2023.3330496openalex-snapshot
Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells
inferred← citeshttps://doi.org/10.1109/sslchinaifws51786.2020.9308848openalex-snapshot
High-Power Flip-Chip Monolithically integrated Light-Emitting diodes: Based on Self-Isolation Technology
inferred← citeshttps://doi.org/10.1109/ted.2021.3118990openalex-snapshot
Rational Superlattice Electron Blocking Layer Design for Boosting the Quantum Efficiency of 371 nm Ultraviolet Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1109/ted.2022.3200629openalex-snapshot
Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability
inferred← citeshttps://doi.org/10.1109/ted.2023.3283942openalex-snapshot
Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection
inferred← citeshttps://doi.org/10.1109/ted.2024.3351595openalex-snapshot
Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers
inferred← citeshttps://doi.org/10.1109/ted.2025.3538815openalex-snapshot
Boosting Performance of AlGaN-Based Ultraviolet-C Light-Emitting Diodes via High-Quality AlN Template
inferred← citeshttps://doi.org/10.1109/ted.2026.3712327openalex-snapshot
Performance Enhancement of AlGaInP-Based Red Mini-LEDs Through Acetic Acid Chemical Treatment
inferred← citeshttps://doi.org/10.1109/tnano.2023.3329161openalex-snapshot
Various Applications-Based Optimized DBR Structure With Effect of Different Material Systems
inferred← citeshttps://doi.org/10.1115/1.4064704openalex-snapshot
Forward Kinematics Analysis of High-Precision Optoelectronic Packaging Platform
inferred← citeshttps://doi.org/10.1115/1.4067269openalex-snapshot
Wideband Equivalent Circuit Modeling and Parameter Extraction Method for Through Via in Ceramic Package Substrate
inferred← citeshttps://doi.org/10.1117/1.jnp.17.016005openalex-snapshot
Enhancing light extraction efficiency of GaN-based light-emitting diodes with reticulated photonic crystals
inferred← citeshttps://doi.org/10.1134/s1063782620060111openalex-snapshot
Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching
inferred← citeshttps://doi.org/10.1134/s1063782620100218openalex-snapshot
Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures
inferred← citeshttps://doi.org/10.1149/2162-8777/ab709aopenalex-snapshot
Oblique-Angle Deposited SiO 2 /Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode
inferred← citeshttps://doi.org/10.1149/2162-8777/ab85c0openalex-snapshot
Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1149/2162-8777/abdc44openalex-snapshot
Using Ag Sinter Paste to Improve the Luminous Flux and Reliability of InGaN-Based LED Package for Commercial Vehicle Daytime Running Light
inferred← citeshttps://doi.org/10.1149/2162-8777/acf39dopenalex-snapshot
Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure
inferred← citeshttps://doi.org/10.11591/ijeecs.v32.i1.pp121-128openalex-snapshot
Using (Ba,Ca)ScO2F:Bi3+,K+ phosphor with great performance and strong heating stability for LED backlight screens
inferred← citeshttps://doi.org/10.1186/s11671-025-04219-5openalex-snapshot
Optimization of dispersion angle in resonant cavity micro-light-emitting diode using multilayer DBR and microlens structures
inferred← citeshttps://doi.org/10.1186/s11671-025-04241-7openalex-snapshot
Efficiency improvement of AlGaInP-based red micron-scale light-emitting diodes using sidewall steam oxidation
inferred← citeshttps://doi.org/10.1364/ao.385727openalex-snapshot
Scattering force and heating effect in laser-induced plasmonic welding of silver nanowire junctions
inferred← citeshttps://doi.org/10.1364/ao.399192openalex-snapshot
Improving the –3 dB bandwidth of micro-size LEDs through p-electrode patterns for visible light communication
inferred← citeshttps://doi.org/10.1364/ao.418239openalex-snapshot
Understanding the plasmon-enhanced photothermal effect of a polarized laser on metal nanowires
inferred← citeshttps://doi.org/10.1364/ao.470083openalex-snapshot
Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate
inferred← citeshttps://doi.org/10.1364/ao.58.008383openalex-snapshot
48 × 48 pixelated addressable full-color micro display based on flip-chip micro LEDs
inferred← citeshttps://doi.org/10.1364/josab.480669openalex-snapshot
Fourier-transform infrared photoreflectance spectroscopy of the InSb/InAs/In(Ga,Al)As/GaAs metamorphic heterostructures with a superlattice waveguide
inferred← citeshttps://doi.org/10.1364/josab.483832openalex-snapshot
Design tradeoffs between traditional hexagonal and emerging cubic In X Ga (1–X) N/GaN-based green light-emitting diodes
inferred← citeshttps://doi.org/10.1364/oe.27.0a1074openalex-snapshot
Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC
inferred← citeshttps://doi.org/10.1364/oe.27.0a1506openalex-snapshot
High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate
inferred← citeshttps://doi.org/10.1364/oe.27.0a1601openalex-snapshot
Optical polarization characteristics and light extraction behavior of deep-ultraviolet LED flip-chip with full-spatial omnidirectional reflector system
inferred← citeshttps://doi.org/10.1364/oe.382691openalex-snapshot
All-inorganic silicon white light-emitting device with an external quantum efficiency of 1.0%
inferred← citeshttps://doi.org/10.1364/oe.393166openalex-snapshot
Integrating remote reflector and air cavity into inclined sidewalls to enhance the light extraction efficiency for AlGaN-based DUV LEDs
inferred← citeshttps://doi.org/10.1364/oe.413088openalex-snapshot
Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodes
inferred← citeshttps://doi.org/10.1364/oe.418944openalex-snapshot
Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals
inferred← citeshttps://doi.org/10.1364/oe.428482openalex-snapshot
2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off
inferred← citeshttps://doi.org/10.1364/oe.437737openalex-snapshot
High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m2
inferred← citeshttps://doi.org/10.1364/oe.446122openalex-snapshot
Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors
inferred← citeshttps://doi.org/10.1364/oe.456758openalex-snapshot
Improving the performance for flip-chip AlGaN-based deep ultraviolet light-emitting diodes using surface textured Ga-face n-AlGaN
inferred← citeshttps://doi.org/10.1364/oe.476103openalex-snapshot
Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer
inferred← citeshttps://doi.org/10.1364/oe.501517openalex-snapshot
Broadband optical nonlinearity and all-optical switching features in low-defect GaN
inferred← citeshttps://doi.org/10.1364/oe.503024openalex-snapshot
Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs
inferred← citeshttps://doi.org/10.1364/oe.507115openalex-snapshot
Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes
inferred← citeshttps://doi.org/10.1364/oe.524295openalex-snapshot
Topography reconstruction of high aspect ratio silicon trench array via near-infrared coherence scanning interferometry
inferred← citeshttps://doi.org/10.1364/oe.527685openalex-snapshot
Rotational angle and speed detection via a chip-scale GaN optoelectronic device
inferred← citeshttps://doi.org/10.1364/oe.537508openalex-snapshot
Enhanced performance of GaN-based thin-film flip-chip LEDs with reflective current blocking layers
inferred← citeshttps://doi.org/10.1364/oe.539277openalex-snapshot
Pixelless upconversion imaging based on surface microsphere coupled light emitting diodes
inferred← citeshttps://doi.org/10.1364/oe.559792openalex-snapshot
Exploring the impacts of u -GaN surface roughness for the optoelectronic performance of mini-LEDs
inferred← citeshttps://doi.org/10.1364/oe.592103openalex-snapshot
Study on the luminous performance of the same LED chip packaged into different specifications of high-power-density devices
inferred← citeshttps://doi.org/10.1364/oe.599753openalex-snapshot
Suppressing sidewall photon leakage in ultra-small Micro-LEDs via omnidirectional reflector integration
inferred← citeshttps://doi.org/10.1364/ol.408416openalex-snapshot
Vertically stacked RGB LEDs with optimized distributed Bragg reflectors
inferred← citeshttps://doi.org/10.1364/ol.434867openalex-snapshot
Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes
inferred← citeshttps://doi.org/10.1364/ol.441300openalex-snapshot
Development of highly efficient ultraviolet LEDs on hybrid patterned sapphire substrates
inferred← citeshttps://doi.org/10.1364/ol.451551openalex-snapshot
Effect of Ga1−xInxAs1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode
inferred← citeshttps://doi.org/10.1364/ol.452477openalex-snapshot
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.
inferred← citeshttps://doi.org/10.1364/ol.468800openalex-snapshot
Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer
inferred← citeshttps://doi.org/10.1364/ol.481427openalex-snapshot
Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO 2 -antireflection film
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