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Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold

https://doi.org/10.1364/oe.409899
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssb.19610010703openalex-snapshot
Laser Conditions in Semiconductors
inferredcites →https://doi.org/10.1002/pssr.201900704openalex-snapshot
The Theoretical Optical Gain of Ge1−xSnx Nanowires
inferredcites →https://doi.org/10.1016/0022-3697(57)90013-6openalex-snapshot
Band structure of indium antimonide
inferredcites →https://doi.org/10.1016/0038-1098(72)90016-6openalex-snapshot
Minority carrier lifetime in highly doped Ge
inferredcites →https://doi.org/10.1016/j.jlumin.2020.117539openalex-snapshot
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
inferredcites →https://doi.org/10.1016/j.ssc.2006.02.023openalex-snapshot
Transferability of optical bowing parameters between binary and ternary group-IV alloys
inferredcites →https://doi.org/10.1021/acsphotonics.6b00258openalex-snapshot
Optically Pumped GeSn Microdisk Lasers on Si
inferredcites →https://doi.org/10.1021/acsphotonics.9b00712openalex-snapshot
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot
Lasing in direct-bandgap GeSn alloy grown on Si
inferredcites →https://doi.org/10.1038/s41566-020-0601-5openalex-snapshot
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
inferredcites →https://doi.org/10.1063/1.1758772openalex-snapshot
Determination of the optical energy gap of Ge1−xSnx alloys with 0<x<0.14
inferredcites →https://doi.org/10.1063/1.3329424openalex-snapshot
Theoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser
inferredcites →https://doi.org/10.1063/1.3467766openalex-snapshot
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
inferredcites →https://doi.org/10.1063/1.4767381openalex-snapshot
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
inferredcites →https://doi.org/10.1063/1.4933394openalex-snapshot
Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA+U approach
inferredcites →https://doi.org/10.1088/0268-1242/29/11/115028openalex-snapshot
Compositional dependence of the direct and indirect band gaps in Ge 1− y Sn y alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n -type materials
inferredcites →https://doi.org/10.1088/1674-1056/24/2/024211openalex-snapshot
Theoretical study of the optical gain characteristics of a Ge 1− x Sn x alloy for a short-wave infrared laser
inferredcites →https://doi.org/10.1103/physrevb.37.7112openalex-snapshot
Simple analytic model for heterojunction band offsets
inferredcites →https://doi.org/10.1103/physrevb.40.5683openalex-snapshot
Near-band-gap photoluminescence of Si-Ge alloys
inferredcites →https://doi.org/10.1103/physrevb.73.125207openalex-snapshot
Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny∕Ge1−xSix study
inferredcites →https://doi.org/10.1103/physrevb.89.165201openalex-snapshot
Indirect-to-direct gap transition in strained and unstrained Sn x Ge 1 − x alloys
inferredcites →https://doi.org/10.1109/jqe.1986.1073057openalex-snapshot
All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
inferredcites →https://doi.org/10.1109/jstqe.2013.2241397openalex-snapshot
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser
inferredcites →https://doi.org/10.1364/oe.17.011246openalex-snapshot
Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength
inferredcites →https://doi.org/10.1364/oe.20.011316openalex-snapshot
An electrically pumped germanium laser
inferredcites →https://doi.org/10.1364/optica.395687openalex-snapshot
Electrically injected GeSn lasers on Si operating up to 100 K
inferredcites →https://doi.org/10.7567/1882-0786/ab0993openalex-snapshot
High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μm
inferredcites →https://doi.org/10.7567/apex.8.031301openalex-snapshot
Investigation on the effective mass of Ge1−xSnxalloys and the transferred-electron effect

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4653522openalex-extracted
Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.152249openalex-snapshot
Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159673openalex-snapshot
Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection
inferred← citeshttps://doi.org/10.1063/5.0269760openalex-snapshot
Van der Waals epitaxy of GeSn quantum dots on MoS2 enabled by oxygen-plasma pretreatment
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3453252openalex-snapshot
Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3511716openalex-snapshot
Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers
inferred← citeshttps://doi.org/10.1109/siphotonics55903.2023.10141895openalex-snapshot
Why Room Temperature GeSn Lasers Need Carbon
inferred← citeshttps://doi.org/10.3390/app14146365openalex-snapshot
Strategic Insights into Integrated Photonics: Core Concepts, Practical Deployments, and Future Outlook
inferred← citeshttps://doi.org/10.3390/coatings13020453openalex-snapshot
Effect of Laser Pulse Width and Intensity Distribution on the Crystallographic Characteristics of GeSn Film
inferred← citeshttps://doi.org/10.7498/aps.75.20251050openalex-snapshot
Competitive mechanism of Γ-L intervalley carrier transport and direct gap radiative recombination in GeSn alloys
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