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Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

https://doi.org/10.2139/ssrn.4653522
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.202214996openalex-extracted
Bias‐Selectable Si Nanowires/PbS Nanocrystalline Film n–n Heterojunction for NIR/SWIR Dual‐Band Photodetection
inferredcites →https://doi.org/10.1007/s12274-022-5081-0openalex-extracted
High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector
inferredcites →https://doi.org/10.1016/j.apsusc.2015.09.084openalex-extracted
Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation
inferredcites →https://doi.org/10.1016/j.apsusc.2023.157086openalex-extracted
Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering
inferredcites →https://doi.org/10.1016/j.inffus.2018.09.004openalex-extracted
FusionGAN: A generative adversarial network for infrared and visible image fusion
inferredcites →https://doi.org/10.1016/j.scib.2022.09.007openalex-extracted
Low-voltage-modulated perovskite/organic dual-band photodetectors for visible and near-infrared imaging
inferredcites →https://doi.org/10.1021/acs.chemmater.5b01327openalex-extracted
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
inferredcites →https://doi.org/10.1021/acsnano.1c02007openalex-extracted
Ultrabroadband and High-Detectivity Photodetector Based on WS 2 /Ge Heterojunction through Defect Engineering and Interface Passivation
inferredcites →https://doi.org/10.1038/s41566-019-0362-1openalex-extracted
Dual-band infrared imaging using stacked colloidal quantum dot photodiodes
inferredcites →https://doi.org/10.1038/s41598-017-03238-2openalex-extracted
Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
inferredcites →https://doi.org/10.1063/1.4940194openalex-extracted
GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy
inferredcites →https://doi.org/10.1063/5.0166799openalex-extracted
Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
inferredcites →https://doi.org/10.1088/1361-6463/acd4cbopenalex-extracted
Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature
inferredcites →https://doi.org/10.1088/1674-4926/44/8/082201openalex-extracted
Photodetector based on Ruddlesden-Popper perovskite microwires with broader band detection
inferredcites →https://doi.org/10.1109/jphot.2021.3065223openalex-extracted
High-Performance GeSn Photodetector Covering All Telecommunication Bands
inferredcites →https://doi.org/10.1109/ted.2022.3145776openalex-extracted
Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates
inferredcites →https://doi.org/10.1126/sciadv.abj2521openalex-extracted
Visible and infrared dual-band imaging via Ge/MoS 2 van der Waals heterostructure
inferredcites →https://doi.org/10.1364/oe.23.018611openalex-extracted
Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique
inferredcites →https://doi.org/10.1364/oe.27.005798openalex-extracted
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
inferredcites →https://doi.org/10.1364/oe.27.032801openalex-extracted
Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique
inferredcites →https://doi.org/10.1364/oe.389378openalex-extracted
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
inferredcites →https://doi.org/10.1364/oe.409899openalex-extracted
Limitation of bulk GeSn alloy in the application of a high-performance laser due to the high threshold
inferredcites →https://doi.org/10.1364/oe.409944openalex-extracted
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
inferredcites →https://doi.org/10.1364/ol.432116openalex-extracted
Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon
inferredcites →https://doi.org/10.1364/ome.9.003277openalex-extracted
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
inferredcites →https://doi.org/10.2139/ssrn.4343359openalex-extracted
inferredcites →https://doi.org/10.3390/s23177531openalex-extracted
Dark Current Analysis on GeSn p-i-n Photodetectors
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