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Selective-Area Growth of Gan and Algan Nanowires on N-Polar Gan Templates with 4° Miscut by Plasma-Assisted Molecular Beam Epitaxy

https://doi.org/10.2139/ssrn.4278647
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/9781118984321.ch9openalex-snapshot
Selective Area Growth of GaN Nanowires by Plasma‐Assisted Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1002/andp.201500801openalex-snapshot
Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)
inferredcites →https://doi.org/10.1002/pssb.200674911openalex-snapshot
Selective growth of GaN nanocolumns by Al thin layer on substrate
inferredcites →https://doi.org/10.1002/pssb.200675628openalex-snapshot
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
inferredcites →https://doi.org/10.1002/pssb.201900611openalex-snapshot
Eutectic Formation, V/III Ratio, and Controlled Polarity Inversion in Nitrides on Silicon
inferredcites →https://doi.org/10.1002/pssc.200982618openalex-snapshot
Variations in mechanisms of selective area growth of GaN on nano‐patterned substrates by MOVPE
inferredcites →https://doi.org/10.1002/pssc.201000989openalex-snapshot
The nanorod approach: GaN NanoLEDs for solid state lighting
inferredcites →https://doi.org/10.1002/pssr.201300119openalex-snapshot
Junctionless nanowire transistor fabricated with high mobility Ge channel
inferredcites →https://doi.org/10.1002/smll.200500181openalex-snapshot
Realization of a Silicon Nanowire Vertical Surround‐Gate Field‐Effect Transistor
inferredcites →https://doi.org/10.1016/bs.semsem.2016.08.003openalex-snapshot
Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.05.057openalex-snapshot
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.11.056openalex-snapshot
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.04.035openalex-snapshot
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.09.002openalex-snapshot
Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers
inferredcites →https://doi.org/10.1016/j.pquantelec.2015.11.001openalex-snapshot
III-Nitride nanowire optoelectronics
inferredcites →https://doi.org/10.1016/j.sse.2017.11.008openalex-snapshot
An innovative large scale integration of silicon nanowire-based field effect transistors
inferredcites →https://doi.org/10.1016/s0022-0248(97)00386-2openalex-snapshot
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
inferredcites →https://doi.org/10.1016/s0022-0248(98)01346-3openalex-snapshot
Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
inferredcites →https://doi.org/10.1016/s0022-0248(99)00886-6openalex-snapshot
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
inferredcites →https://doi.org/10.1021/acs.cgd.5b00910openalex-snapshot
Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/cg501798jopenalex-snapshot
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/nl049615aopenalex-snapshot
High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
inferredcites →https://doi.org/10.1021/nl060553topenalex-snapshot
The Controlled Growth of GaN Nanowires
inferredcites →https://doi.org/10.1021/nl0707398openalex-snapshot
Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1021/nl504099sopenalex-snapshot
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
inferredcites →https://doi.org/10.1039/c3nr33738copenalex-snapshot
Vertical nanowire array-based field effect transistors for ultimate scaling
inferredcites →https://doi.org/10.1039/c4cp03322aopenalex-snapshot
Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector
inferredcites →https://doi.org/10.1063/1.2178477openalex-snapshot
High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure
inferredcites →https://doi.org/10.1063/1.2204836openalex-snapshot
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.2738381openalex-snapshot
Growth and characterization of N-polar InGaN∕GaN multiquantum wells
inferredcites →https://doi.org/10.1063/1.2801406openalex-snapshot
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.3118593openalex-snapshot
Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.3253575openalex-snapshot
Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes
inferredcites →https://doi.org/10.1063/1.3275793openalex-snapshot
Effects of nanowire coalescence on their structural and optical properties on a local scale
inferredcites →https://doi.org/10.1063/1.3443734openalex-snapshot
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
inferredcites →https://doi.org/10.1063/1.3478515openalex-snapshot
InGaN/GaN nanorod array white light-emitting diode
inferredcites →https://doi.org/10.1063/1.3488824openalex-snapshot
Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy
inferredcites →https://doi.org/10.1063/1.3633522openalex-snapshot
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4728115openalex-snapshot
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
inferredcites →https://doi.org/10.1063/1.4796100openalex-snapshot
Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
inferredcites →https://doi.org/10.1063/1.4804293openalex-snapshot
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
inferredcites →https://doi.org/10.1088/0268-1242/28/7/074009openalex-snapshot
N-polar GaN epitaxy and high electron mobility transistors
inferredcites →https://doi.org/10.1088/0957-4484/22/34/345705openalex-snapshot
Submicrometre resolved optical characterization of green nanowire-based light emitting diodes
inferredcites →https://doi.org/10.1088/0957-4484/22/9/095603openalex-snapshot
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
inferredcites →https://doi.org/10.1088/0957-4484/24/17/175303openalex-snapshot
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
inferredcites →https://doi.org/10.1088/0957-4484/26/22/225602openalex-snapshot
Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns
inferredcites →https://doi.org/10.1088/1361-6528/ab6bf2openalex-snapshot
Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer
inferredcites →https://doi.org/10.1103/physrevb.62.16826openalex-snapshot
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1103/physrevb.74.121302openalex-snapshot
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
inferredcites →https://doi.org/10.1103/physrevb.81.085310openalex-snapshot
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
inferredcites →https://doi.org/10.1103/physrevb.84.245302openalex-snapshot
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
inferredcites →https://doi.org/10.1103/physrevlett.115.085503openalex-snapshot
Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN
inferredcites →https://doi.org/10.1109/access.2015.2422842openalex-snapshot
Silicon Nanowire Field-Effect Transistors—A Versatile Class of Potentiometric Nanobiosensors
inferredcites →https://doi.org/10.1109/essderc.2010.5618216openalex-snapshot
Junctionless nanowire transistor (JNT): Properties and design guidelines
inferredcites →https://doi.org/10.1109/jstqe.2010.2068280openalex-snapshot
III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications
inferredcites →https://doi.org/10.1117/12.695168openalex-snapshot
InGaN/GaN nanocolumn LEDs emitting from blue to red
inferredcites →https://doi.org/10.1142/s0217979215300145openalex-snapshot
Fascinated Journeys into Blue Light
inferredcites →https://doi.org/10.1143/apex.1.015006openalex-snapshot
Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
inferredcites →https://doi.org/10.1143/jjap.50.052101openalex-snapshot
N-Polar III–Nitride Green (540 nm) Light Emitting Diode
inferredcites →https://doi.org/10.1364/prj.443165openalex-snapshot
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs
inferredcites →https://doi.org/10.1557/jmr.2011.103openalex-snapshot
Selective-area growth of III-V nanowires and their applications
inferredcites →https://doi.org/10.1557/mrs2007.41openalex-snapshot
Functional Nanowires
inferredcites →https://doi.org/10.3390/cryst8090366openalex-snapshot
Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
inferredcites →https://doi.org/10.3390/mi10080492openalex-snapshot
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
inferredcites →https://doi.org/10.7567/1347-4065/ab1124openalex-snapshot
The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion
inferredcites →https://doi.org/10.7567/apex.6.012101openalex-snapshot
Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.1016/j.mtchem.2025.103053openalex-snapshot
Advanced monolithic integration strategies on wide-bandgap semiconductors: the two-dimensional material heterogeneous integration and the system-level multi-functional integration
inferred← citeshttps://doi.org/10.1063/5.0181213openalex-snapshot
Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters
inferred← citeshttps://doi.org/10.1063/5.0231049openalex-snapshot
Efficient coupling between photonic waveguides and III-nitride quantum emitters in the UV-visible spectral range
inferred← citeshttps://doi.org/10.3390/photonics11040370openalex-snapshot
Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics
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