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Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/(sici)1521-396x(199911)176:1<301::aid-pssa301>3.0.co;2-hopenalex-snapshot

Quantitative Model for the MBE-Growth of Ternary Nitrides

inferredcites →https://doi.org/10.1002/pssa.201026149openalex-snapshot

Efficiency droop in nitride‐based light‐emitting diodes

inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.04.035openalex-snapshot

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.11.069openalex-snapshot

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

inferredcites →https://doi.org/10.1021/nl401483eopenalex-snapshot

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

inferredcites →https://doi.org/10.1063/1.1305830openalex-snapshot

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.2807272openalex-snapshot

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

inferredcites →https://doi.org/10.1063/1.3073860openalex-snapshot

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

inferredcites →https://doi.org/10.1063/1.3081059openalex-snapshot

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

inferredcites →https://doi.org/10.1063/1.3267151openalex-snapshot

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

inferredcites →https://doi.org/10.1063/1.3443734openalex-snapshot

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

inferredcites →https://doi.org/10.1063/1.3570656openalex-snapshot

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

inferredcites →https://doi.org/10.1063/1.4796100openalex-snapshot

Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

inferredcites →https://doi.org/10.1063/1.4804293openalex-snapshot

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

inferredcites →https://doi.org/10.1088/0957-4484/22/34/345705openalex-snapshot

Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

inferredcites →https://doi.org/10.1088/0957-4484/23/48/485701openalex-snapshot

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires

inferredcites →https://doi.org/10.1088/0957-4484/24/17/175303openalex-snapshot

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

inferredcites →https://doi.org/10.1088/0957-4484/25/43/435203openalex-snapshot

Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

inferredcites →https://doi.org/10.1103/physrevb.78.125317openalex-snapshot

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

inferredcites →https://doi.org/10.1103/physrevb.79.241308openalex-snapshot

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

inferredcites →https://doi.org/10.1143/apex.1.124002openalex-snapshot

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

inferredcites →https://doi.org/10.1143/apex.5.031001openalex-snapshot

Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 $\mu$m

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4761792openalex-extracted

Gallium Controlled Optical Emission Under In-Rich Regime in Self-Assembled Ingan Nanowires Grown on Si(111)

inferred← citeshttps://doi.org/10.1016/bs.semsem.2016.08.003openalex-snapshot

Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2019.125189openalex-snapshot

Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2023.127367openalex-snapshot

Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy

inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108561openalex-snapshot

Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111)

inferred← citeshttps://doi.org/10.1016/j.pquantelec.2022.100450openalex-snapshot

N-polar GaN: Epitaxy, properties, and device applications

inferred← citeshttps://doi.org/10.1021/acs.cgd.8b00150openalex-snapshot

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1021/acsanm.1c02806openalex-snapshot

Feather-Shaped InGaN Nanorods for Selective ppb-Level Detection of NO2 Gas at Room Temperature

inferred← citeshttps://doi.org/10.1039/c7nr04555gopenalex-snapshot

The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration

inferred← citeshttps://doi.org/10.1063/1.5050391openalex-snapshot

Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/1361-6528/aaddc1openalex-snapshot

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

inferred← citeshttps://doi.org/10.1088/1361-6528/aae0d4openalex-snapshot

Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/1361-6528/abdb16openalex-snapshot

Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy

inferred← citeshttps://doi.org/10.1088/1361-6528/ac0027openalex-snapshot

Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE

inferred← citeshttps://doi.org/10.1088/1361-6528/ae6f18openalex-snapshot

III-nitride nanowire heterostructure: an emerging solution for next generation all-color solid state light sources

inferred← citeshttps://doi.org/10.1088/1361-6641/ae6723openalex-snapshot

Review on fabrication and applications of GaN nanorods

inferred← citeshttps://doi.org/10.1103/physrevb.93.125436openalex-snapshot

Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires

inferred← citeshttps://doi.org/10.1117/1.jpe.7.016001openalex-snapshot

Growth of hierarchical GaN nanowires for optoelectronic device applications

inferred← citeshttps://doi.org/10.20868/upm.thesis.67078openalex-snapshot

Growth and characterization of GaN/AlN non-polar pseudo-substrates

inferred← citeshttps://doi.org/10.2139/ssrn.4278647openalex-snapshot

Selective-Area Growth of Gan and Algan Nanowires on N-Polar Gan Templates with 4° Miscut by Plasma-Assisted Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.70675/df0ca5fbz77b1z4f6fza188zad29aa74590eopenalex-snapshot

Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting

inferred← citeshttps://doi.org/10.7567/apex.10.045001openalex-snapshot

Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth

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