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ssrn.4601216

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0022-0248(72)90047-4openalex-extracted

Growth of InSb1-xBix single crystals by Czochralski method

inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.10.040openalex-extracted

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

inferredcites →https://doi.org/10.1016/j.matlet.2015.05.123openalex-extracted

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

inferredcites →https://doi.org/10.1016/j.mseb.2023.116533openalex-extracted

Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1016/s0022-0248(02)01253-8openalex-extracted

Growth of InBixSb(1−x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization

inferredcites →https://doi.org/10.1063/1.100350openalex-extracted

Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection

inferredcites →https://doi.org/10.1063/1.2918844openalex-extracted

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

inferredcites →https://doi.org/10.1063/1.340499openalex-extracted

Structural properties of bismuth-bearing semiconductor alloys

inferredcites →https://doi.org/10.1063/1.4748172openalex-extracted

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.4902442openalex-extracted

Bi-induced band gap reduction in epitaxial InSbBi alloys

inferredcites →https://doi.org/10.1063/1.4958863openalex-extracted

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

inferredcites →https://doi.org/10.1063/5.0121657openalex-extracted

Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb

inferredcites →https://doi.org/10.1063/5.0169971openalex-extracted

Growth of droplet-free InSbBi on GaAs substrate

inferredcites →https://doi.org/10.1103/physrevb.73.115107openalex-extracted

Structural and electronic properties of III-V bismuth compounds

inferredcites →https://doi.org/10.1103/physrevlett.76.1304openalex-extracted

New Approach for Determination of Diffusion Parameters of Adatoms

inferredcites →https://doi.org/10.1116/1.1492548openalex-extracted

Nucleation and Initial-Growth Behavior of Thin-Film Deposits

inferredcites →https://doi.org/10.7567/apex.6.112601openalex-extracted

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

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