On the public citation graph

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

https://doi.org/10.7567/apex.6.112601

0 signed · 55 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.

Claim with ORCID

Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.

See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/bf02646830openalex-snapshot

Bismuth precipitation in “monocrystalline” InBi

inferredcites →https://doi.org/10.1007/bf02655829openalex-snapshot

Ultra-low temperature OMVPE of InAs and InAsBi

inferredcites →https://doi.org/10.1007/bf02658905openalex-snapshot

Spinodal decomposition and clustering in III/V alloys

inferredcites →https://doi.org/10.1016/0022-0248(91)90496-ropenalex-snapshot

OMVPE growth and characterization of Bi-containing III–V alloys

inferredcites →https://doi.org/10.1016/0022-0248(93)90005-hopenalex-snapshot

InAsBi alloys grown by organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1016/s0022-0248(00)00738-7openalex-snapshot

Novel Sb-based materials for uncooled infrared photodetector applications

inferredcites →https://doi.org/10.1016/s0254-0584(00)00257-1openalex-snapshot

Growth, phase analysis and mechanical properties of InSb1−xBix crystals

inferredcites →https://doi.org/10.1023/a:1006785204405openalex-snapshot

Vertical Bridgman growth of InSb1–xBix crystals for LWIR applications

inferredcites →https://doi.org/10.1063/1.1336561openalex-snapshot

Raman studies on GaAs1−xBix and InAs1−xBix

inferredcites →https://doi.org/10.1063/1.2196050openalex-snapshot

Do all III-V compounds have the zinc-blende or wurtzite ground state structure?

inferredcites →https://doi.org/10.1063/1.345050openalex-snapshot

Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

inferredcites →https://doi.org/10.1063/1.346166openalex-snapshot

Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys

inferredcites →https://doi.org/10.1080/09500830903304125openalex-snapshot

First-principles study of the ground state stability of III–V bismuth compounds

inferredcites →https://doi.org/10.1088/0268-1242/8/1s/003openalex-snapshot

Structural studies of natural superlattices in group III-V alloy epitaxial layers

inferredcites →https://doi.org/10.1088/0957-4484/21/14/145606openalex-snapshot

Blocking of indium incorporation by antimony in III–V-Sb nanostructures

inferredcites →https://doi.org/10.1103/physrevb.73.115107openalex-snapshot

Structural and electronic properties of III-V bismuth compounds

inferredcites →https://doi.org/10.1103/physrevb.82.201304openalex-snapshot

Formation and vanishing of short range ordering in GaAs1−xBix thin films

inferredcites →https://doi.org/10.1107/s0365110x56001893openalex-snapshot

The structural crystallography of indium bismuthide

inferredcites →https://doi.org/10.1116/1.3562512openalex-snapshot

Atomic ordering and phase separation in MBE GaAs1−xBix

inferredcites →https://doi.org/10.1116/1.3672023openalex-snapshot

Molecular beam epitaxy control and photoluminescence properties of InAsBi

inferredcites →https://doi.org/10.1116/1.569406openalex-snapshot

Transmission electron microscopy of interfaces in III–V compound semiconductors

inferredcites →https://doi.org/10.1143/jjap.37.1608openalex-snapshot

Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE

inferredcites →https://doi.org/10.1143/jjap.38.1022openalex-snapshot

Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi

inferredcites →https://doi.org/10.1143/jjap.41.2801openalex-snapshot

Characteristics of Semiconductor Alloy GaAs1-xBix

inferredcites →https://doi.org/10.7567/jjaps.38s1.545openalex-snapshot

Fluorescence EXAFS Study on Local Structures around Bi Atoms in InAs1-xBix Grown by Low-pressure MOVPE

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4601216openalex-extracted

inferred← citeshttps://doi.org/10.2139/ssrn.4797016openalex-extracted

The Effects of Growth Interruptions in the Gaasbi Capping Growth on Inas/Gaas Quantum Dots: The Emergence of Three-Phase Nanoparticles

inferred← citeshttps://doi.org/10.1007/978-981-13-8078-5_10openalex-snapshot

Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning

inferred← citeshttps://doi.org/10.1007/978-981-13-8078-5_8openalex-snapshot

Bismuth-Related Nanostructures

inferred← citeshttps://doi.org/10.1007/s10854-017-6595-1openalex-snapshot

MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance

inferred← citeshttps://doi.org/10.1016/b978-0-08-102709-7.00011-5openalex-snapshot

Dilute bismide and nitride alloys for mid-IR optoelectronic devices

inferred← citeshttps://doi.org/10.1016/j.apsusc.2019.04.188openalex-snapshot

Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

inferred← citeshttps://doi.org/10.1016/j.apsusc.2025.162473openalex-snapshot

Structural and optical characteristics of epitaxially grown AlGaAsBi on GaAs for potential application in ultra-low noise avalanche photodiodes

inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.02.269openalex-snapshot

The effect of BiIn hetero-antisite defects in In1–PBi alloy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.02.012openalex-snapshot

Investigation of MBE-grown InAs1−Bi alloys and Bi-mediated type-II superlattices by transmission electron microscopy

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2016.10.050openalex-snapshot

A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

inferred← citeshttps://doi.org/10.1016/j.mseb.2023.117067openalex-snapshot

Semi-empirical growth model of InSbBi grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1016/j.surfin.2024.105490openalex-snapshot

The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles

inferred← citeshttps://doi.org/10.1038/srep05449openalex-snapshot

InPBi Single Crystals Grown by Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1038/srep27867openalex-snapshot

Anomalous photoluminescence in InP1−xBix

inferred← citeshttps://doi.org/10.1039/d4tc00887aopenalex-snapshot

The roles of Bi in InAs and InAsBi nanostructure growth

inferred← citeshttps://doi.org/10.1063/1.4940201openalex-snapshot

Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

inferred← citeshttps://doi.org/10.1063/1.4964799openalex-snapshot

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction

inferred← citeshttps://doi.org/10.1063/1.5096226openalex-snapshot

Molecular-beam epitaxy of GaInSbBi alloys

inferred← citeshttps://doi.org/10.1063/1.5096795openalex-snapshot

Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/0268-1242/30/11/114006openalex-snapshot

Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

inferred← citeshttps://doi.org/10.1088/0268-1242/30/9/094014openalex-snapshot

Effect of rapid thermal annealing on InP 1−x Bi x grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1103/physrevresearch.6.043116openalex-snapshot

Topological material in the III–V family: Heteroepitaxial InBi on InAs

inferred← citeshttps://doi.org/10.1116/6.0004418openalex-snapshot

Growth of InBi on InSb(100) via molecular beam epitaxy

inferred← citeshttps://doi.org/10.1186/s11671-018-2530-5openalex-snapshot

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

inferred← citeshttps://doi.org/10.1557/jmr.2018.254openalex-snapshot

Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems

inferred← citeshttps://doi.org/10.3390/cryst7030063openalex-snapshot

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

inferred← citeshttps://doi.org/10.35848/1347-4065/acc777openalex-snapshot

Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy

inferred← citeshttps://doi.org/10.70675/a4885e48zc841z48b5za433zcb792702c328openalex-snapshot

Bi thin films and new compounds : spin-orbit coupling effects in the electronic structure

inferred← citeshttps://doi.org/10.70675/e87b02f9z2f4cz4306zb937z1e97397759a6openalex-snapshot

Etude de l’incorporation de Bismuth lors de l’épitaxie par jets moléculaires de matériaux antimoniures

Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.