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https://doi.org/10.2139/ssrn.4633138
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Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1007/bf02427976openalex-extracted
Comparison of Tensile and Bulge Tests for Thin-Film Silicon Nitride
inferredcites →https://doi.org/10.1016/0038-1101(88)90414-5openalex-extracted
A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
inferredcites →https://doi.org/10.1016/j.mee.2021.111660openalex-extracted
A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication
inferredcites →https://doi.org/10.1016/s0040-6090(98)01056-6openalex-extracted
Mechanical properties of W and W(C) thin films: Young’s modulus, fracture toughness and adhesion
inferredcites →https://doi.org/10.1016/s0924-4247(98)00279-9openalex-extracted
Measurement of thermal expansion coefficient of poly-Si using microgauge sensors
inferredcites →https://doi.org/10.1063/1.1287771openalex-extracted
On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique
inferredcites →https://doi.org/10.1109/iedm.2018.8614694openalex-extracted
Scaling Trends in NAND Flash
inferredcites →https://doi.org/10.1109/imw.2015.7150307openalex-extracted
Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory
inferredcites →https://doi.org/10.1109/imw.2017.7939081openalex-extracted
Evolution of NAND Flash Memory: From 2D to 3D as a Storage Market Leader
inferredcites →https://doi.org/10.1109/irps.2019.8720410openalex-extracted
Impact of Mechanical Stress on the Electrical Performance of 3D NAND
inferredcites →https://doi.org/10.1109/jmems.2009.2039697openalex-extracted
What is the Young's Modulus of Silicon?
inferredcites →https://doi.org/10.1109/ted.2022.3154341openalex-extracted
Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
inferredcites →https://doi.org/10.1166/jnn.2017.13739openalex-extracted
Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
inferredcites →https://doi.org/10.3938/jkps.70.1041openalex-extracted
Simulation of residual stress and its impact on a poly-silicon channel for three-dimensional, stacked, vertical-NAND flash memories
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