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Physical Properties for Silicon Allotropes in Hexagonal 8 Stacking Order: First-Principles Study
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Berechnung der Fließgrenze von Mischkristallen auf Grund der Plastizitätsbedingung für Einkristalle .
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Relaxation of Crystals with the Quasi-Newton Method
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Group IV element allotropes in the Fmmm phase: First-principles calculations
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Three new C N compounds in orthorhombic symmetry: Theoretical investigations
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BN Polymorphs in Hexagonal 2–7 Stacking Orders: First-Principles and High-Throughput Study
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Electronic band structure in hexagonal close-packed Si polytypes
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Group 14 elements in the Cmcm phase with a direct band structure for photoelectric application
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Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond
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Effective Masses of Holes in Silicon
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Properties of hexagonal polytypes of group-IV elements from first-principles calculations
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Necessary and sufficient elastic stability conditions in various crystal systems
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Wurtzite silicon as a potential absorber in photovoltaics: Tailoring the optical absorption by applying strain
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Stochastic generation of complex crystal structures combining group and graph theory with application to carbon
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Influence of the Core-Valence Interaction and of the Pseudopotential Approximation on the Electron Self-Energy in Semiconductors
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Complex Low Energy Tetrahedral Polymorphs of Group IV Elements from First Principles
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Measurement of the silicon (220) lattice spacing
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Generalized Gradient Approximation Made Simple
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Phonons and related crystal properties from density-functional perturbation theory
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High-throughput calculation screening for new silicon allotropes with monoclinic symmetry
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Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers
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First principles methods using CASTEP
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High-Throughput Computation of New Carbon Allotropes with Diverse Hybridization and Ultrahigh Hardness
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Design and investigated a novel BN polymorph in orthorhombic phase
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