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The [100] Direction Strained Ge1-Xsnx Nanowires with Low Sn Contents Towards the Application of Swir or Mwir Lasers

https://doi.org/10.2139/ssrn.4859930
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssr.201900704openalex-snapshot
The Theoretical Optical Gain of Ge1−xSnx Nanowires
inferredcites →https://doi.org/10.1021/acs.chemmater.5b02757openalex-snapshot
Microwave-Assisted Ge 1– x Sn x Nanowire Synthesis: Precursor Species and Growth Regimes
inferredcites →https://doi.org/10.1021/acs.chemmater.9b00475openalex-snapshot
One-Step Fabrication of GeSn Branched Nanowires
inferredcites →https://doi.org/10.1021/acs.jpcc.8b07142openalex-snapshot
Growth of In-Plane Ge1–xSnx Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism
inferredcites →https://doi.org/10.1021/acs.jpcc.9b10444openalex-snapshot
Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn
inferredcites →https://doi.org/10.1039/c7nr09568fopenalex-snapshot
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
inferredcites →https://doi.org/10.1063/1.4804675openalex-snapshot
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
inferredcites →https://doi.org/10.1063/1.4889926openalex-snapshot
Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys
inferredcites →https://doi.org/10.1063/1.4917236openalex-snapshot
Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance
inferredcites →https://doi.org/10.1063/1.4948240openalex-snapshot
Phosphorus and carrier density of heavily n-type doped germanium
inferredcites →https://doi.org/10.1063/1.4975066openalex-snapshot
Electronic structure and electron mobility in Si1– xGex nanowires
inferredcites →https://doi.org/10.1063/1.5111872openalex-snapshot
Strain engineering in Ge/GeSn core/shell nanowires
inferredcites →https://doi.org/10.1063/5.0043511openalex-snapshot
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
inferredcites →https://doi.org/10.1103/physrevb.56.r12748openalex-snapshot
Elimination of spurious solutions from eight-band k⋅p theory
inferredcites →https://doi.org/10.1109/jstqe.2018.2832654openalex-snapshot
Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers
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