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Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Properties of Group‐IV, III‐V and II‐VI Semiconductors

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Deformation Potentials of k = 0 States of Tetrahedral Semiconductors

inferredcites →https://doi.org/10.1002/pssb.2221290125openalex-snapshot

A Localized Orbital Description of Si Using Non‐Local Potentials

inferredcites →https://doi.org/10.1006/spmi.1999.0797openalex-snapshot

Si tight-binding parameters from genetic algorithm fitting

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Quantum Annealing and Other Optimization Methods

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Genetic algorithms and simulated annealing

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Optimization by simulated annealing: Quantitative studies

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The Levenberg-Marquardt algorithm: Implementation and theory

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The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

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Intervalence band transitions in gallium arsenide

inferredcites →https://doi.org/10.1016/0022-3697(83)90064-1openalex-snapshot

A Semi-empirical tight-binding theory of the electronic structure of semiconductors†

inferredcites →https://doi.org/10.1016/0038-1098(82)90790-6openalex-snapshot

A semi-empirical tight-binding theory of the electronic structure of semiconductors

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Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

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Differential Evolution – A Simple and Efficient Heuristic for global Optimization over Continuous Spaces

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Ab initio calculation of hydrostatic absolute deformation potential of semiconductors

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Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

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Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

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Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

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Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.3701732openalex-snapshot

Structural and optical characterization of SixGe1−x−ySny alloys grown by molecular beam epitaxy

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The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

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Electronic band structure and effective mass parameters of Ge1-xSnx alloys

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Achieving direct band gap in germanium through integration of Sn alloying and external strain

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Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

inferredcites →https://doi.org/10.1063/1.4829621openalex-snapshot

Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys

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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

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Local-pseudopotential calculation for optical properties and photoemission valence-band spectrum of silicon

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Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

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Strain-induced changes to the electronic structure of germanium

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Exciton and Magneto-Absorption of the Direct and Indirect Transitions in Germanium

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Electronic Spectra of Crystalline Germanium and Silicon

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Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures

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Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

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Simplified LCAO Method for the Periodic Potential Problem

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Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

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Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs

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Spin-orbit splitting in crystalline and compositionally disordered semiconductors

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Energy-Band Structure and Optical Spectrum of Grey Tin

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Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon

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Dielectric function ofα-Sn and its temperature dependence

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Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)

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Theoretical calculations of heterojunction discontinuities in the Si/Ge system

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Band-edge deformation potentials in a tight-binding framework

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Band lineups and deformation potentials in the model-solid theory

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Electronic-band parameters in strained Si 1 − x Ge x alloys on Si 1 − y Ge y substrates

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X-point deformation potentials of III-V semiconductors in a tight-binding approach

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Electronic structure of α-Sn and its dependence on hydrostatic strain

inferredcites →https://doi.org/10.1103/physrevb.53.12549openalex-snapshot

Band-structure parameters by genetic algorithm

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Effective-mass reproducibility of the nearest-neighbor sp3s* models: Analytic results

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Improved fits of the effective masses at Γ in the spin-orbit, second-nearest-neighbor sp3s* model: Results from analytic expressions

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Universal tight-binding calculation for the electronic structure of the quaternary alloy In1−xGaxAs1−yPy

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Empirical spds * tight-binding calculation for cubic semiconductors: General method and material parameters

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Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands

inferredcites →https://doi.org/10.1103/physrevb.72.045101openalex-snapshot

Effects of short-range order on the electronic structure of disordered metallic systems

inferredcites →https://doi.org/10.1103/physrevb.73.125207openalex-snapshot

Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny∕Ge1−xSix study

inferredcites →https://doi.org/10.1103/physrevb.73.195327openalex-snapshot

Band-edge alignment of SiGe∕Si quantum wells and SiGe∕Si self-assembled islands

inferredcites →https://doi.org/10.1103/physrevb.74.205323openalex-snapshot

Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

inferredcites →https://doi.org/10.1103/physrevb.87.235307openalex-snapshot

Structural and electronic properties of α -tin nanocrystals from first principles

inferredcites →https://doi.org/10.1103/physrevlett.65.353openalex-snapshot

Special quasirandom structures

inferredcites →https://doi.org/10.1103/revmodphys.42.317openalex-snapshot

Ionicity of the Chemical Bond in Crystals

inferredcites →https://doi.org/10.1137/1.9781611971484.ch4openalex-snapshot

4. Generalized Least Squares Problems

inferredcites →https://doi.org/10.1140/epjb/e2012-21064-9openalex-snapshot

Theory of band gap bowing of disordered substitutional II–VI and III–V semiconductor alloys

inferredcites →https://doi.org/10.1143/jpsj.57.2461openalex-snapshot

Superlattice Approach to the Interface States in III–V Semiconductors

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TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

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Enhanced direct bandgap emission in germanium by micromechanical strain engineering

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

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Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

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The mole fraction effect on the elastic properties of the Ge(1-x)Snx alloys

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Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn

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Metastable Group IV Allotropes and Solid Solutions: Nanoparticles and Nanowires

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Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface

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Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

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Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires

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Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

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