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Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications

https://doi.org/10.2139/ssrn.4860491
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Realization of Short- and Long-Term Memories at Nanoscale and their Temporal Evolution in Two-Terminal Memristive Synapses
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Gold-decoration of topographical features at surfaces of synthetic molybdenum disulphide
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Offset-Control Plane Coexisting Behaviors in Two-Memristor-Based Hopfield Neural Network
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