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Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

https://doi.org/10.1021/acsami.3c04595
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201103119openalex-snapshot
Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/adfm.202003859openalex-snapshot
Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
inferredcites →https://doi.org/10.1002/advs.202104439openalex-snapshot
Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate
inferredcites →https://doi.org/10.1002/aelm.202000979openalex-snapshot
A Current–Voltage Model for Double Schottky Barrier Devices
inferredcites →https://doi.org/10.1002/pssa.201900177openalex-snapshot
Negative Capacitance Transistor with Two‐Dimensional Channel Material (Molybdenum disulfide, MoS2)
inferredcites →https://doi.org/10.1016/j.apsusc.2020.148737openalex-snapshot
Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer
inferredcites →https://doi.org/10.1016/j.cap.2020.09.013openalex-snapshot
Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications
inferredcites →https://doi.org/10.1016/j.sse.2013.10.017openalex-snapshot
A 2-D semi-analytical model of parasitic capacitances for MOSFETs with high k gate dielectric in short channel
inferredcites →https://doi.org/10.1021/acsami.5b11653openalex-snapshot
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
inferredcites →https://doi.org/10.1021/cm3001199openalex-snapshot
Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition
inferredcites →https://doi.org/10.1021/nl071804gopenalex-snapshot
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
inferredcites →https://doi.org/10.1021/nl302049kopenalex-snapshot
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
inferredcites →https://doi.org/10.1038/nmat4148openalex-snapshot
Negative capacitance in a ferroelectric capacitor
inferredcites →https://doi.org/10.1038/s41565-017-0010-1openalex-snapshot
Steep-slope hysteresis-free negative capacitance MoS2 transistors
inferredcites →https://doi.org/10.1038/s41578-019-0089-0openalex-snapshot
Ferroelectric negative capacitance
inferredcites →https://doi.org/10.1038/s41699-021-00229-wopenalex-snapshot
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
inferredcites →https://doi.org/10.1038/s41928-022-00877-wopenalex-snapshot
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
inferredcites →https://doi.org/10.1039/c6tc04807bopenalex-snapshot
An extensive study of the influence of dopants on the ferroelectric properties of HfO 2
inferredcites →https://doi.org/10.1039/c7nr02121fopenalex-snapshot
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
inferredcites →https://doi.org/10.1039/d1nr01535dopenalex-snapshot
Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.4811483openalex-snapshot
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
inferredcites →https://doi.org/10.1063/1.5019418openalex-snapshot
Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application
inferredcites →https://doi.org/10.1088/1361-6528/abe0e3openalex-snapshot
Improved subthreshold swing of MoS 2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf 0.5 Zr 0.5 O 2 gate dielectric
inferredcites →https://doi.org/10.1088/1361-6528/abfb9aopenalex-snapshot
Effects of high pressure oxygen annealing on Hf 0.5 Zr 0.5 O 2 ferroelectric device
inferredcites →https://doi.org/10.1088/1361-6528/abfc70openalex-snapshot
Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films
inferredcites →https://doi.org/10.1088/1674-1056/ac01c4openalex-snapshot
Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors*
inferredcites →https://doi.org/10.1109/iedm.2011.6131532openalex-snapshot
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
inferredcites →https://doi.org/10.1109/iedm.2015.7409760openalex-snapshot
Sub-60mV-swing negative-capacitance FinFET without hysteresis
inferredcites →https://doi.org/10.1109/iedm.2016.7838401openalex-snapshot
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
inferredcites →https://doi.org/10.1109/jxcdc.2015.2448414openalex-snapshot
Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs
inferredcites →https://doi.org/10.1109/ted.2016.2514783openalex-snapshot
Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
inferredcites →https://doi.org/10.1109/ted.2021.3118330openalex-snapshot
Improved Tradeoff Between Subthreshold Swing and Hysteresis for MoS2Negative-Capacitance FETs by Optimizing Gate-Stack of Hf1−xZrxO2/Al2O3
inferredcites →https://doi.org/10.1126/sciadv.aau0906openalex-snapshot
Laser-writable high-k dielectric for van der Waals nanoelectronics
inferredcites →https://doi.org/10.1126/sciadv.abf8744openalex-snapshot
Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
inferredcites →https://doi.org/10.1186/s11671-019-2927-9openalex-snapshot
Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2
inferredcites →https://doi.org/10.1557/s43578-020-00074-5openalex-snapshot
Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition
inferredcites →https://doi.org/10.35848/1347-4065/ac1250openalex-snapshot
Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering
inferredcites →https://doi.org/10.7567/apex.11.110101openalex-snapshot
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4783067openalex-extracted
Impact of Buffer Layer on Mos2/Cips Vdw Ncfet Logic Transistor
inferred← citeshttps://doi.org/10.2139/ssrn.4860491openalex-extracted
Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications
inferred← citeshttps://doi.org/10.1002/adfm.202505971openalex-snapshot
Synthesis of Large‐Area 2D Transition Metal Dichalcogenides via Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1002/adma.74921openalex-snapshot
Negative Differential Resistance Electronics: From Nonmonotonic Transport Physics to Functionally Compressed Computing
inferred← citeshttps://doi.org/10.1007/s10470-025-02528-4openalex-snapshot
Low power negative capacitance field effect transistor (NCFET) design for ECG applications using compression and A-CNN based classification
inferred← citeshttps://doi.org/10.1007/s13391-025-00624-1openalex-snapshot
Integration of Ferroelectric and 2D Materials for Next-Generation High-performance Electronics
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.161050openalex-snapshot
Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses
inferred← citeshttps://doi.org/10.1016/j.mtelec.2025.100178openalex-snapshot
Metal oxide semiconductor-based negative capacitance field-effect transistors with a sub-threshold swing of below 30 mV/dec
inferred← citeshttps://doi.org/10.1016/j.physleta.2024.129763openalex-snapshot
Influence of buffer layer engineering in MoS2/CIPS vdW NCFET logic transistor
inferred← citeshttps://doi.org/10.1021/acsaelm.4c00944openalex-snapshot
An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide
inferred← citeshttps://doi.org/10.1021/acsaelm.5c02531openalex-snapshot
Synergistic Effects of Electric Field and Thermal Treatment on Solution-Processed In 2 O 3 Thin-Film Transistors
inferred← citeshttps://doi.org/10.1021/acsami.4c06648openalex-snapshot
WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications
inferred← citeshttps://doi.org/10.1021/acsphotonics.4c00183openalex-snapshot
High-Detectivity and Broadband MoS2 Phototransistor Array by Coupling Negative Capacitance and Local Surface Plasmon Resonance Effects
inferred← citeshttps://doi.org/10.1038/s41928-025-01448-5openalex-snapshot
Gate stack engineering of two-dimensional transistors
inferred← citeshttps://doi.org/10.1063/5.0308942openalex-snapshot
Recent advances in ferroelectric-based negative capacitances for electronic devices
inferred← citeshttps://doi.org/10.1109/ted.2025.3589197openalex-snapshot
Analytical Modeling of Negative Capacitance Field-Effect Transistor for Highly Sensitive Biosensor Applications
inferred← citeshttps://doi.org/10.1515/htmp-2024-0069openalex-snapshot
Source-modulated controllable growth and mechanism exploration of 2D MoS 2 deposited by NaCl-assisted CVD
inferred← citeshttps://doi.org/10.1515/nanoph-2024-0371openalex-snapshot
Optimization of NC‐LSPR coupled MoS 2 phototransistors for high‐performance broad‐spectrum detection
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