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Lasing Characteristics of Gainasp Sch–Mqw Laser Diodes Grown on Hydrophilic-Bonded Inp–Si Substrates

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The forthcoming Artificial Intelligence (AI) revolution: Its impact on society and firms
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Artificial Intelligence (AI): Multidisciplinary perspectives on emerging challenges, opportunities, and agenda for research, practice and policy
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Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate
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On-chip light sources for silicon photonics
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High-performance Ge-on-Si photodetectors
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Silicon optical modulators
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Plasma-assisted InP-to-Si low temperature wafer bonding
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Optical interconnects in systems
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Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics
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High-Speed Silicon Photonics Modulators
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Scaling Optical Interconnects for Hyperscale Data Center Networks
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Wafer Bonding of InP to Si and its Application to Optical Devices
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Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing
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Review of Power Semiconductor Device Reliability for Power Converters
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Ge-Photodetectors for Si-Based Optoelectronic Integration
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Overview of Optical Interconnect Technology
inferredcites →https://doi.org/10.7567/jjap.53.116502openalex-snapshot
Thermal treatment for preventing void formation on directly-bonded InP/Si interface
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Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate
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