On the public citation graph

Neutron-Gamma Irradiation of 4H-SiC Piezoresistive Pressure/Temperature Sensors

0 signed · 17 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/j.fusengdes.2011.03.065openalex-snapshot
Radiation induced changes in electrical conductivity of chemical vapor deposited silicon carbides under fast neutron and gamma-ray irradiations
inferredcites →https://doi.org/10.1016/j.nima.2010.06.211openalex-snapshot
The effects of neutron irradiation and low temperature annealing on the electrical properties of highly doped 4H silicon carbide
inferredcites →https://doi.org/10.1021/cg501216dopenalex-snapshot
Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals
inferredcites →https://doi.org/10.1063/1.52282openalex-snapshot
Introduction to radiation-resistant semiconductor devices and circuits
inferredcites →https://doi.org/10.1088/1748-0221/18/11/c11027openalex-snapshot
Neutron radiation induced effects in 4H-SiC PiN diodes
inferredcites →https://doi.org/10.1088/1757-899x/755/1/012077openalex-snapshot
High level gamma radiation effects on platinum and silicon diode cryogenic temperature sensors
inferredcites →https://doi.org/10.1103/physrev.52.777openalex-snapshot
The Induced Radioactivity of Titanium and Vanadium
inferredcites →https://doi.org/10.1109/16.930664openalex-snapshot
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
inferredcites →https://doi.org/10.1109/23.211359openalex-snapshot
Fast neutron-induced changes in net impurity concentration of high-resistivity silicon
inferredcites →https://doi.org/10.1109/23.340520openalex-snapshot
Analysis of neutron damage in high-temperature silicon carbide JFETs
inferredcites →https://doi.org/10.1109/led.2014.2379262openalex-snapshot
4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery
inferredcites →https://doi.org/10.1109/tns.2006.875151openalex-snapshot
The fast neutron response of 4H silicon carbide semiconductor radiation detectors
inferredcites →https://doi.org/10.13182/fst95-a30393openalex-snapshot
Neutron Irradiation Damage of Silicon Carbide
inferredcites →https://doi.org/10.2172/5941890openalex-snapshot
Effect of aging on response time of nuclear plant pressure sensors
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.433-436.957openalex-snapshot
Radiation Hardness of Silicon Carbide
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.555.147openalex-snapshot
A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.963.730openalex-snapshot
Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.