On the public citation graph

4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

https://doi.org/10.1109/led.2014.2379262
0 signed · 121 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0025-5408(72)90070-0openalex-snapshot
The elastic modulus of dense polycrystalline silicon carbide
inferredcites →https://doi.org/10.1016/b978-0-08-006768-1.50018-8openalex-snapshot
OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES
inferredcites →https://doi.org/10.1063/1.337456openalex-snapshot
Thermal expansion of the hexagonal (4H) polytype of SiC
inferredcites →https://doi.org/10.1063/1.365578openalex-snapshot
Relativistic band structure calculation of cubic and hexagonal SiC polytypes
inferredcites →https://doi.org/10.1088/0960-1317/22/8/085034openalex-snapshot
Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors
inferredcites →https://doi.org/10.1143/jjap.50.06ge05openalex-snapshot
First-Principles Simulation on Piezoresistivity in Alpha and Beta Silicon Carbide Nanosheets
inferredcites →https://doi.org/10.4071/hitec-ta25openalex-snapshot
High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors
inferredcites →https://doi.org/10.7567/jjap.50.06ge05openalex-snapshot
First-Principles Simulation on Piezoresistivity in Alpha and Beta Silicon Carbide Nanosheets

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4051374openalex-extracted
Fabrication and Performance of a Bulk 4h-Sic Mems Piezoresistive Accelerometer
inferred← citeshttps://doi.org/10.2139/ssrn.4686135openalex-extracted
Study on Silicon Carbide High-Temperature Pressure Sensor Based on Mems Technology
inferred← citeshttps://doi.org/10.1002/9781119774419.ch9openalex-snapshot
Mechanical Sensors
inferred← citeshttps://doi.org/10.1002/adem.201700858openalex-snapshot
Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications
inferred← citeshttps://doi.org/10.1002/admt.202400046openalex-snapshot
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
inferred← citeshttps://doi.org/10.1002/advs.202001294openalex-snapshot
Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring
inferred← citeshttps://doi.org/10.1007/978-3-030-16577-2_1openalex-snapshot
From Si Towards SiC Technology for Harsh Environment Sensing
inferred← citeshttps://doi.org/10.1007/978-3-319-55544-7_1openalex-snapshot
Introduction and Literature Review
inferred← citeshttps://doi.org/10.1007/s00542-020-05175-zopenalex-snapshot
Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design
inferred← citeshttps://doi.org/10.1007/s00542-026-06024-1openalex-snapshot
High-sensitivity 4H-SiC piezoresistive pressure sensor for stable operation at 500 °C: chip manufacturing and high-temperature packaging
inferred← citeshttps://doi.org/10.1007/s10586-017-1441-zopenalex-snapshot
A pressure sensor with electrostatic self-detecting structure
inferred← citeshttps://doi.org/10.1007/s10853-024-10260-zopenalex-snapshot
Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors
inferred← citeshttps://doi.org/10.1007/s12633-021-01073-9openalex-snapshot
A Simulation Approach to Study the Effect of SiC Polytypism Factor on Sensitivity of Piezoresistive MEMS Pressure Sensor
inferred← citeshttps://doi.org/10.1007/s12633-021-01330-xopenalex-snapshot
Research on Temperature Zero Drift of SiC Piezoresistive Pressure Sensor Based on Asymmetric Wheatstone Bridge
inferred← citeshttps://doi.org/10.1007/s13320-021-0640-7openalex-snapshot
All-SiC Fiber-Optic Sensor Based on Direct Wafer Bonding for High Temperature Pressure Sensing
inferred← citeshttps://doi.org/10.1007/s40799-023-00695-5openalex-snapshot
Design and Fabrication of Indium Tin Oxide Based Thin Film Piezoresistive Pressure Sensor
inferred← citeshttps://doi.org/10.1007/s41683-021-00068-3openalex-snapshot
Design, analysis and fabrication of 4H–SiC diaphragm for piezoresistive MEMS pressure sensor
inferred← citeshttps://doi.org/10.1016/j.apsusc.2018.09.050openalex-snapshot
De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film
inferred← citeshttps://doi.org/10.1016/j.ceramint.2019.10.123openalex-snapshot
Direct bonding of silicon carbide with hydrofluoric acid treatment for high-temperature pressure sensors
inferred← citeshttps://doi.org/10.1016/j.ceramint.2022.01.100openalex-snapshot
Two-step femtosecond laser etching for bulk micromachining of 4H–SiC membrane applied in pressure sensing
inferred← citeshttps://doi.org/10.1016/j.ceramint.2023.06.112openalex-snapshot
Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method
inferred← citeshttps://doi.org/10.1016/j.ceramint.2025.11.006openalex-snapshot
Mechanism analysis of N-type 4H-SiC piezoresistive effect based on DFT-DPT and systematic study of inverted leadless packaged sensor device
inferred← citeshttps://doi.org/10.1016/j.eng.2024.12.036openalex-snapshot
Pressure Sensors Based on the Third-Generation Semiconductor Silicon Carbide: A Comprehensive Review
inferred← citeshttps://doi.org/10.1016/j.jmrt.2022.02.012openalex-snapshot
Application of femtosecond laser etching in the fabrication of bulk SiC accelerometer
inferred← citeshttps://doi.org/10.1016/j.jmrt.2023.03.229openalex-snapshot
Helium focused ion beam induced subsurface damage on Si and SiC substrates: experiments and generative deep neural network modeling via position-dependent input
inferred← citeshttps://doi.org/10.1016/j.jnoncrysol.2025.123572openalex-snapshot
Shaping the future of high-temperature sensing: A review of silicon-based precursor-derived ceramic technology
inferred← citeshttps://doi.org/10.1016/j.matdes.2018.07.014openalex-snapshot
Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures
inferred← citeshttps://doi.org/10.1016/j.measurement.2024.116459openalex-snapshot
Exploration of the transverse seebeck effect in the inclined nitrogen-doped 4H-SiC thin film
inferred← citeshttps://doi.org/10.1016/j.mee.2022.111793openalex-snapshot
Design, fabrication and test of a bulk SiC MEMS accelerometer
inferred← citeshttps://doi.org/10.1016/j.mejo.2022.105568openalex-snapshot
Simulation and reliability testing of leadless package high-temperature pressure sensor
inferred← citeshttps://doi.org/10.1016/j.mssp.2023.108104openalex-snapshot
Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108137openalex-snapshot
Application of bulk silicon carbide technology in high temperature MEMS sensors
inferred← citeshttps://doi.org/10.1016/j.pedc.2025.100076openalex-snapshot
Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity
inferred← citeshttps://doi.org/10.1016/j.sna.2017.06.009openalex-snapshot
InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments
inferred← citeshttps://doi.org/10.1016/j.sna.2023.114834openalex-snapshot
High reliability of piezoresistive pressure sensors by wafer to wafer direct bonding at room temperature
inferred← citeshttps://doi.org/10.1016/j.sna.2026.118062openalex-snapshot
Progress in multi-axis force sensors: Sensing mechanisms, structural design, and applications in humanoid robots
inferred← citeshttps://doi.org/10.1021/acsami.4c02161openalex-snapshot
Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC
inferred← citeshttps://doi.org/10.1021/acsami.5c03045openalex-snapshot
Advances in Silicon Carbides and Their MEMS Pressure Sensors for High Temperature and Pressure Applications
inferred← citeshttps://doi.org/10.1021/acsami.6c05269openalex-snapshot
Large Piezoresistive Effect in a Ti/n-4H-SiC Schottky Junction
inferred← citeshttps://doi.org/10.1038/s41378-023-00496-1openalex-snapshot
Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments
inferred← citeshttps://doi.org/10.1038/s41378-025-00929-zopenalex-snapshot
Development of leadless packaged heavily doped N-type 4H-SiC pressure sensor family for harsh environments
inferred← citeshttps://doi.org/10.1038/srep28499openalex-snapshot
Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
inferred← citeshttps://doi.org/10.1039/c5tc01898fopenalex-snapshot
The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices
inferred← citeshttps://doi.org/10.1039/c5tc02984hopenalex-snapshot
Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices
inferred← citeshttps://doi.org/10.1039/c6ra04501dopenalex-snapshot
Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1039/c7ra11922dopenalex-snapshot
Highly sensitive p-type 4H-SiC van der Pauw sensor
inferred← citeshttps://doi.org/10.1039/c8ra05797dopenalex-snapshot
Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures
inferred← citeshttps://doi.org/10.1063/1.5100708openalex-snapshot
Effect of deposition temperature on microstructure properties of SiC thin films deposited using RF magnetron sputtering
inferred← citeshttps://doi.org/10.1063/1.5120083openalex-snapshot
Optimal design of SiC piezoresistive pressure sensor considering material anisotropy
inferred← citeshttps://doi.org/10.1063/5.0189054openalex-snapshot
4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C
inferred← citeshttps://doi.org/10.1080/10408436.2019.1588705openalex-snapshot
Integrated Sensors in Advanced Composites: A Critical Review
inferred← citeshttps://doi.org/10.1088/0960-1317/25/9/095016openalex-snapshot
Thermomechanical properties and performance of ceramic resonators for wireless pressure reading at high temperatures
inferred← citeshttps://doi.org/10.1088/1361-6439/ab7785openalex-snapshot
A 350 °C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests
inferred← citeshttps://doi.org/10.1088/1361-6439/ac88dcopenalex-snapshot
Fabrication of grooved LGS resonators based high temperature SAW sensors and analysis with FEM simulation
inferred← citeshttps://doi.org/10.1088/1361-6641/aa59a7openalex-snapshot
Bipolar integrated circuits in SiC for extreme environment operation
inferred← citeshttps://doi.org/10.1088/1757-899x/307/1/012004openalex-snapshot
Design and simulation analysis of a novel pressure sensor based on graphene film
inferred← citeshttps://doi.org/10.1089/space.2018.0036openalex-snapshot
High-Temperature Mechanical Characterization of Laser-Machined Sapphire for High-Temperature Pressure Sensor Applications
inferred← citeshttps://doi.org/10.1109/ectc.2019.00155openalex-snapshot
Temporary SiC-SiC Wafer Bonding Compatible with High Temperature Annealing
inferred← citeshttps://doi.org/10.1109/itherm45881.2020.9190334openalex-snapshot
Measurement of the Temperature Dependence of the Piezoresistive Coefficients of 4H Silicon Carbide
inferred← citeshttps://doi.org/10.1109/jmems.2015.2470132openalex-snapshot
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
inferred← citeshttps://doi.org/10.1109/jmems.2016.2642580openalex-snapshot
A Wireless Passive Pressure and Temperature Sensor via a Dual LC Resonant Circuit in Harsh Environments
inferred← citeshttps://doi.org/10.1109/jmems.2017.2774000openalex-snapshot
A Passive Wireless Microelectromechanical Pressure Sensor for Harsh Environments
inferred← citeshttps://doi.org/10.1109/jsen.2020.3019711openalex-snapshot
Surface-Micromachined Silicon Carbide Pirani Gauges for Harsh Environments
inferred← citeshttps://doi.org/10.1109/jsen.2021.3096695openalex-snapshot
Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications—Part II: Sensor Design and Simulation
inferred← citeshttps://doi.org/10.1109/jsen.2021.3121882openalex-snapshot
Development of All-SiC Absolute Pressure Sensor Based on Sealed Cavity Structure
inferred← citeshttps://doi.org/10.1109/jsen.2022.3153630openalex-snapshot
Investigation on Piezoresistive Effect of n-Type 4H-SiC Based on All-SiC Pressure Sensors
inferred← citeshttps://doi.org/10.1109/jsen.2022.3174046openalex-snapshot
Piezoresistive 4H-SiC Pressure Sensor With Diaphragm Realized by Femtosecond Laser
inferred← citeshttps://doi.org/10.1109/jsen.2022.3195231openalex-snapshot
A Wide Range and High Repeatability MEMS Pressure Sensor Based on Graphene
inferred← citeshttps://doi.org/10.1109/jsen.2023.3323318openalex-snapshot
Materials and Sensing Mechanisms for High-Temperature Pressure Sensors: A Review
inferred← citeshttps://doi.org/10.1109/jsen.2024.3373813openalex-snapshot
High-Temperature SiC Piezoresistive Accelerometer Fabricated by Femtosecond Laser
inferred← citeshttps://doi.org/10.1109/jsen.2025.3560225openalex-snapshot
Very High-Temperature Operation and Noise-Limited Performance of 4H-SiC Lateral Magnetotransistors
inferred← citeshttps://doi.org/10.1109/jsen.2025.3586120openalex-snapshot
SiC Cavity-Based Pressure Sensor With High Dynamic Range
inferred← citeshttps://doi.org/10.1109/led.2019.2899068openalex-snapshot
Wireless Battery-Free SiC Sensors Operating in Harsh Environments Using Resonant Inductive Coupling
inferred← citeshttps://doi.org/10.1109/mems49605.2023.10052162openalex-snapshot
Silicon Carbide Reinforced Vertically Aligned Carbon Nanotube Composite for Harsh Environment Mems
inferred← citeshttps://doi.org/10.1109/mems51782.2021.9375268openalex-snapshot
Investigation of Deep Dry Etching of 4H SIC Material for MEMS Applications Using DOE Modelling
inferred← citeshttps://doi.org/10.1109/naecon.2015.7443073openalex-snapshot
Design of wide temperature range resonant-mode absolute MEMS pressure sensor
inferred← citeshttps://doi.org/10.1109/nems51815.2021.9451358openalex-snapshot
Mass fabrication of 4H-SiC high temperature pressure sensors by femtosecond laser etching
inferred← citeshttps://doi.org/10.1109/nems51815.2021.9451535openalex-snapshot
Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices
inferred← citeshttps://doi.org/10.1109/sensors56945.2023.10324947openalex-snapshot
Design, Fabrication, and Test of 4H-SiC Accelerometer
inferred← citeshttps://doi.org/10.1109/sensors56945.2023.10324974openalex-snapshot
High Temperature Characteristics of Piezoresistive Silicon Carbide Pressure Sensors Implemented by Leadless Packaging
inferred← citeshttps://doi.org/10.1109/sr.2025.3585097openalex-snapshot
Advanced Materials for RF Sensors in Harsh Environments: A Comprehensive Review
inferred← citeshttps://doi.org/10.1109/tcpmt.2017.2696967openalex-snapshot
Laser Sintering of Nano-Ag Particle Paste for High-Temperature Electronics Assembly
inferred← citeshttps://doi.org/10.1109/ted.2022.3148702openalex-snapshot
Development of Laser-Micromachined 4H-SiC MEMS Piezoresistive Pressure Sensors for Corrosive Environments
inferred← citeshttps://doi.org/10.1109/ted.2025.3539647openalex-snapshot
Short-Pulse Laser and Plasma Etching Composite Micromachining for Realizing High-Accuracy SiC Pressure Sensor
inferred← citeshttps://doi.org/10.1109/transducers.2019.8808553openalex-snapshot
Characterization of Silicon Carbide Pressure Sensors at 800 °C
inferred← citeshttps://doi.org/10.1111/jace.19548openalex-snapshot
Temperature effects on electrical resistivity of selected ceramics for high‐temperature packaging applications
inferred← citeshttps://doi.org/10.1116/6.0000776openalex-snapshot
β-Ga2O3 Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature
inferred← citeshttps://doi.org/10.1557/jmr.2016.321openalex-snapshot
Material aspects of wide temperature range amplifier design in SiC bipolar technologies
inferred← citeshttps://doi.org/10.17577/ijertv4is110384openalex-snapshot
A Review on Evolution, Current Trends and Future Scope of MEMS Piezoresistive Pressure Sensor
inferred← citeshttps://doi.org/10.2139/ssrn.7023472openalex-snapshot
Neutron-Gamma Irradiation of 4H-SiC Piezoresistive Pressure/Temperature Sensors
inferred← citeshttps://doi.org/10.2139/ssrn.7499339openalex-snapshot
A Corrugated 4H-SiC Piezoresistive MEMS Pressure Sensor for High-Temperature Applications: Structural Optimization, Thermal Stability and Noise Performance Analysis
inferred← citeshttps://doi.org/10.23919/icep.2018.8374649openalex-snapshot
Feasibility study of all-SiC pressure sensor fabrication without deep etching
inferred← citeshttps://doi.org/10.2514/6.2023-4164openalex-snapshot
Evaluation of Silicon Carbide Pressure Sensor in Turbofan Engine Core Exhaust Nozzle
inferred← citeshttps://doi.org/10.29026/oea.2022.210029openalex-snapshot
Piezoresistive design for electronic skin: from fundamental to emerging applications
inferred← citeshttps://doi.org/10.3390/app10175944openalex-snapshot
Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales
inferred← citeshttps://doi.org/10.3390/ma14010128openalex-snapshot
Fabrication of SiC Sealing Cavity Structure for All-SiC Piezoresistive Pressure Sensor Applications
inferred← citeshttps://doi.org/10.3390/mi10100629openalex-snapshot
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
inferred← citeshttps://doi.org/10.3390/mi10100635openalex-snapshot
Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
inferred← citeshttps://doi.org/10.3390/mi12010056openalex-snapshot
Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology
inferred← citeshttps://doi.org/10.3390/mi12020216openalex-snapshot
Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC
inferred← citeshttps://doi.org/10.3390/mi14030587openalex-snapshot
Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test
inferred← citeshttps://doi.org/10.3390/mi8100301openalex-snapshot
AlN-Based Ceramic Patch Antenna-Type Wireless Passive High-Temperature Sensor
inferred← citeshttps://doi.org/10.3390/nano14020187openalex-snapshot
Progress of One-Dimensional SiC Nanomaterials: Design, Fabrication and Sensing Applications
inferred← citeshttps://doi.org/10.3390/nano9070981openalex-snapshot
Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire
inferred← citeshttps://doi.org/10.3390/s18082676openalex-snapshot
A Ceramic Diffusion Bonding Method for Passive LC High-Temperature Pressure Sensor
inferred← citeshttps://doi.org/10.3390/s20061788openalex-snapshot
A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing
inferred← citeshttps://doi.org/10.3390/s21020379openalex-snapshot
Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor
inferred← citeshttps://doi.org/10.3390/s21186066openalex-snapshot
Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
inferred← citeshttps://doi.org/10.3390/s21196602openalex-snapshot
An LC Wireless Passive Pressure Sensor Based on Single-Crystal MgO MEMS Processing Technique for High Temperature Applications
inferred← citeshttps://doi.org/10.3788/gzxb20245311.1106002openalex-snapshot
单晶氧化镁高温光纤传感技术应用方法研究
inferred← citeshttps://doi.org/10.4028/www.scientific.net/kem.733.3openalex-snapshot
Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film
inferred← citeshttps://doi.org/10.5281/zenodo.3373746openalex-snapshot
Thermal Conductivity of Zincblende Crystals
inferred← citeshttps://doi.org/10.5772/60970openalex-snapshot
Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.