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A Corrugated 4H-SiC Piezoresistive MEMS Pressure Sensor for High-Temperature Applications: Structural Optimization, Thermal Stability and Noise Performance Analysis

https://doi.org/10.2139/ssrn.7499339
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s10825-018-1223-8openalex-snapshot
Analytical modeling and simulation of MEMS piezoresistive pressure sensors with a square silicon carbide diaphragm as the primary sensing element under different loading conditions
inferredcites →https://doi.org/10.1007/s10853-024-10260-zopenalex-snapshot
Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors
inferredcites →https://doi.org/10.1007/s12633-021-01330-xopenalex-snapshot
Research on Temperature Zero Drift of SiC Piezoresistive Pressure Sensor Based on Asymmetric Wheatstone Bridge
inferredcites →https://doi.org/10.1016/0038-1101(96)00045-7openalex-snapshot
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
inferredcites →https://doi.org/10.1016/j.jallcom.2018.07.299openalex-snapshot
High-temperature mechanical and thermodynamic properties of silicon carbide polytypes
inferredcites →https://doi.org/10.1016/j.physb.2026.418849openalex-snapshot
Thermally assisted interface engineering of optical and dielectric properties of amorphous SiC thin films
inferredcites →https://doi.org/10.1016/j.sna.2009.02.031openalex-snapshot
A wafer-scale encapsulated RF MEMS switch with a stress-reduced corrugated diaphragm
inferredcites →https://doi.org/10.1016/j.sna.2017.06.009openalex-snapshot
InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments
inferredcites →https://doi.org/10.1016/j.tsf.2011.04.224openalex-snapshot
Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C
inferredcites →https://doi.org/10.1016/s1369-7021(07)70348-6openalex-snapshot
Prospects for SiC electronics and sensors
inferredcites →https://doi.org/10.1021/acssensors.3c00338openalex-snapshot
Square Membrane Resonators Supporting Degenerate Modes of Vibration for High-Throughput Mass Spectrometry of Single Bacterial Cells
inferredcites →https://doi.org/10.1063/1.337456openalex-snapshot
Thermal expansion of the hexagonal (4H) polytype of SiC
inferredcites →https://doi.org/10.1088/0022-3727/40/20/s17openalex-snapshot
SiC sensors: a review
inferredcites →https://doi.org/10.1088/0960-1317/14/12/001openalex-snapshot
Design optimization of a piezoresistive pressure sensor considering the output signal-to-noise ratio
inferredcites →https://doi.org/10.1109/16.662776openalex-snapshot
Characterization of highly doped n- and p-type 6H-SiC piezoresistors
inferredcites →https://doi.org/10.1109/16.748877openalex-snapshot
Current status of silicon carbide based high-temperature gas sensors
inferredcites →https://doi.org/10.1109/5.704265openalex-snapshot
Silicon carbide MEMS for harsh environments
inferredcites →https://doi.org/10.1109/84.846703openalex-snapshot
1/f noise considerations for the design and process optimization of piezoresistive cantilevers
inferredcites →https://doi.org/10.1109/jproc.2002.1021571openalex-snapshot
High-temperature electronics - a role for wide bandgap semiconductors?
inferredcites →https://doi.org/10.1109/led.2014.2379262openalex-snapshot
4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery
inferredcites →https://doi.org/10.1155/2014/715167openalex-snapshot
The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature
inferredcites →https://doi.org/10.1155/2015/352036openalex-snapshot
Design and Optimization of a Low Power Pressure Sensor for Wireless Biomedical Applications
inferredcites →https://doi.org/10.1364/ao.393353openalex-snapshot
Sapphire Fabry–Perot interferometer for high-temperature pressure sensing
inferredcites →https://doi.org/10.4028/www.scientific.net/msf.527-529.699openalex-snapshot
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
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