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Impact of growth parameters on selective area MOVPE of high-quality InP on on-axis Si (001)substrates

https://doi.org/10.2139/ssrn.7589338
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inferredcites →https://doi.org/10.1002/pssa.2210450125openalex-snapshot
Stacking fault energy and ionicity of cubic III–V compounds
inferredcites →https://doi.org/10.1016/0022-0248(94)90727-7openalex-snapshot
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
inferredcites →https://doi.org/10.1016/j.jcrysgro.2010.07.039openalex-snapshot
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.01.027openalex-snapshot
Effects of growth temperature on surface morphology of InP grown on patterned Si(0 0 1) substrates
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.11.077openalex-snapshot
MOVPE growth of GaP on Si with As initial coverage
inferredcites →https://doi.org/10.1016/j.jcrysgro.2024.127903openalex-snapshot
Microstructural Characterization of InP Films on SOI (001) Substrates Grown by Selective Lateral Metal-Organic Vapor-Phase Epitaxy
inferredcites →https://doi.org/10.1016/j.solmat.2010.12.021openalex-snapshot
Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications
inferredcites →https://doi.org/10.1021/acs.cgd.0c00988openalex-snapshot
Antiphase Boundary Free InP Microridges on (001) Silicon by Selective Area Heteroepitaxy
inferredcites →https://doi.org/10.1038/nphoton.2015.199openalex-snapshot
Room-temperature InP distributed feedback laser array directly grown on silicon
inferredcites →https://doi.org/10.1063/1.1558963openalex-snapshot
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates
inferredcites →https://doi.org/10.1063/1.335363openalex-snapshot
Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.343113openalex-snapshot
Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates
inferredcites →https://doi.org/10.1063/1.4815959openalex-snapshot
Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
inferredcites →https://doi.org/10.1063/1.4862044openalex-snapshot
Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
inferredcites →https://doi.org/10.1063/1.4972394openalex-snapshot
Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)
inferredcites →https://doi.org/10.1063/1.98117openalex-snapshot
Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
inferredcites →https://doi.org/10.1103/physrevmaterials.4.053401openalex-snapshot
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
inferredcites →https://doi.org/10.1103/physrevmaterials.4.123403openalex-snapshot
Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth
inferredcites →https://doi.org/10.1109/jstqe.2026.3707799openalex-snapshot
Self-Injection-Locked Heterogeneous InP/SiN Lasers at Wafer Scale
inferredcites →https://doi.org/10.1109/mnano.2019.2891369openalex-snapshot
Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers
inferredcites →https://doi.org/10.1149/1.3096551openalex-snapshot
Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping
inferredcites →https://doi.org/10.1364/oe.26.022389openalex-snapshot
InP-based quantum cascade lasers monolithically integrated onto silicon
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