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Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping
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inferred← citeshttps://doi.org/10.1002/adfm.201400105openalex-snapshot
Novel Heterogeneous Integration Technology of III–V Layers and InGaAs FinFETs to Silicon
inferred← citeshttps://doi.org/10.1002/pssa.70492openalex-snapshot
Defect‐Control Strategies for III–V Heteroepitaxy on Silicon
inferred← citeshttps://doi.org/10.1007/s11664-011-1623-zopenalex-snapshot
Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2010.07.039openalex-snapshot
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2014.07.052openalex-snapshot
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2015.05.033openalex-snapshot
Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped trenches on Si
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2024.127903openalex-snapshot
Microstructural Characterization of InP Films on SOI (001) Substrates Grown by Selective Lateral Metal-Organic Vapor-Phase Epitaxy
inferred← citeshttps://doi.org/10.1016/j.pcrysgrow.2017.10.001openalex-snapshot
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
inferred← citeshttps://doi.org/10.1016/j.pquantelec.2021.100316openalex-snapshot
Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics
inferred← citeshttps://doi.org/10.1021/acs.cgd.0c00988openalex-snapshot
Antiphase Boundary Free InP Microridges on (001) Silicon by Selective Area Heteroepitaxy
inferred← citeshttps://doi.org/10.1063/1.3491554openalex-snapshot
Selective area growth of high quality InP on Si (001) substrates
inferred← citeshttps://doi.org/10.1063/1.4815959openalex-snapshot
Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
inferred← citeshttps://doi.org/10.1063/1.4862044openalex-snapshot
Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
inferred← citeshttps://doi.org/10.1063/1.5047945openalex-snapshot
Perspective: Fundamentals of coalescence-related dislocations, applied to selective-area growth and other epitaxial films
inferred← citeshttps://doi.org/10.1109/asmc.2014.6847022openalex-snapshot
Progress on background signal analysis of bare wafer inspection systems based on light scattering for III/V epitaxial growth monitoring
inferred← citeshttps://doi.org/10.1149/1.3489355openalex-snapshot
Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates
inferred← citeshttps://doi.org/10.1149/1.3571248openalex-snapshot
Selective Area Growth of InP and Defect Elimination on Si (001) Substrates
inferred← citeshttps://doi.org/10.1149/2.0181607jssopenalex-snapshot
Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor
inferred← citeshttps://doi.org/10.1149/2.0311507jssopenalex-snapshot
Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width
inferred← citeshttps://doi.org/10.1149/2.041204jesopenalex-snapshot
In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures
inferred← citeshttps://doi.org/10.1149/2.051203jesopenalex-snapshot
Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation
inferred← citeshttps://doi.org/10.1587/transele.e101.c.537openalex-snapshot
Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
inferred← citeshttps://doi.org/10.2139/ssrn.7589338openalex-snapshot
Impact of growth parameters on selective area MOVPE of high-quality InP on on-axis Si (001)substrates
inferred← citeshttps://doi.org/10.3390/cryst12040476openalex-snapshot
Selective Growth of Energy-Band-Controllable In1−xGaxAsyP1−y Submicron Wires in V-Shaped Trench on Si
inferred← citeshttps://doi.org/10.3390/electronicmat2020008openalex-snapshot
Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium
inferred← citeshttps://doi.org/10.3390/nano12050741openalex-snapshot
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
inferred← citeshttps://doi.org/10.35848/1347-4065/ad189dopenalex-snapshot
Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth
inferred← citeshttps://doi.org/10.3938/jkps.77.592openalex-snapshot
Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy
inferred← citeshttps://doi.org/10.70675/c6fce00fzccc8z4ae2zb69czf33724453837openalex-snapshot
InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE
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