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Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

https://doi.org/10.3390/electronics11131972

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssc.201001032openalex-snapshot

Study of edge termination structures for high power GaN Schottky diodes

inferredcites →https://doi.org/10.1016/j.jcrysgro.2019.125421openalex-snapshot

Design and fabrication of high performance 4H-SiC TJBS diodes

inferredcites →https://doi.org/10.1016/j.mee.2017.11.021openalex-snapshot

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

inferredcites →https://doi.org/10.1016/j.mssp.2017.09.033openalex-snapshot

Materials and processing issues in vertical GaN power electronics

inferredcites →https://doi.org/10.1016/j.nimb.2015.07.095openalex-snapshot

Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

inferredcites →https://doi.org/10.1016/j.sse.2016.11.008openalex-snapshot

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

inferredcites →https://doi.org/10.1063/1.371939openalex-snapshot

Depletion region effects in Mg-doped GaN

inferredcites →https://doi.org/10.1063/1.4993201openalex-snapshot

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

inferredcites →https://doi.org/10.1063/1.5088168openalex-snapshot

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

inferredcites →https://doi.org/10.1063/5.0022198openalex-snapshot

Progress on and challenges of p-type formation for GaN power devices

inferredcites →https://doi.org/10.1103/physrev.109.1537openalex-snapshot

Ionization Rates for Electrons and Holes in Silicon

inferredcites →https://doi.org/10.1109/iedm.2016.7838386openalex-snapshot

Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

inferredcites →https://doi.org/10.1109/led.2017.2720689openalex-snapshot

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

inferredcites →https://doi.org/10.1109/led.2017.2779445openalex-snapshot

GaN-on-Si Quasi-Vertical Power MOSFETs

inferredcites →https://doi.org/10.1109/led.2018.2808684openalex-snapshot

High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

inferredcites →https://doi.org/10.1109/led.2018.2841959openalex-snapshot

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

inferredcites →https://doi.org/10.1109/led.2021.3078477openalex-snapshot

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

inferredcites →https://doi.org/10.1109/ted.2008.926638openalex-snapshot

Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers

inferredcites →https://doi.org/10.1109/ted.2014.2320979openalex-snapshot

Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

inferredcites →https://doi.org/10.1109/ted.2017.2662702openalex-snapshot

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

inferredcites →https://doi.org/10.1109/ted.2021.3109845openalex-snapshot

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

inferredcites →https://doi.org/10.1109/tpel.2013.2268900openalex-snapshot

A Survey of Wide Bandgap Power Semiconductor Devices

inferredcites →https://doi.org/10.1109/tpel.2021.3076694openalex-snapshot

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability

inferredcites →https://doi.org/10.1149/2.0041701jssopenalex-snapshot

Vertical GaN Junction Barrier Schottky Diodes

inferredcites →https://doi.org/10.35848/1882-0786/abf054openalex-snapshot

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

inferredcites →https://doi.org/10.35848/1882-0786/ac09ffopenalex-snapshot

p-NiO junction termination extensions for GaN power devices

inferredcites →https://doi.org/10.7567/1882-0786/ab3297openalex-snapshot

Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage

inferredcites →https://doi.org/10.7567/apex.10.061003openalex-snapshot

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

inferredcites →https://doi.org/10.7567/apex.10.121002openalex-snapshot

Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V

inferredcites →https://doi.org/10.7567/jjap.56.121301openalex-snapshot

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4611512openalex-extracted

Assessment of Thermo-Mechanical Phenomena in Si-Based Diodes Via Operando Confocal Raman Microscopy

inferred← citeshttps://doi.org/10.2139/ssrn.4612278openalex-extracted

Assessment of Thermo-Mechanical Phenomena in Si-Based Diodes Via Operando Confocal Raman Microscopy

inferred← citeshttps://doi.org/10.1016/j.measurement.2024.114425openalex-snapshot

Assessment of thermo-mechanical phenomena in Si-based diodes via operando confocal Raman microscopy

inferred← citeshttps://doi.org/10.1016/j.mejo.2024.106399openalex-snapshot

Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performance

inferred← citeshttps://doi.org/10.1016/j.molstruc.2023.137214openalex-snapshot

Trapping of toxic heavy metals from water by GN–nanocage: Application of nanomaterials for contaminant removal technique

inferred← citeshttps://doi.org/10.1063/5.0312199openalex-snapshot

1 kV vertical Al0.51Ga0.49N power Schottky diodes

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