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Assessment of Thermo-Mechanical Phenomena in Si-Based Diodes Via Operando Confocal Raman Microscopy

https://doi.org/10.2139/ssrn.4611512
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Independence verification and decoupling measurement of Raman shift coefficients with coexisting temperature and stress
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Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy
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Effects of phosphorus on stress of multi-stacked polysilicon film and single crystalline silicon
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Anharmonic effects in light scattering due to optical phonons in silicon
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Raman spectroscopy of heavily doped polycrystalline silicon thin films
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