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Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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LUCIA, a microfocus soft XAS beamline
inferredcites →https://doi.org/10.1038/nature02756openalex-snapshot
Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
inferredcites →https://doi.org/10.1038/nmat1614openalex-snapshot
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
inferredcites →https://doi.org/10.1038/nmat1627openalex-snapshot
Ultra-high-density phase-change storage and memory
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Electric-pulse-induced reversible resistance change effect in magnetoresistive films
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Reproducible switching effect in thin oxide films for memory applications
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From molecules to solids with the DMol3 approach
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Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
inferredcites →https://doi.org/10.1063/1.1389522openalex-snapshot
Electrical current distribution across a metal–insulator–metal structure during bistable switching
inferredcites →https://doi.org/10.1063/1.1768305openalex-snapshot
Field-induced resistive switching in metal-oxide interfaces
inferredcites →https://doi.org/10.1063/1.1812580openalex-snapshot
Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
inferredcites →https://doi.org/10.1063/1.1831560openalex-snapshot
Reproducible resistance switching in polycrystalline NiO films
inferredcites →https://doi.org/10.1103/physrev.134.a442openalex-snapshot
Electronic Transport in Strontium Titanate
inferredcites →https://doi.org/10.1103/physrevb.72.155102openalex-snapshot
Valence states of Cr and the insulator-to-metal transition in Cr-doped SrTiO3
inferredcites →https://doi.org/10.1103/physrevlett.21.1450openalex-snapshot
Reversible Electrical Switching Phenomena in Disordered Structures
inferredcites →https://doi.org/10.1103/physrevlett.62.2317openalex-snapshot
Universal Correlations between Tc and nsm* (Carrier Density over Effective Mass) in High- Tc Cuprate Superconductors
inferredcites →https://doi.org/10.1103/physrevlett.88.075508openalex-snapshot
Localized Metallic Conductivity and Self-Healing during Thermal Reduction of SrTiO3
inferredcites →https://doi.org/10.1103/physrevlett.92.178302openalex-snapshot
Nonvolatile Memory with Multilevel Switching: A Basic Model
inferredcites →https://doi.org/10.1103/physrevlett.95.266403openalex-snapshot
Interfaces of Correlated Electron Systems: Proposed Mechanism for Colossal Electroresistance
inferredcites →https://doi.org/10.1103/revmodphys.70.1039openalex-snapshot
Metal-insulator transitions
inferredcites →https://doi.org/10.1109/jproc.2003.811804openalex-snapshot
Magnetoresistive random access memory using magnetic tunnel junctions
inferredcites →https://doi.org/10.1109/jproc.2003.811807openalex-snapshot
Magnetically engineered spintronic sensors and memory
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Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO3 microribbons
inferred← citeshttps://doi.org/10.1016/j.cplett.2017.12.072openalex-snapshot
Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics
inferred← citeshttps://doi.org/10.1016/j.ijhydene.2024.08.436openalex-snapshot
Oxygen vacancies and interfacial engineering of RuO2/CeO2-NC heterojunction for pH-universal hydrogen evolution reaction
inferred← citeshttps://doi.org/10.1016/j.inoche.2025.115293openalex-snapshot
Synthesis of SrTiO3 perovskite structure for batteries, supercapacitors and fuel cells applications: a review
inferred← citeshttps://doi.org/10.1016/j.jallcom.2012.03.014openalex-snapshot
Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates
inferred← citeshttps://doi.org/10.1016/j.jallcom.2015.07.040openalex-snapshot
Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film
inferred← citeshttps://doi.org/10.1016/j.jallcom.2015.09.017openalex-snapshot
Effect of crystallization on the band structure and photoelectric property of SrTiO3 sol–gel derived thin film
inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.08.269openalex-snapshot
Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlO thin films
inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.09.248openalex-snapshot
Electric field modulation of resistive switching and related magnetism in the Pt/NiFe2O4/Nb:SrTiO3 heterostructures
inferred← citeshttps://doi.org/10.1016/j.jallcom.2017.10.251openalex-snapshot
Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
inferred← citeshttps://doi.org/10.1016/j.jallcom.2018.03.317openalex-snapshot
Electronic structure and structural properties of Cr-doped SrTiO3 – Theoretical investigation
inferred← citeshttps://doi.org/10.1016/j.jallcom.2019.03.193openalex-snapshot
Controlling of resistive switching and magnetism through Cu2+ ions substitution in nickel ferrite based nonvolatile memory
inferred← citeshttps://doi.org/10.1016/j.jallcom.2019.152738openalex-snapshot
Resistive switching behaviors of Au/CZO/FTO/glass heterostructures grown by magnetron sputtering
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.157975openalex-snapshot
Local and electronic structure of Sr1-Gd TiO3 probed by X-ray absorption spectroscopy
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.158035openalex-snapshot
Effect of Ag doping on bipolar switching operation in molybdenum trioxide (MoO3) nanostructures for non-volatile memory
inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.164569openalex-snapshot
Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices
inferred← citeshttps://doi.org/10.1016/j.jallcom.2025.181854openalex-snapshot
Mechanisms of chromium (Cr) doping on crystal structure and magnetic properties of oriented polycrystalline M-type hexaferrites: A comprehensive study using multiple materials characterization techniques
inferred← citeshttps://doi.org/10.1016/j.jallcom.2026.189508openalex-snapshot
Conductive filament dynamics in cerium-doped ZnFe₂O₄ thin films for enhanced unipolar resistive switching in RRAM devices
inferred← citeshttps://doi.org/10.1016/j.jcis.2017.01.095openalex-snapshot
Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films
inferred← citeshttps://doi.org/10.1016/j.jcou.2015.10.004openalex-snapshot
Synthesis of Cr-doped SrTiO3 photocatalyst and its application in visible-light-driven transformation of CO2 into CH4
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2022.126524openalex-snapshot
Interfacial control of SrTiO3/Si(0 0 1) epitaxy and its effect on physical and optical properties
inferred← citeshttps://doi.org/10.1016/j.jpcs.2013.10.003openalex-snapshot
EPR investigation of the trivalent chromium complexes in SrTiO3
inferred← citeshttps://doi.org/10.1016/j.matchemphys.2016.06.059openalex-snapshot
Switchable photovoltaic effect in Au/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3 heterostructures
inferred← citeshttps://doi.org/10.1016/j.materresbull.2015.02.051openalex-snapshot
Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films
inferred← citeshttps://doi.org/10.1016/j.materresbull.2020.111160openalex-snapshot
Electromigration of oxygen and resistive state transitions in sub-micron width long strip of La 0.85 Sr 0.15 MnO 3 connected to an engineered oxygen source
inferred← citeshttps://doi.org/10.1016/j.mee.2008.09.026openalex-snapshot
Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8
inferred← citeshttps://doi.org/10.1016/j.mee.2012.07.082openalex-snapshot
Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices
inferred← citeshttps://doi.org/10.1016/j.mejo.2017.12.013openalex-snapshot
A high-precision time-domain RRAM state control approach
inferred← citeshttps://doi.org/10.1016/j.micron.2009.11.010openalex-snapshot
In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides
inferred← citeshttps://doi.org/10.1016/j.mseb.2007.07.059openalex-snapshot
Resistive switching in Cr-doped SrTiO3: An X-ray absorption spectroscopy study
inferred← citeshttps://doi.org/10.1016/j.mseb.2009.11.022openalex-snapshot
Device size dependence of resistance switching performance in metal/manganite/metal trilayers
inferred← citeshttps://doi.org/10.1016/j.mseb.2017.12.025openalex-snapshot
Enhanced resistive switching and magnetic properties of Gd-doped NiFe 2 O 4 thin films prepared by chemical solution deposition method
inferred← citeshttps://doi.org/10.1016/j.mssp.2022.106497openalex-snapshot
Bipolar resistive switching with improved memory window in W/ZnFe2O4/Pt devices
inferred← citeshttps://doi.org/10.1016/j.mtchem.2024.102251openalex-snapshot
Element-tailored quenching methods: Phase-defective K0.5Mn1-Cr O2 cathode materials for potassium ion batteries
inferred← citeshttps://doi.org/10.1016/j.mtcomm.2023.105593openalex-snapshot
Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O3 thin film memristor
inferred← citeshttps://doi.org/10.1016/j.mtelec.2023.100054openalex-snapshot
Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104519openalex-snapshot
Fast and reversible zinc ion intercalation in Al-ion modified hydrated vanadate
inferred← citeshttps://doi.org/10.1016/j.physb.2009.06.111openalex-snapshot
Electric pulse-induced resistive switching in ceramic interfaces
inferred← citeshttps://doi.org/10.1016/j.spmi.2018.03.036openalex-snapshot
High-performance flexible resistive memory devices based on Al2O3:GeOx composite
inferred← citeshttps://doi.org/10.1016/j.ssc.2020.113930openalex-snapshot
Persistent photoconductivity at LaVO3–SrTiO3 interface
inferred← citeshttps://doi.org/10.1016/j.sse.2012.05.007openalex-snapshot
Hopping and trap controlled conduction in Cr-doped SrTiO3 thin films
inferred← citeshttps://doi.org/10.1016/j.sse.2013.10.023openalex-snapshot
Resistive switching in lateral junctions with nanometer separated electrodes
inferred← citeshttps://doi.org/10.1016/j.sse.2015.03.014openalex-snapshot
Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites
inferred← citeshttps://doi.org/10.1016/j.ssi.2016.09.001openalex-snapshot
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
inferred← citeshttps://doi.org/10.1016/j.ssi.2018.09.003openalex-snapshot
Tailoring the switching performance of resistive switching SrTiO3 devices by SrO interface engineering
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2008.06.133openalex-snapshot
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
inferred← citeshttps://doi.org/10.1016/j.susc.2020.121683openalex-snapshot
Adsorption and diffusion of Au, Pt, and Co adatoms on SrTiO3(001) surfaces: A density functional theory study
inferred← citeshttps://doi.org/10.1016/j.tsf.2010.07.075openalex-snapshot
Unipolar resistive switching characteristics in Co3O4 films
inferred← citeshttps://doi.org/10.1016/j.tsf.2010.12.149openalex-snapshot
Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering
inferred← citeshttps://doi.org/10.1016/j.tsf.2013.04.028openalex-snapshot
Improvement of resistive switching in ZnO film by Ti doping
inferred← citeshttps://doi.org/10.1016/j.tsf.2016.10.072openalex-snapshot
Unipolar resistance switching behavior of Pr4O7-Pr2CuO4- thin films
inferred← citeshttps://doi.org/10.1017/s1431927621013349openalex-snapshot
In-situ TEM Observations of Resistance Switching in Strontium Titanate Devices
inferred← citeshttps://doi.org/10.1021/acs.chemmater.0c00807openalex-snapshot
Near-Infrared Persistent Luminescence in a Cr3+-Doped Perovskite for Low-Irradiance Imaging
inferred← citeshttps://doi.org/10.1021/acs.chemmater.6b00049openalex-snapshot
Tunable Electronic Structure and Surface Defects in Chromium-Doped Colloidal SrTiO3−δ Nanocrystals
inferred← citeshttps://doi.org/10.1021/acs.chemmater.7b00220openalex-snapshot
Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b01502openalex-snapshot
Voltage-Controlled Oxygen Non-Stoichiometry in SrCoO3−δ Thin Films
inferred← citeshttps://doi.org/10.1021/acs.est.9b07891openalex-snapshot
Sterilization of Escherichia coli by Photothermal Synergy of WO3–x/C Nanosheet under Infrared Light Irradiation
inferred← citeshttps://doi.org/10.1021/acs.inorgchem.6b00240openalex-snapshot
Structure and Catalytic Activity of Cr-Doped BaTiO3 Nanocatalysts Synthesized by Conventional Oxalate and Microwave Assisted Hydrothermal Methods
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5b04627openalex-snapshot
Determining the Location and Role of Al in Al-Modified TiO2 Nanoparticles Using Low-Temperature Heat Capacity, Electron Energy-Loss Spectroscopy, and X-ray Diffraction
inferred← citeshttps://doi.org/10.1021/acs.jpcc.7b04352openalex-snapshot
Correlation between Cr3+ Luminescence and Oxygen Vacancy Disorder in Strontium Titanate under MeV Ion Irradiation
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b02951openalex-snapshot
Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00719openalex-snapshot
Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices
inferred← citeshttps://doi.org/10.1021/acsaelm.1c01163openalex-snapshot
Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01323openalex-snapshot
Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
inferred← citeshttps://doi.org/10.1021/acsami.1c13210openalex-snapshot
Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem
inferred← citeshttps://doi.org/10.1021/acsami.6b13416openalex-snapshot
Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories
inferred← citeshttps://doi.org/10.1021/acsami.6b15149openalex-snapshot
Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device
inferred← citeshttps://doi.org/10.1021/acsami.7b16214openalex-snapshot
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure
inferred← citeshttps://doi.org/10.1021/acsami.8b12019openalex-snapshot
Tuning Oxygen Vacancy Diffusion through Strain in SrTiO3 Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.8b15769openalex-snapshot
Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
inferred← citeshttps://doi.org/10.1021/acsami.9b08146openalex-snapshot
In Situ TEM Study of the Amorphous-to-Crystalline Transition during Dielectric Breakdown in TiO2 Film
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