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Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories

https://doi.org/10.1021/acsami.8b15769
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO3
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Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
inferredcites →https://doi.org/10.1002/adma.201700527openalex-snapshot
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inferredcites →https://doi.org/10.1002/adma.201704002openalex-snapshot
Organic–Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses
inferredcites →https://doi.org/10.1002/adma.201800327openalex-snapshot
Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching
inferredcites →https://doi.org/10.1002/admi.201700131openalex-snapshot
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inferredcites →https://doi.org/10.1038/nmat4014openalex-snapshot
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inferredcites →https://doi.org/10.1038/nnano.2008.160openalex-snapshot
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inferredcites →https://doi.org/10.1038/nnano.2009.456openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.3077310openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.3624472openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.3671565openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.4754011openalex-snapshot
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inferredcites →https://doi.org/10.1088/0957-4484/21/42/425205openalex-snapshot
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inferredcites →https://doi.org/10.1088/0957-4484/22/25/254013openalex-snapshot
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inferredcites →https://doi.org/10.1088/0957-4484/22/37/379502openalex-snapshot
Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
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First Principles Analysis of the Stability and Diffusion of Oxygen Vacancies in Metal Oxides

What points at this work

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Recent advances in resistive switching memory devices based on diverse material platforms for next generation electronics
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Recent advances in halide perovskite material classes for field-effect transistors
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Resistive switching memories featuring neuromorphic functionality for advanced wearable electronic platforms
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Ion migration and interface engineering in emerging halide perovskite technologies for enhanced stability, mobility, and device optimization in FETs and memory devices
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Lead-free all-inorganic halide perovskites for resistive switching memory: Mechanisms and emerging applications
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Halide perovskite memristors for energy-efficient in-memory computing: Current status and challenges toward crossbar integration
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Tuning the memory and synaptic functions through rational halide-alloying in Cs3Bi2I9 dimer-type perovskite-based memristor
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Multilevel halide perovskite memristors based on optical & electrical resistive switching effects
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Organic-Inorganic Fapbbr3 Perovskite Based Flexible Optoelectronic Memory Device for Light-Induced Multi Level Resistive Switching Application
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Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses
inferred← citeshttps://doi.org/10.1016/j.mattod.2026.103213openalex-snapshot
Advanced artificial synaptic memristor for visual neuromorphic computing: From materials to system
inferred← citeshttps://doi.org/10.1016/j.memori.2026.100140openalex-snapshot
Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis
inferred← citeshttps://doi.org/10.1016/j.mseb.2022.115904openalex-snapshot
Fabrication of C12H28ClN-assisted perovskites thin films with micrometer-sized grains via low-temperature hot-casting in ambient air for resistive memory device application
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108718openalex-snapshot
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109951openalex-snapshot
Effects of physical vapor deposition methods on the microstructure of CuI and directional transport in resistive random access memories
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Ion dynamics in metal halide perovskites for resistive-switching memory and neuromorphic memristors
inferred← citeshttps://doi.org/10.1016/j.mtener.2024.101692openalex-snapshot
A mini review of recent progress on halide perovskite memristor devices: materials science, challenges and applications
inferred← citeshttps://doi.org/10.1016/j.mtnano.2023.100449openalex-snapshot
Heterogeneous interface engineering enabling homogeneous metal halide perovskite nanowires for artificial synapses
inferred← citeshttps://doi.org/10.1016/j.mtphys.2022.100667openalex-snapshot
Halide perovskite based synaptic devices for neuromorphic systems
inferred← citeshttps://doi.org/10.1016/j.mtphys.2023.101264openalex-snapshot
Controllable analog-to-digital bipolar resistive switching behavior and mechanism analysis in δ-MnO2-based memristor
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104497openalex-snapshot
Graphene-mediated enhanced Raman scattering and coherent light lasing from CsPbI3 perovskite nanorods
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104616openalex-snapshot
Lead-free monocrystalline perovskite resistive switching device for temporal information processing
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Lead-free metal halide perovskites as the rising star in photocatalysis: The past, present, and prospective
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Halide perovskite single crystals for resistive switching
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Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors
inferred← citeshttps://doi.org/10.1016/j.ssi.2025.116816openalex-snapshot
Harnessing ion migration in halide perovskites: Implication and applications
inferred← citeshttps://doi.org/10.1021/acs.jpcc.0c11016openalex-snapshot
Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing
inferred← citeshttps://doi.org/10.1021/acs.jpcc.1c02203openalex-snapshot
Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device
inferred← citeshttps://doi.org/10.1021/acs.jpcc.4c01184openalex-snapshot
In-Situ Probing the Degradation Behavior of the Organic–Inorganic Hybrid Perovskite Film by Scanning Tunneling Microscopy
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5c08325openalex-snapshot
Resistive Switching Behavior in Lead-Free Double Perovskite Cs 2 SnCl 6 for Multilevel Flexible Device Application
inferred← citeshttps://doi.org/10.1021/acs.jpclett.0c03763openalex-snapshot
Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory
inferred← citeshttps://doi.org/10.1021/acs.jpclett.1c02332openalex-snapshot
Halide Perovskites for Memristive Data Storage and Artificial Synapses
inferred← citeshttps://doi.org/10.1021/acs.jpclett.1c03408openalex-snapshot
Halide Perovskites for Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c01039openalex-snapshot
Unraveling the Phase Transition and Luminescence Tuning of Pb-Free Cs–Cu–I Perovskites Enabled by Reaction Temperature and Polar Solvent
inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c01303openalex-snapshot
Metal Halide Perovskite-Based Memristors for Emerging Memory Applications
inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c03669openalex-snapshot
Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process
inferred← citeshttps://doi.org/10.1021/acs.jpclett.4c01664openalex-snapshot
Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact
inferred← citeshttps://doi.org/10.1021/acs.jpclett.4c02170openalex-snapshot
Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
inferred← citeshttps://doi.org/10.1021/acs.jpclett.5c03606openalex-snapshot
Artificial Synaptic Behavior of Lead-Free Cu 3 Sb 2 I 9 Perovskite Memristors
inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c00834openalex-snapshot
Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.2c01272openalex-snapshot
Ambient Stable All Inorganic CsCu2I3 Artificial Synapses for Neurocomputing
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00253openalex-snapshot
Artificial Synapse Based on a δ-FAPbI 3 /Atomic-Layer-Deposited SnO 2 Bilayer Memristor
inferred← citeshttps://doi.org/10.1021/acsabm.4c00085openalex-snapshot
Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00130openalex-snapshot
Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00674openalex-snapshot
Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00719openalex-snapshot
Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00201openalex-snapshot
Synthetic Powder-Based Thin (<0.1 μm) Cs 3 Bi 2 Br 9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00495openalex-snapshot
A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01316openalex-snapshot
Reliable BiI3-Based Resistive Random-Access Memory Devices with a High On/Off Ratio
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01472openalex-snapshot
Effects of Halide Composition on Endurance and Retention Performance in Double Perovskite Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00122openalex-snapshot
Synthesis of Cs2AgSbBr6 Double Perovskite for Resistive Switching and Neuromorphic Application
inferred← citeshttps://doi.org/10.1021/acsami.0c18038openalex-snapshot
Bifunctional Silver-Doped ZnO for Reliable and Stable Organic–Inorganic Hybrid Perovskite Memory
inferred← citeshttps://doi.org/10.1021/acsami.1c03433openalex-snapshot
Advances in Halide Perovskite Memristor from Lead-Based to Lead-Free Materials
inferred← citeshttps://doi.org/10.1021/acsami.2c15332openalex-snapshot
Enhanced Resistive Switching Performance through Air-Stable Cu 2 AgSbI 6 Thin Films for Flexible and Multilevel Storage Application
inferred← citeshttps://doi.org/10.1021/acsami.3c01450openalex-snapshot
MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time
inferred← citeshttps://doi.org/10.1021/acsami.4c09673openalex-snapshot
All-Inorganic CsPbBr3 Perovskite Planar-Type Memristors as Optoelectronic Synapses
inferred← citeshttps://doi.org/10.1021/acsami.5c09862openalex-snapshot
A Comprehensive Review of Electrochemical Metallization and Valence Change Mechanisms in Filamentary Resistive Switching of Halide Perovskite-Based Memory Devices
inferred← citeshttps://doi.org/10.1021/acsami.5c12762openalex-snapshot
Chloride Ion Vacancy-Mediated Multilevel Bipolar Resistive Switching in Lead-Free All-Inorganic Halide Perovskite Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.6c03660openalex-snapshot
Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors
inferred← citeshttps://doi.org/10.1021/acsami.9b17680openalex-snapshot
Resistive Switching in Nonperovskite-Phase CsPbI3 Film-Based Memory Devices
inferred← citeshttps://doi.org/10.1021/acsami.9b22918openalex-snapshot
Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsenergylett.2c02698openalex-snapshot
Leveraging Low-Energy Structural Thermodynamics in Halide Perovskites
inferred← citeshttps://doi.org/10.1021/acsnano.4c07673openalex-snapshot
Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array
inferred← citeshttps://doi.org/10.1021/acsomega.2c03206openalex-snapshot
Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites
inferred← citeshttps://doi.org/10.1038/s41427-020-0202-2openalex-snapshot
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
inferred← citeshttps://doi.org/10.1038/s41467-021-23871-wopenalex-snapshot
Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
inferred← citeshttps://doi.org/10.1038/s41565-024-01790-3openalex-snapshot
Linearly programmable two-dimensional halide perovskite memristor arrays for neuromorphic computing
inferred← citeshttps://doi.org/10.1039/c9ra10791fopenalex-snapshot
Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI 3 (M = Pb, Sn)
inferred← citeshttps://doi.org/10.1039/c9tc02233copenalex-snapshot
Metal halide perovskites for resistive switching memory devices and artificial synapses
inferred← citeshttps://doi.org/10.1039/d0cs00569jopenalex-snapshot
Metal-containing organic compounds for memory and data storage applications
inferred← citeshttps://doi.org/10.1039/d0nr04220jopenalex-snapshot
All-inorganic copper( i )-based ternary metal halides: promising materials toward optoelectronics
inferred← citeshttps://doi.org/10.1039/d0ta06248kopenalex-snapshot
Impact of local structure on halogen ion migration in layered methylammonium copper halide memory devices
inferred← citeshttps://doi.org/10.1039/d0tc03287eopenalex-snapshot
High performance flexible memristors based on a lead free AgBiI 4 perovskite with an ultralow operating voltage
inferred← citeshttps://doi.org/10.1039/d1cs00886bopenalex-snapshot
Nanostructured perovskites for nonvolatile memory devices
inferred← citeshttps://doi.org/10.1039/d1nr03245copenalex-snapshot
A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
inferred← citeshttps://doi.org/10.1039/d1qm00552aopenalex-snapshot
Photophysics in Cs 3 Cu 2 I 5 and CsCu 2 I 3
inferred← citeshttps://doi.org/10.1039/d1ta06484copenalex-snapshot
Resolving buried optoelectronic features in metal halide perovskites via modulation spectroscopy studies
inferred← citeshttps://doi.org/10.1039/d1tc03370kopenalex-snapshot
Strong Fermi-level pinning at metal contacts to halide perovskites
inferred← citeshttps://doi.org/10.1039/d2nr06370kopenalex-snapshot
Achieving adjustable digital-to-analog conversion in memristors with embedded Cs 2 AgSbBr 6 nanoparticles
inferred← citeshttps://doi.org/10.1039/d2nr06403kopenalex-snapshot
Halide perovskite photoelectric artificial synapses: materials, devices, and applications
inferred← citeshttps://doi.org/10.1039/d2nr06773kopenalex-snapshot
Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude
inferred← citeshttps://doi.org/10.1039/d2qm00614fopenalex-snapshot
Electrode dependence in halide perovskite memories: resistive switching behaviours
inferred← citeshttps://doi.org/10.1039/d3tc00350gopenalex-snapshot
Rare earth halide double perovskites for high-performance resistive random access memory
inferred← citeshttps://doi.org/10.1039/d3tc03580hopenalex-snapshot
A low power flexible halide perovskite-based threshold switching memristor as an artificial nociceptor
inferred← citeshttps://doi.org/10.1039/d4nr01395fopenalex-snapshot
Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices
inferred← citeshttps://doi.org/10.1039/d4nr04200jopenalex-snapshot
Crystallization control of Cu( i )-halide via thermal evaporation for improving resistive switching memory performance
inferred← citeshttps://doi.org/10.1039/d5cs01222hopenalex-snapshot
From solar cells to memristors: halide perovskites as a platform for neuromorphic electronics
inferred← citeshttps://doi.org/10.1039/d5dt02579fopenalex-snapshot
Halide perovskite-based memory devices and neuromorphic computing
inferred← citeshttps://doi.org/10.1039/d5ma00337gopenalex-snapshot
Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
inferred← citeshttps://doi.org/10.1039/d5ma00609kopenalex-snapshot
Single crystal halide perovskites for resistive switching memory devices and artificial synapse
inferred← citeshttps://doi.org/10.1039/d5ma00686dopenalex-snapshot
Two-dimensional halide perovskite memristors for resistive switching memory systems
inferred← citeshttps://doi.org/10.1039/d5ma00713eopenalex-snapshot
Toward AI-ready hardware: review of single-crystal halide perovskite FET fabrication and performance
inferred← citeshttps://doi.org/10.1063/5.0093943openalex-snapshot
Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application
inferred← citeshttps://doi.org/10.1063/5.0149389openalex-snapshot
Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory
inferred← citeshttps://doi.org/10.1063/5.0237386openalex-snapshot
Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications
inferred← citeshttps://doi.org/10.1063/5.0252837openalex-snapshot
Halide perovskites for emerging applications beyond photovoltaics: Recent progress and future prospects
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