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Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO 3 Thin‐Film Memristive Devices
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High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO3
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A Resistive Memory in Semiconducting BiFeO 3 Thin‐Film Capacitors
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Quantum Dot Light‐Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides (CsPbX 3 )
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All‐Inorganic Colloidal Perovskite Quantum Dots: A New Class of Lasing Materials with Favorable Characteristics
inferredcites →https://doi.org/10.1002/adma.201600859openalex-snapshot
Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
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Electrocrystallization: Fundamentals of Nucleation and Growth
inferredcites →https://doi.org/10.1016/j.mser.2014.06.002openalex-snapshot
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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Resistive switching in transition metal oxides
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Semiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent Properties
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First-Principles Study of Ion Diffusion in Perovskite Solar Cell Sensitizers
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Anomalous Hysteresis in Perovskite Solar Cells
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Electronic Processes in Ionic Crystals
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In situ observation of heat-induced degradation of perovskite solar cells
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Bright light-emitting diodes based on organometal halide perovskite
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Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency
inferredcites →https://doi.org/10.1039/c5ta06398aopenalex-snapshot
Inorganic caesium lead iodide perovskite solar cells
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Generalized colloidal synthesis of high-quality, two-dimensional cesium lead halide perovskite nanosheets and their applications in photodetectors
inferredcites →https://doi.org/10.1063/1.2204649openalex-snapshot
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
inferredcites →https://doi.org/10.1063/1.4864778openalex-snapshot
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inferredcites →https://doi.org/10.1088/0957-4484/22/25/254013openalex-snapshot
Temperature effects on the switching kinetics of a Cu–Ta 2 O 5 -based atomic switch
inferredcites →https://doi.org/10.1088/0957-4484/22/37/379502openalex-snapshot
Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
inferredcites →https://doi.org/10.1108/acmm.2003.12850eae.001openalex-snapshot
Electrochemical Methods: Fundamentals and Applications
inferredcites →https://doi.org/10.1109/led.2009.2025896openalex-snapshot
Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications
inferredcites →https://doi.org/10.1126/science.1228604openalex-snapshot
Efficient Hybrid Solar Cells Based on Meso-Superstructured Organometal Halide Perovskites
inferredcites →https://doi.org/10.1126/science.aag2700openalex-snapshot
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inferredcites →https://doi.org/10.1524/zpch.1992.175.part_1.063openalex-snapshot
Phase Diagrams of Quasibinary Systems of the Type: ABX3— A′BX3; ABX3— AB′X3, and ABX3— ABX′3; X = Halogen
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application
inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108718openalex-snapshot
Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104497openalex-snapshot
Graphene-mediated enhanced Raman scattering and coherent light lasing from CsPbI3 perovskite nanorods
inferred← citeshttps://doi.org/10.1016/j.nanoen.2020.104616openalex-snapshot
Lead-free monocrystalline perovskite resistive switching device for temporal information processing
inferred← citeshttps://doi.org/10.1016/j.nantod.2024.102184openalex-snapshot
Multi-ion controllable metal halide ionic structure for selective short- and long-term memorable synaptic devices
inferred← citeshttps://doi.org/10.1016/j.orgel.2018.12.042openalex-snapshot
Improving performance of Cs-based perovskite light-emitting diodes by dual additives consisting of polar polymer and n-type small molecule
inferred← citeshttps://doi.org/10.1016/j.orgel.2019.105518openalex-snapshot
Double-gate InZnO synaptic transistor with aqueous-solution-processed wheat flour electrolyte
inferred← citeshttps://doi.org/10.1016/j.orgel.2020.105749openalex-snapshot
Two-terminal photonic neuromorphic devices with short/long-term plasticity based on interface charge effects
inferred← citeshttps://doi.org/10.1016/j.solener.2021.05.033openalex-snapshot
Lead acetate precursors for preparing CsPbI3 light harvester layers of inorganic perovskite solar cells
inferred← citeshttps://doi.org/10.1016/j.sse.2021.108166openalex-snapshot
Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors
inferred← citeshttps://doi.org/10.1021/acs.cgd.8b00264openalex-snapshot
Low Temperature Solution-Processable Cesium Lead Bromide Microcrystals for Light Conversion
inferred← citeshttps://doi.org/10.1021/acs.chemmater.8b04771openalex-snapshot
Tetragonal Cs1.17In0.81Cl3: A Charge-Ordered Indium Halide Perovskite Derivative
inferred← citeshttps://doi.org/10.1021/acs.jpcc.1c02203openalex-snapshot
Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device
inferred← citeshttps://doi.org/10.1021/acs.jpcc.3c05703openalex-snapshot
Cs3Bi2Br9 Halide Perovskite Nanostructure/Polymer Composite Films Resistive Memory
inferred← citeshttps://doi.org/10.1021/acs.jpcc.7b12817openalex-snapshot
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH 3 NH 3 PbI 3 -Based Memory Device
inferred← citeshttps://doi.org/10.1021/acs.jpcc.9b06106openalex-snapshot
Influence of Work Function of Carrier Transport Materials with Perovskite on Switchable Photovoltaic Phenomena
inferred← citeshttps://doi.org/10.1021/acs.jpclett.1c02105openalex-snapshot
Advances in Flexible Memristors with Hybrid Perovskites
inferred← citeshttps://doi.org/10.1021/acs.jpclett.1c02332openalex-snapshot
Halide Perovskites for Memristive Data Storage and Artificial Synapses
inferred← citeshttps://doi.org/10.1021/acs.jpclett.2c01303openalex-snapshot
Metal Halide Perovskite-Based Memristors for Emerging Memory Applications
inferred← citeshttps://doi.org/10.1021/acs.jpclett.9b03181openalex-snapshot
Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories
inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c00834openalex-snapshot
Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.2c01272openalex-snapshot
Ambient Stable All Inorganic CsCu2I3 Artificial Synapses for Neurocomputing
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00253openalex-snapshot
Artificial Synapse Based on a δ-FAPbI 3 /Atomic-Layer-Deposited SnO 2 Bilayer Memristor
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00130openalex-snapshot
Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00674openalex-snapshot
Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00719openalex-snapshot
Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00201openalex-snapshot
Synthetic Powder-Based Thin (<0.1 μm) Cs 3 Bi 2 Br 9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01316openalex-snapshot
Reliable BiI3-Based Resistive Random-Access Memory Devices with a High On/Off Ratio
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00062openalex-snapshot
Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01394openalex-snapshot
Ion Migration in Metal Halide Perovskite Field-Effect Transistors
inferred← citeshttps://doi.org/10.1021/acsaelm.5c00380openalex-snapshot
Artificial Synapse of CuBiI4 Memristors
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00836openalex-snapshot
Logic Function and Random Number Generator Build Based on Perovskite Resistive Switching Memory and Performance Conversion via Flexible Bending
inferred← citeshttps://doi.org/10.1021/acsami.0c03106openalex-snapshot
Opportunity of the Lead-Free All-Inorganic Cs3Cu2I5 Perovskite Film for Memristor and Neuromorphic Computing Applications
inferred← citeshttps://doi.org/10.1021/acsami.0c07186openalex-snapshot
Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals
inferred← citeshttps://doi.org/10.1021/acsami.0c10123openalex-snapshot
Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application
inferred← citeshttps://doi.org/10.1021/acsami.0c15840openalex-snapshot
Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device
inferred← citeshttps://doi.org/10.1021/acsami.0c18038openalex-snapshot
Bifunctional Silver-Doped ZnO for Reliable and Stable Organic–Inorganic Hybrid Perovskite Memory
inferred← citeshttps://doi.org/10.1021/acsami.1c13210openalex-snapshot
Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem
inferred← citeshttps://doi.org/10.1021/acsami.2c09904openalex-snapshot
Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability
inferred← citeshttps://doi.org/10.1021/acsami.2c15332openalex-snapshot
Enhanced Resistive Switching Performance through Air-Stable Cu 2 AgSbI 6 Thin Films for Flexible and Multilevel Storage Application
inferred← citeshttps://doi.org/10.1021/acsami.3c01450openalex-snapshot
MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time
inferred← citeshttps://doi.org/10.1021/acsami.4c09673openalex-snapshot
All-Inorganic CsPbBr3 Perovskite Planar-Type Memristors as Optoelectronic Synapses
inferred← citeshttps://doi.org/10.1021/acsami.5c09862openalex-snapshot
A Comprehensive Review of Electrochemical Metallization and Valence Change Mechanisms in Filamentary Resistive Switching of Halide Perovskite-Based Memory Devices
inferred← citeshttps://doi.org/10.1021/acsami.5c10525openalex-snapshot
Additive-Engineered CsPbBr 3 -Based Perovskite Memristors for Neuromorphic Computing and Associative Learning Applications
inferred← citeshttps://doi.org/10.1021/acsami.5c22493openalex-snapshot
Alcohol-Dependent CuI Iodization Kinetics toward In Situ Repairable and Fault-Tolerant RRAM Switching
inferred← citeshttps://doi.org/10.1021/acsami.6c08360openalex-snapshot
PMMA-Engineered Halide Perovskite/Ag Interface for Optoelectronic Stable Memristive Synapse
inferred← citeshttps://doi.org/10.1021/acsami.8b07079openalex-snapshot
Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device
inferred← citeshttps://doi.org/10.1021/acsami.8b15769openalex-snapshot
Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
inferred← citeshttps://doi.org/10.1021/acsami.9b05038openalex-snapshot
Impact of Grain Sizes on Programmable Memory Characteristics in Two-Dimensional Organic–Inorganic Hybrid Perovskite Memory
inferred← citeshttps://doi.org/10.1021/acsami.9b09080openalex-snapshot
Air-Stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices
inferred← citeshttps://doi.org/10.1021/acsami.9b12931openalex-snapshot
Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains
inferred← citeshttps://doi.org/10.1021/acsami.9b15791openalex-snapshot
Current Oscillations and Intermittent Emission Near an Electrode Interface in a Hybrid Organic–Inorganic Perovskite Single Crystal
inferred← citeshttps://doi.org/10.1021/acsami.9b17680openalex-snapshot
Resistive Switching in Nonperovskite-Phase CsPbI3 Film-Based Memory Devices
inferred← citeshttps://doi.org/10.1021/acsami.9b22918openalex-snapshot
Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsanm.0c02457openalex-snapshot
Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers
inferred← citeshttps://doi.org/10.1021/acsanm.2c01750openalex-snapshot
Zinc Borosilicate Glass-Stabilized CsPbX3 (X = Cl, Br, I) Perovskite Quantum Dots for Photoluminescence Lighting and Display Applications
inferred← citeshttps://doi.org/10.1021/acsanm.2c03639openalex-snapshot
Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
inferred← citeshttps://doi.org/10.1021/acsapm.2c02034openalex-snapshot
Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites
inferred← citeshttps://doi.org/10.1021/acsenergylett.3c02767openalex-snapshot
Unraveling Dual Operational Mechanisms in an Air-Stable All Inorganic Perovskite for Nonvolatile Memory and Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsnano.2c05436openalex-snapshot
Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing
inferred← citeshttps://doi.org/10.1021/acsomega.8b01372openalex-snapshot
Structural, Optical, Magnetic, and Dielectric Properties in Hybrid Solid Solutions of ZnαNi1−α(en)3Ag2I4 (0 < α < 1) by Varying the Relative Zn/Ni Content
inferred← citeshttps://doi.org/10.1021/acsphotonics.0c01952openalex-snapshot
Ligand-Assisted Sulfide Surface Treatment of CsPbI3 Perovskite Quantum Dots to Increase Photoluminescence and Recovery
inferred← citeshttps://doi.org/10.1038/s41427-020-0202-2openalex-snapshot
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
inferred← citeshttps://doi.org/10.1038/s41467-021-23871-wopenalex-snapshot
Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory
inferred← citeshttps://doi.org/10.1039/c8cp03945copenalex-snapshot
Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites
inferred← citeshttps://doi.org/10.1039/c8nr00863aopenalex-snapshot
Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
inferred← citeshttps://doi.org/10.1039/c8nr08721kopenalex-snapshot
Flexible artificial nociceptor using a biopolymer-based forming-free memristor
inferred← citeshttps://doi.org/10.1039/c8nr09918aopenalex-snapshot
Perovskite-related (CH 3 NH 3 ) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing
inferred← citeshttps://doi.org/10.1039/c8tc05489dopenalex-snapshot
A bio-inspired electronic synapse using solution processable organic small molecule
inferred← citeshttps://doi.org/10.1039/c8tc06031bopenalex-snapshot
Halide perovskites for resistive random-access memories
inferred← citeshttps://doi.org/10.1039/c8tc06207bopenalex-snapshot
An excellent pH-controlled resistive switching memory device based on self-colored (C 7 H 7 O 4 N) n extracted from a lichen plant
inferred← citeshttps://doi.org/10.1039/c8tc06249hopenalex-snapshot
Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics
inferred← citeshttps://doi.org/10.1039/c9nr00438fopenalex-snapshot
Effect of interlayer spacing in layered perovskites on resistive switching memory
inferred← citeshttps://doi.org/10.1039/c9nr02885dopenalex-snapshot
The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties
inferred← citeshttps://doi.org/10.1039/c9ra04600copenalex-snapshot
Controllable synthesis of CsPbI 3 nanorods with tunable photoluminescence emission
inferred← citeshttps://doi.org/10.1039/c9tc02233copenalex-snapshot
Metal halide perovskites for resistive switching memory devices and artificial synapses
inferred← citeshttps://doi.org/10.1039/c9tc02693bopenalex-snapshot
Evidence for the dynamic relaxation behavior of oxygen vacancies in Aurivillius Bi 2 MoO 6 from dielectric spectroscopy during resistance switching
inferred← citeshttps://doi.org/10.1039/d0nr03242eopenalex-snapshot
Solution-processed inorganic δ-phase CsPbI 3 electronic synapses with short- and long-term plasticity in a crossbar array structure
inferred← citeshttps://doi.org/10.1039/d0nr08214gopenalex-snapshot
Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
inferred← citeshttps://doi.org/10.1039/d0nr09234gopenalex-snapshot
Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films
inferred← citeshttps://doi.org/10.1039/d0tc02579hopenalex-snapshot
Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite
inferred← citeshttps://doi.org/10.1039/d0tc03296dopenalex-snapshot
High-performance vertical field-effect transistors based on all-inorganic perovskite microplatelets
inferred← citeshttps://doi.org/10.1039/d1cs00886bopenalex-snapshot
Nanostructured perovskites for nonvolatile memory devices
inferred← citeshttps://doi.org/10.1039/d1ma00802aopenalex-snapshot
Solution-based low-temperature CsPbI 3 nanoparticle perovskite solar cells
inferred← citeshttps://doi.org/10.1039/d1nr03245copenalex-snapshot
A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
inferred← citeshttps://doi.org/10.1039/d1tc04164aopenalex-snapshot
High-performance perovskite memristor by integrating a tip-shape contact
inferred← citeshttps://doi.org/10.1039/d1tc06005hopenalex-snapshot
Multi-factor-controlled ReRAM devices and their applications
inferred← citeshttps://doi.org/10.1039/d2nr06403kopenalex-snapshot
Halide perovskite photoelectric artificial synapses: materials, devices, and applications
inferred← citeshttps://doi.org/10.1039/d2nr06773kopenalex-snapshot
Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude
inferred← citeshttps://doi.org/10.1039/d3dt00539aopenalex-snapshot
Rational design of a Ru( ii ) complex with a donor–acceptor–donor structure for organic resistive memory devices
inferred← citeshttps://doi.org/10.1039/d3ma00618bopenalex-snapshot
Resistive switching in benzylammonium-based Ruddlesden–Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing
inferred← citeshttps://doi.org/10.1039/d3tc00350gopenalex-snapshot
Rare earth halide double perovskites for high-performance resistive random access memory
inferred← citeshttps://doi.org/10.1039/d3tc02309eopenalex-snapshot
Perovskite material-based memristors for applications in information processing and artificial intelligence
inferred← citeshttps://doi.org/10.1039/d3tc03580hopenalex-snapshot
A low power flexible halide perovskite-based threshold switching memristor as an artificial nociceptor
inferred← citeshttps://doi.org/10.1039/d4ce00933aopenalex-snapshot
Ambient-stable and lead-free Cs 3 Bi 2 I 9− x Br x (0 ≤ x ≤ 9) perovskite films for memristor devices
inferred← citeshttps://doi.org/10.1039/d4nr01395fopenalex-snapshot
Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices
inferred← citeshttps://doi.org/10.1039/d5cs01222hopenalex-snapshot
From solar cells to memristors: halide perovskites as a platform for neuromorphic electronics
inferred← citeshttps://doi.org/10.1039/d5dt02579fopenalex-snapshot
Halide perovskite-based memory devices and neuromorphic computing
inferred← citeshttps://doi.org/10.1039/d5ma00337gopenalex-snapshot
Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
inferred← citeshttps://doi.org/10.1039/d5ma00609kopenalex-snapshot
Single crystal halide perovskites for resistive switching memory devices and artificial synapse
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