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Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple‐junction solar cells
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Outgoing claims: the papers this work cites, builds on, or argues with.
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Handbook of Photovoltaic Science and Engineering
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GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability
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Physics of Semiconductor Devices
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Modelling of the perimeter recombination effect in GaAs-based micro-solar cell
inferredcites →https://doi.org/10.1016/j.solmat.2013.08.009openalex-snapshot
3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells
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Orientation-dependent perimeter recombination in GaAs diodes
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Junction characteristics of Ga0.5In0.5P n+p diodes and solar cells
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Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications
inferredcites →https://doi.org/10.1109/16.81614openalex-snapshot
Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation
inferredcites →https://doi.org/10.1109/55.746openalex-snapshot
Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells
inferredcites →https://doi.org/10.1109/pvsc.2010.5616766openalex-snapshot
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Enhanced performance of small GaAs solar cells via edge and surface passivation with trioctylphosphine sulfide
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