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Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells

https://doi.org/10.1109/55.746
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/0379-6787(88)90040-3openalex-snapshot
Device processing and analysis of high efficiency GaAs cells
inferredcites →https://doi.org/10.1063/1.325265openalex-snapshot
The effect of surface recombination on current in AlxGa1−xAs heterojunctions
inferredcites →https://doi.org/10.1063/1.97681openalex-snapshot
Dominance of surface recombination current in planar, Be-implanted GaAs p-n junctions prepared by rapid thermal annealing
inferredcites →https://doi.org/10.1063/1.98415openalex-snapshot
Nearly ideal electronic properties of sulfide coated GaAs surfaces
inferredcites →https://doi.org/10.1063/1.98877openalex-snapshot
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
inferredcites →https://doi.org/10.1063/1.99524openalex-snapshot
Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4803086openalex-extracted
Sidewall Passivation of Alxga1−Xas Homojunctions with Wet Chemicals and Field-Effect Passivation by Ald Oxides and Nitrides
inferred← citeshttps://doi.org/10.1002/9781119605768.ch9openalex-snapshot
Indoor Photovoltaics Based on AlGaAs
inferred← citeshttps://doi.org/10.1002/aenm.201100666openalex-snapshot
GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability
inferred← citeshttps://doi.org/10.1002/pip.2285openalex-snapshot
Analysis of temperature coefficients for III–V multi‐junction concentrator cells
inferred← citeshttps://doi.org/10.1002/pip.2501openalex-snapshot
Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple‐junction solar cells
inferred← citeshttps://doi.org/10.1002/pip.3140openalex-snapshot
Current transport efficiency analysis of multijunction solar cells by luminescence imaging
inferred← citeshttps://doi.org/10.1007/978-94-011-3622-8_203openalex-snapshot
Analysis of the Diode Currents in Back Contacted Emitter GaAs Solar Cells
inferred← citeshttps://doi.org/10.1016/0379-6787(89)90045-8openalex-snapshot
Correlation of material properties and recombination losses in Al0.2Ga0.8As solar cells
inferred← citeshttps://doi.org/10.1016/j.microrel.2010.07.128openalex-snapshot
Degradation mechanism analysis in temperature stress tests on III–V ultra-high concentrator solar cells using a 3D distributed model
inferred← citeshttps://doi.org/10.1016/j.solmat.2019.109949openalex-snapshot
Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
inferred← citeshttps://doi.org/10.1016/j.solmat.2020.110791openalex-snapshot
Voltage losses due to the perimeter and dark area in micro-concentrator solar cells
inferred← citeshttps://doi.org/10.1016/j.surfin.2024.104876openalex-snapshot
Sidewall passivation of Al Ga1As homojunctions with wet chemicals and field-effect passivation by ALD oxides and nitrides
inferred← citeshttps://doi.org/10.1063/1.100811openalex-snapshot
Space-charge-limited current analysis of the leakage current and interface states of GaAs p/n diode solar cells
inferred← citeshttps://doi.org/10.1063/1.100929openalex-snapshot
Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces
inferred← citeshttps://doi.org/10.1063/1.103108openalex-snapshot
Orientation-dependent perimeter recombination in GaAs diodes
inferred← citeshttps://doi.org/10.1063/1.104163openalex-snapshot
As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors
inferred← citeshttps://doi.org/10.1063/1.110064openalex-snapshot
Surface recombination velocities on processed InGaP p-n junctions
inferred← citeshttps://doi.org/10.1063/1.353998openalex-snapshot
Surface recombination in GaAs PN junction diode
inferred← citeshttps://doi.org/10.1063/1.359221openalex-snapshot
Junction characteristics of Ga0.5In0.5P n+p diodes and solar cells
inferred← citeshttps://doi.org/10.1063/1.365491openalex-snapshot
Junction characteristics of electron-irradiated Ga0.5In0.5P n+-p diodes and solar cells
inferred← citeshttps://doi.org/10.1063/1.53447openalex-snapshot
Requirements for a 20%-efficient polycrystalline GaAs solar cell
inferred← citeshttps://doi.org/10.1088/1361-6463/aaf850openalex-snapshot
24.5% efficient GaAs p-on-n solar cells with 120 µ m h −1 MOVPE growth
inferred← citeshttps://doi.org/10.1109/16.299671openalex-snapshot
Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulation
inferred← citeshttps://doi.org/10.1109/16.46385openalex-snapshot
Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications
inferred← citeshttps://doi.org/10.1109/16.711373openalex-snapshot
Design and optimization of very high power density monochromatic GaAs photovoltaic cells
inferred← citeshttps://doi.org/10.1109/16.81614openalex-snapshot
Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation
inferred← citeshttps://doi.org/10.1109/16.902716openalex-snapshot
The influence of monolithic series connection on the efficiency of GaAs photovoltaic converters for monochromatic illumination
inferred← citeshttps://doi.org/10.1109/bipol.1988.51039openalex-snapshot
Heteroface bipolar transistor based on bandgap narrowing in p/sup +/-GaAs
inferred← citeshttps://doi.org/10.1109/iciprm.1994.328193openalex-snapshot
Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions
inferred← citeshttps://doi.org/10.1109/jphotov.2013.2241594openalex-snapshot
Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit
inferred← citeshttps://doi.org/10.1109/jphotov.2018.2814919openalex-snapshot
Extremely High-Speed GaAs Growth by MOVPE for Low-Cost PV Application
inferred← citeshttps://doi.org/10.1109/pvsc.1990.111599openalex-snapshot
Back contacted emitter GaAs solar cells
inferred← citeshttps://doi.org/10.1109/pvsc.1990.111663openalex-snapshot
Effects of perimeter recombination on GaAs-based solar cells
inferred← citeshttps://doi.org/10.1109/pvsc.2000.916083openalex-snapshot
Multijunction solar cell iso-junction dark current study
inferred← citeshttps://doi.org/10.1109/ted.2015.2434336openalex-snapshot
AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes
inferred← citeshttps://doi.org/10.1109/ted.2016.2569079openalex-snapshot
Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions
inferred← citeshttps://doi.org/10.1117/12.2613441openalex-snapshot
Sub-millimeter-scale multijunction solar cells for concentrator photovoltaics (CPV)
inferred← citeshttps://doi.org/10.1134/1.1187580openalex-snapshot
Chalcogenide passivation of III–V semiconductor surfaces
inferred← citeshttps://doi.org/10.1134/1.1262298openalex-snapshot
Photoluminescence of II–IV–V2 and I–III–VI2 crystals passivated in a sulfide solution
inferred← citeshttps://doi.org/10.1149/2.0241805jssopenalex-snapshot
2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers
inferred← citeshttps://doi.org/10.1364/peo.1989.osda210openalex-snapshot
Photocurrent-Voltage Characteristics of Ultrafast Photoconductive Switches
inferred← citeshttps://doi.org/10.20868/upm.thesis.14620openalex-snapshot
Advances in the modeling, characterization and reliability of concentrator multijunction solar cells
inferred← citeshttps://doi.org/10.20868/upm.thesis.274openalex-snapshot
Modelado y fabricación de células fotovoltaicas de GaSb : Aplicación a sistemas termofotovoltaicos
inferred← citeshttps://doi.org/10.20868/upm.thesis.3280openalex-snapshot
Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
inferred← citeshttps://doi.org/10.20868/upm.thesis.57487openalex-snapshot
Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells
inferred← citeshttps://doi.org/10.2172/10178454openalex-snapshot
Item Unavailable
inferred← citeshttps://doi.org/10.2172/1114049openalex-snapshot
Annual Report: Photovoltaic Subcontract Program FY 1990
inferred← citeshttps://doi.org/10.2172/5824668openalex-snapshot
Photovoltaic Subcontract Program, FY 1990
inferred← citeshttps://doi.org/10.2172/6686930openalex-snapshot
Gallium arsenide-based ternary compounds and multi-band-gap solar cell research
inferred← citeshttps://doi.org/10.35848/1347-4065/ae6dd0openalex-snapshot
Polarity dependence of III–V multijunction solar cells fabricated via wafer bonding technique
inferred← citeshttps://doi.org/10.70675/188901e5z372dz479bz9b92z66d4e911cb07openalex-snapshot
Avancées sur les cellules solaires ultrafines en GaAs et en CdTe
inferred← citeshttps://doi.org/10.7567/jjap.55.04es09openalex-snapshot
InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting
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